DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA
Transistors
Digital transistors (built in resistor)
DTC115TH / DTC115TUA / DT115TKA / DTC115TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!
!
!
!Equivalent circuit
C
B
E
R
1
E : Emitter
C : Collector
B : Base
!
!
!
!External dimensions
(Units : mm)
ROHM : EMT3H
EIAJ : SC-89
ROHM : UMT3
DTC115TH
DTC115TUA
DTC115TKA
DTC115TSA
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(3) Collector
(2) Base
0.12
0to0.1
0.27
(3)
0.7
1.0
0.5
0.5
1.6
1.6
0.85
(1)
(2)
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
1.25
2.1
0.3
0.15
0to0.1
0.1to0.4
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
(2) Base
(3) Collector
(1) Emitter
Each lead has same dimensions
0.8
0.15
0to0.1
0.3to0.6
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
0.95
0.95
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(2) Collector
( 15Min.
)
5
3
3Min.
Taping specifications
0.45
0.5
4
2
DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA
Transistors
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
300
DTC115TUA / DTC115TKA
DTC115TH
DTC115TSA
150
-
55~
+
150
Unit
V
V
V
mA
mW
C
C
Collector power
dissipation
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
!
!
!
!Packaging, marking, and packaging specifications
Part No.
DTC115TH
EMT3H
09
T2L
8000
DTC115TUA
UMT3
09
T106
3000
DTC115TKA
SMT3
09
T146
3000
DTC115TSA
SPT
-
TP
5000
Package
Marking
Packaging code
Basic ordering unit (pieces)
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
50
50
5
-
-
-
100
-
70
-
-
-
-
-
-
250
250
100
-
-
-
0.5
0.5
0.3
600
-
130
V
V
V
A
A
V
-
MHz
k
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=50V
V
EB
=4V
I
C
/I
B
=1mA/0.1mA
I
C
=1mA, V
CE
=5V
V
CE
=10V, I
E
=
-
5mA, f
=100MHz
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Input resistance
Transition frequency of the device.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
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