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Электронный компонент: EML20

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EML20
Transistors
1/3
General purpose transistor
(isolated transistor and diode)
EML20


DTC123J A and RB521S-30 are housed independently in a EMT6 package.

Applications
DC / DC converter
Motor driver

Features
1) Tr : NPN digital transistor
Di : Low V
F
2) Mounting possible with EMT3 automatic mounting
machines.

Structure
NPN Silicon epitaxial planar digital transistor
Schottky barrier diode


The following characteristics apply to both Di1 and DTr2.

External dimensions (Unit : mm)
Abbreviated symbol : L20
Each lead has same dimensions
ROHM : EMT6
EMT6
0.22
1.2
1.6
(1) (2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
1pin mark

Equivalent circuit
DTr2
Di1
R1
R2
(4)
(5)
(6)
(3)
(2)
(1)
R
1
=2.2k
, R
2
=47k

Packaging specifications
Type
EML20
EMT6
L20
T2R
8000
Package
Marking
Code
Basic ordering unit (pieces)



EML20
Transistors
2/3
Absolute maximum ratings (Ta=25
C)
Di1
Parameter
Symbol
I
O
I
FSM
V
R
Tj
Limits
200
1
30
125
Unit
mA
A
V
C
Average revtified forward current
Forward current surge peak (60Hz, 1
)
Reverse voltage (DC)
Junction temperature

DTr2
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Each terminal mounted on a recommended.
Parameter
Symbol
Limits
Unit
V
CC
50
V
12
V
mA
V
IN
I
O
-
5
mA
I
C (MAX.)
100
Tj
150
C
P
d
100
120
mW


Di1 / DTr2
Power dissipation
Storage temperature
Each terminal mounted on a recommended.
Parameter
Symbol
Limits
Unit
P
d
150
mW
-
55 to
+
125
C
Tstg

Electrical characteristics (Ta=25
C)
Di1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
F
-
0.40
0.50
V
I
F
=
200mA
Forward voltage
Reverse current
I
R
-
4.0
30
A
V
R
=
10V

DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Resistance ratio
R
2
/R
1
17
21
26
-
-
-
Vl
(off)
-
-
0.5
V
V
CC
=
5V / Io
=
100uA
Output voltage
Vo
(on)
-
100
300
mV
I
O
=
5mA, I
I
=
0.25mA
Input voltage
II
-
-
3.6
mA
V
I
=
5V
Input current
I
O(off)
-
-
500
V
CC
=
50V / V
I
=
0V
Output current
G
I
80
-
-
V
O
=
5V / Io
=
10mA
DC current gain
f
T
-
-
MHz
V
CE
=
10V / I
E
= -
5mA, f
=
100MHz
Transition frequency
R
1
1.54
2.2
2.86
k
Input resistance
250
nA
-
VI
(on)
1.1
-
-
V
V
O
=
0.3V / Io
=
5mA
Characteristics of built-in transistor.





EML20
Transistors
3/3
Electrical characteristic curves
Di1
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
CA
PACITAN
C
E B
E
TWEE
N
TERMINALS:Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
10
100
0
5
10
15
20
f=1MHz
Ta=125
Ta=75
Ta=25
Ta=-25
R
E
VE
RS
E

C
U
RRE
NT:
I
R(u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS










FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
AR
D

C
U
RR
EN
T
:
I
F
(
m
A
)
0.001
1



DTr2
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
100
200
500
1m
2m
5m 10m 20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=
0.3V
Ta
=-
40
C
25
C
100
C
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
0
3.0
10m
1
2m
5m
1m
200
500
100
20
50
10
2
5
0.5
1.0
1.5
2.0
2.5
V
CC
=
5V
Ta
=
100
C
25
C
-
40
C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
1k
500
200
100
50
20
10
5
2
1
100
200
500
1m
2m
5m 10m 20m
50m 100m
V
O
=
5V
Ta
=
100
C
25
C
-
40
C
Fig.3 DC current gain vs. output
current

OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=
20
Ta
=
100
C
25
C
-
40
C
Fig.4 Output voltage vs. output
current
0.01
0.1
1
10
100
000
0
100
200
300
400
500
Ta=125
Ta=75
Ta=25
Ta=-25
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
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