2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure
Silicon N-channel
!External dimensions
(Units : mm)
ROHM : MPT3
E I A J : SC-62
(1) Gate
(2) Drain
(3) Source
-
0.1
+
0.2
-
0.05
+
0.1
+
0.2
-
0.1
(3)
(2)
(1)
1.0
0.3
0.5
0.1
2.5
3.0
0.2
1.5
0.1
1.5
0.1
0.4
0.1
0.5
0.1
0.4
0.1
0.4
1.5
0.1
4.5
1.6
0.1
Abbreviated symbol : KE
+
0.5
-
0.3
4.0
MOS FET transistor
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25
C)
Channel temperature
Storage temperature
V
DSS
V
GSS
I
DR
P
D
Tch
60
V
V
A
A
W
C
20
2
I
D
I
DRP
1
A
I
DP
1
Continuous
Pulsed
Continuous
Pulsed
A
8
2
8
150
Tstg
C
-
55
+
150
Symbol
Limits
Unit
1 Pw
10
s, Duty cycle
1%
2 When mounted on a 40
40
0.7 mm alumina board.
Reverse drain
current
2
2
0.5
!Internal equivalent circuit
Drain
Source
Gate
Gate
Protection
Diode
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics
(Ta = 25
C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test Conditions
V
GS
=
0V
f
=
1MHz
V
DS
=
10V
V
GS
=
4V
I
D
=
1A, V
DD
30V
R
L
=
30
R
G
=
10
A
pF
S
Unit
V
A
V
pF
pF
ns
ns
ns
ns
I
D
=
1A, V
GS
=
4V
-
-
60
-
0.8
-
1.5
Min.
-
-
-
-
-
-
-
160
-
-
-
-
-
0.25
-
Typ.
85
25
20
50
120
70
0.35
-
10
10
1.5
0.32
-
Max.
-
-
-
-
-
-
0.45
I
D
=
1A, V
GS
=
2.5V
I
D
=
1A, V
DS
=
10V
I
D
=
1mA, V
GS
=
0V
V
GS
=
20V, V
DS
=
0V
V
DS
=
60V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
GSS
I
DSS
Y
fs
C
iss
Symbol
C
oss
C
rss
t
r
t
f
V
(BR)DSS
V
GS(th)
R
DS(on)
R
DS(on)
t
d(on)
t
d(off)
Pw
300
s, Duty cycle
1%
Static drain-source on-state
resistance
2SK3065
Transistors
!Packaging specifications
T100
1000
2SK3065
Type
Package
Code
Basic ordering unit
(pieces)
Taping
!Electrical characteristic curves
0
25
50
75
100
125
150
175
0
1
2
3
TOTAL POWER DISSIPATION : P
D
(W)
AMBIENT TEMPERATURE : Ta(
C)
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
Fig.1 Total Power Dissipation vs.
Case Temperature
100
s
1ms
Pw
=
10ms
DC OPERATION
0.1
1
10
100
0.001
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.01
Operating in this
area is limited by
R
DS(on)
Ta
=
25
C
Single Pulsed
Fig.2 Maximum Safe Operating Area
0
5
10
0
1
2
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
V
GS
=1.5V
2V
4V
3.5V
3V
2.5V
Ta=25
C
Pulsed
Fig.3 Typical Output Characteristics
0
5
4
0.1
1
10
DRAIN CURRENT : I
D
(A)
GATE THRESHOLD VOLTAGE : V
GS
(th)(V)
3
2
1
Ta=
-
25
C
25
C
75
C
125
C
V
DS
=10V
Pulsed
Fig.4 Typical Transfer Characteristics
-
50
150
100
0
1
4
GATE THRESHOLD VOLTAGE : V
GS
(th)(
V)
CHANNEL TEMPERATURE : Tch(
C)
50
25
0
2
3
-
25
75
125
10mA
I
D
=1mA
V
DS
=10V
Fig.5 Gate Threshold Voltage vs.
Channel Temperature
0.01
10
0.1
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)(
)
DRAIN CURRENT : I
D
(A)
0.1
1
1
Ta=125
C
75
C
25
C
-
25
C
V
GS
=4V
Pulsed
Fig.6 Static Drain-Source On-
State Resistance vs.
Drain Current(
)
2SK3065
Transistors
0.01
10
0.1
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)(
)
DRAIN CURRENT : I
D
(A)
0.1
1
1
Ta=125
C
75
C
25
C
-
25
C
V
GS
=2.5V
Pulsed
Fig.7 Static Drain-Source On-
State Resistance vs.
Drain Current(
)
0
20
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)(
)
GATE-SOURCE VOLTAGE : V
GS
(V)
5
Ta=25
C
Pulsed
2A
I
D
=1A
10
15
0.25
0.5
0.75
1
Fig.8 Static Drain-Source On-
State Resistance vs.
Gate-Source Voltage
-
50
150
100
0
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)(
)
CHANNEL TEMPERATURE : Tch(
C)
50
25
0
0.5
-
25
75
125
2A
I
D
=1A
V
GS
=4V
Pulsed
Fig.9 Static Drain-Source On-
State Resistance vs.
Channel Temperature
0.01
10
0.1
10
FORWARD TRANSFER ADMITTANCE : | Yfs |(S)
DRAIN CURRENT : I
D
(A)
0.1
1
1
V
DS
=10V
Pulsed
Ta=
-
25
C
25
C
75
C
125
C
Fig.10
Forward Trasfer Admitance vs.
Drain Current
0
1.6
0.01
10
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.4
1
1.2
V
GS
=4V
Pulsed
0.8
Ta=125
C
75
C
25
C
-
25
C
0.1
Fig.11 Reverse Drain Current vs.
Source-Drain Voltage(
)
0
1.6
0.01
10
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.4
1
1.2
Ta=25
C
Pulsed
0.8
0.1
V
GS
=0V
4V
Fig.12 Reverse Drain Current vs.
Source-Drain Voltage(
)
0
100
1
1000
CAPACITANCE : C(pF)
DRAIN-SOURCE VOLTAGE : V
SD
(V)
100
10
10
V
GS
=0V
f=1MH
Z
Ta=25
C
C
oss
C
rss
C
iss
Fig.13 Typical Capacitance vs.
Drain-Source Voltage
0.1
10
10
1000
SWITCHING TIME : t(ns)
DRAIN CURRENT : I
D
(A)
100
1
V
DD
30
V
V
GS
=4V
R
G
=10
Ta=25
C
Pulsed
t
f
t
d(on)
t
r
t
d(off)
Fig.14 Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
0.1
10
10
1000
REVERSE RECOVERY TIME : trr(ns)
REVERSE DRAIN CURRENT : I
DR
(A)
100
1
di/dt=50A/
s
V
GS
=0V
Ta=25
C
Pulsed
Fig.15 Reverse Recovery Time vs.
Reverse Drain Current
2SK3065
Transistors
100
100m
0.001
10
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r(t)
PULSE WIDTH : PW(s)
1
10m
Ta=25
C
th (ch-c)
(t)
= r
(t)
th (ch-c)
th (ch-c)
=62.5
C/W
D= PW
T
PW
T
10
1
100
1m
0.01
0.1
D=1
0.5
0.2
0.1
0.05
0.02
0.01
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
Single pulse
Fig.16 Normarized Transient Thermal Resistance vs. Pulse Width
!Switching characteristics measurement circuit
Fig.17 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
50%
10%
90%
10%
50%
Pulse width
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.18 Switching Time Waveforms
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