EMH11 / UMH11N / IMH11A
Transistors
General purpose (dual digital transistors)
EMH11 / UMH11N / IMH11A
Features
1) Two DTC114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
1
and DTr
2
.
Equivalent circuit
R
1
=10k
R
2
=10k
R
1
=10k
R
2
=10k
DTr
2
DTr
1
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
2
R
2
R
1
EMH11 / UMH11N
IMH11A
Packaging specifications
Package
Taping
Code
UMH11N
EMH11
Type
IMH11A
TN
3000
T2R
8000
-
-
-
-
-
-
T110
3000
Basic ordering
unit (pieces)
External dimensions (Units : mm)
Abbreviated symbol : H11
ROHM : EMT6
ROHM : SMT6
EIAJ : SC-74
EMH11
IMH11A
ROHM : UMT6
EIAJ : SC-88
UMH11N
Abbreviated symbol : H11
Abbreviated symbol : H11
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
EMH11 / UMH11N / IMH11A
Transistors
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
V
IN
-
10
40
V
I
O
50
mA
I
C (Max.)
100
150
mA
Tstg
-
55~
+
150
C
C
Pd
EMH11,UMH11N
150 (TOTAL)
mW
IMH11A
300 (TOTAL)
1
2
Tj
Supply voltage
Input voltage
Output current
Collector current
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Junction temperature
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
I
V
I (off)
V
I (on)
V
O (on)
I
O (off)
R
1
G
I
R
2
/R
1
Min.
-
3
-
-
-
7
30
0.8
-
-
-
-
10
-
1
0.5
-
0.3
0.1
0.88
0.5
13
-
1.2
V
V
CC
=5V, I
O
=100
A
V
O
=0.3V, I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
-
V
O
=5V, I
O
=5mA
V
mA
A
k
-
-
-
Typ.
Max.
Unit
Conditions
f
T
-
250
-
V
CE
=10mA, I
E
=
-
5mA, f=100MHz
MHz
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
Transition frequency of the device
Electrical characteristic curves
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
100
200
500
1m
2m
5m 10m
20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=
-
40
C
25
C
100
C
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
0
3
10m
1
2m
5m
1m
200
500
100
20
50
10
2
5
0.5
1
1.5
2
2.5
V
CC
=5V
Ta=100
C
25
C
-
40
C
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
100
200
500
1m
2m
5m 10m
20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
V
O
=5V
Fig.3 DC current gain vs. output
current
Ta=100
C
25
C
-
40
C
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