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Электронный компонент: EM6K1T2R

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EM6K1
Transistor
Small switching (30V, 0.1A)
EM6K1
!
!
!
!
Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOSFET elements are independent, eliminating
interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
!
Applications
!
!
!
!
External dimensions (Units : mm)
Each lead has same dimensions
Abbreviated symbol : K1
EMT6
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Interfacing, switching (30V, 100mA)
!
!
!
!
Structure
Silicon N-channel
MOSFET
!
!
!
!
Packaging specifications
Taping
EM6K1
Type
T2R
8000
Package
Basic ordering unit
(pieces)
Code
!
!
!
!
Equivalent circuit
(1)
Gate
Protection
Diode
Tr1
Tr2
Gate
Protection
Diode
A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
(2)
(3)
(4)
(5)
(6)
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
V
V
mA
mA
mW/TOTAL
120mW/1ELEMENT
C
mA
mA
C
V
DSS
V
GSS
I
DR
P
D
Tch
I
D
I
DRP
I
DP
Tstg
Symbol
30
20
100
400
100
400
150
150
-
55~
+
150
Limits
Unit
1 Pw
10
s, Duty cycle
1%
2 With each pin mounted on the recommended lands.
Drain
-
source voltage
Gate
-
source voltage
Drain current
Reverse drain current
Total power dissipation (Tc=25
C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1
1
2
EM6K1
Transistor
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
C
iss
Y
fs
C
oss
C
rss
Min.
-
30
-
0.8
-
-
20
-
-
-
-
-
-
5
13
-
9
4
1
-
1.0
1.5
8
-
7
13
-
-
-
-
A
V
GS
=
20V, V
DS
=0V
I
D
=10
A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=10mA
V
DS
=3V, I
D
=100
A
I
D
=10mA, V
GS
=4V
I
D
=1mA, V
GS
=2.5V
V
DS
=5V
V
GS
=0V
f
=1MHz
V
A
V

pF
mS
pF
pF
t
d(on)
-
15
-
I
D
=10mA, V
DD
5V
ns
t
r
-
35
-
V
GS
=5V
ns
t
d(off)
-
80
-
R
L
=500
ns
t
r
-
80
-
R
GS
=10
ns
Typ.
Max.
Unit
Conditions
Gate
-
source leakage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn
-
on delay time
Turn
-
off delay time
Rise time
Fall time
Drain
-
source breakdown voltage
Static drain
-
source on
-
starte
resistance
Zero gate voltage drain current
!
!
!
!
Electrical characteristic curves
0
1
2
3
4
5
0
0.05
0.1
0.15
DRAIN CURRENT : I
D
(
A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=1.5V
4V
2V
Fig.1 Typical Output Characteristics
0
4
0.1m
100m
DRAIN CURRENT : I
D
(
A)
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
V
DS
=3V
Pulsed
Ta=125
C
75
C
25
C
-
25
C
Fig.2 Typical Transfer Characteristics
-
50
0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : V
GS
(th) (
V)
CHANNEL TEMPERATURE : Tch
(
C)
0.5
-
25
25
50
75
100
125
150
V
DS
=3V
I
D
=0.1mA
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) (
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
V
GS
=4V
Pulsed
Ta=125
C
75
C
25
C
-
25
C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
)
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) (
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
V
GS
=2.5V
Pulsed
Ta=125
C
75
C
25
C
-
25
C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (
)
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=0.1A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) (
)
Ta=25
C
Pulsed
I
D
=0.05A
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
EM6K1
Transistor
-
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
C)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on
) (
)
-
25
50
75
100 125
2
1
4
5
7
8
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=50mA
Fig.7 Static Drain-Source On-State
Resistance vs.
Channel Temperature
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE :
Yfs
(
S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
V
DS
=3V
Pulsed
Ta=
-
25
C
75
C
25
C
125
C
Fig.8 Forward Transfer Admittance
vs. Drain Current
200m
REVERCE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=0V
Pulsed
Ta=125
C
75
C
25
C
-
25
C
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage (
)
200m
REVERCE DRAIN CURRENT : I
DR
(
A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25
C
Pulsed
V
GS
=4V
0V
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage (
)
0.1
1
2
50
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2
0.5
1
2
5
10
20
50
5
10
20
C
iss
C
oss
C
rss
Ta
=25
C
f=1MH
Z
V
GS
=0V
Pulsed
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
0.1
10
20
500
SWITHING TIME : t (ns)
DRAIN CURRENT : I
D
(mA)
5
0.2
0.5
1
2
5
10
20
50
50
100
200
1000
2
100
Ta
=25
C
V
DD
=5V
V
GS
=5V
R
G
=10
t
d(off)
t
r
t
d(on)
t
f
Fig.12 Switching Characteristics
!
!
!
!
Switching characteristics measurement circuits
Fig.13 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
50%
10%
90%
10%
50%
Pulse Width
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Time Waveforms
Appendix
Appendix1-Rev1.0


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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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