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Электронный компонент: 2SD2702

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2SD2702
Transistors
Rev.A
1/2
General purpose amplification (12V, 1.5A)
2SD2702

Application
Low frequency amplifier

Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
200mV
at I
C
=
500mA / I
B
=
25mA
<=




External dimensions (Unit : mm)
ROHM : TUMT3
Abbreviated symbol
:
ES
(1) Base
(2) Emitter
(3) Collector
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65
0.65
(3)
(2)
(1)
1.7
0.2
0.2
2.1
0~0.1
0.85Max.

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Unit
1
2
V
CBO
V
Collector-base voltage
V
CEO
V
Collector-emitter voltage
V
EBO
V
Emitter-base voltage
I
C
A
I
CP
A
Collector current
P
C
W
Power dissipation
Tj
C
Junction temperature
Tstg
Limits
15
12
6
1.5
3
0.4
0.8
150
-
55 to
+
150
C
Range of storage temperature
1
Single pulse, P
W
=
1ms
2
Mounted on a 25
25
0.8mm Ceramic substrate
t

Packaging specifications
2SD2702
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping




Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ. Max.
Unit
Conditions
15
-
-
V
I
C
=
10
A
Collector-base breakdown voltage
BV
CBO
12
-
-
V
I
C
=
1mA
Collector-emitter breakdown voltage
BV
CEO
6
-
-
V
I
E
=
10
A
Emitter-base breakdown voltage
BV
EBO
-
-
100
nA
V
CB
=
15V
Collector cutoff current
I
CBO
Emitter cutoff current
-
-
100
nA
V
EB
=
6V
I
EBO
-
85
200
mV
I
C
/I
B
=
500mA/25mA
Collector-emitter saturation voltage
V
CE(sat)
270
-
680
-
V
CE
/I
C
=
2V/200mA
DC current gain
h
FE
-
400
-
MHz V
CE
=
2V, I
E
=-
200mA, f
=
100MHz
Transition frequency
f
T
-
12
-
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector output capacitance
Cob

Pulsed
2SD2702
Transistors
Rev.A
2/2
Electrical characteristic curves
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
10
DC CURRENT GAIN : h
FE
100
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
V
CE
=
2V
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.1
0.01
10
1
Ta
=
25
C
Ta
=
25
C
Ta
=-
40
C
Ta
=-
40
C
Ta
=
100
C
Ta
=
100
C
V
BE(sat)
V
CE(sat)
I
C
/I
B
=
20
Pulsed
I
C
/I
B
=
20/1
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta
=
25
C
V
CE
=
2V
I
C
/I
B
=
50/1
I
C
/I
B
=
20/1
I
C
/I
B
=
10/1

0
0.001
0.01
0.1
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.4 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(A)
1.5
1.0
0.5
V
CE
=
2V
Pulsed
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
-
0.001
-
0.01
-
0.1
-
1
-
10
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : f
T
(MHz)
100
1000
V
CE
=
2V
Ta
=
25
C
Pulsed
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
10
100
1000
Ta
=
25
C
V
CE
=
2V
f
=
100MHz
tstg
tdon
tr
tf

0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
100
Cib
Cob
I
E
=
0A
f
=
1MHz
Ta
=
25
C
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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