EMZ7 / UMZ7N
Transistors
General purpose transistor
(dual transistors)
EMZ7 / UMZ7N
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!
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Features
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low V
CE(sat)
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!
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Structure
NPN / PNP epitaxial planar silicon transistor
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Equivalent Circuit
Tr
2
Tr
1
(3)
EMZ7 / UMZ7N
(2)
(1)
(4)
(5)
(6)
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!
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!
External dimensions (Units : mm)
Abbreviated symbol
: Z7
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
UMZ7N
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol
: Z7
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
EMZ7
ROHM : EMT6
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!
!
!
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
Limits
Unit
Tr
1
Tr
2
V
CBO
-
15
15
V
V
CEO
-
12
12
V
V
EBO
-
6
6
V
I
C
-
500
500
mA
Tj
150
C
Tstg
-
55
+
150
C
P
C
150(TOTAL)
mW
1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
1 120mW per element must not be exceeded.
EMZ7 / UMZ7N
Transistors
!
!
!
!
Electrical characteristics (Ta = 25
C)
Tr
1
(NPN)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
15
12
6
-
-
270
-
-
-
-
-
-
-
-
-
320
7.5
-
-
-
0.1
0.1
90
680
250
-
-
V
I
C
=
10
A
I
C
=
1mA
I
E
=
10
A
V
CB
=
15V
V
EB
=
6V
V
CE
/I
C
=
2V/10mA
V
CE
=
2V, I
C
=
-
10mA, f
=
100MHz
I
C
/I
B
=
200mA/10mA
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
mV
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Tr
2
(PNP)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
15
-
12
-
6
-
-
270
-
-
-
I
C
=
-
10
A
I
C
=
-
1mA
I
E
=
-
10
A
V
CB
=
-
15V
V
EB
=
-
6V
V
CE
/I
C
=
-
2V/
-
10mA
V
CE
=
-
2V, I
C
=
10mA, f
=
100MHz
I
C
/I
B
=
-
200mA/
-
10mA
V
CB
=
-
10V, I
E
=
0A, f
=
1MHz
-
-
-
-
-
-
260
-
100
6.5
Typ.
-
-
-
-
0.1
-
0.1
680
-
250
-
-
Max.
V
V
V
A
A
-
mV
MHz
pF
Unit
Conditions
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
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!
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!
Packaging specifications
UMZ7N
EMZ7
TR
3000
-
T2R
8000
-
Taping
Part No.
Packaging type
Code
Basic ordering unit (pieces)
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!
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Electrical characteristic curves
Tr
1
(NPN)
0
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
100
0.5
1.0
1.5
V
CE
=
2V
1000
Ta =
1
25
C
25
C
-40
C
2
5
20
50
200
500
1
2
5
10 20
50 100 200 500
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
20
50
100
200
500
1000
Ta
=
125
C
5
2
1
V
CE
=2V
25
C
-
40
C
1
2
5
10
20
50
100
200
I
C
/I
B
=20
1
2
5
10 20
50 100 200 5001000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Ta
=
125
C
500
1000
25
C
-
40
C
Fig.3 Collector-emitter saturation voltage
vs. collector current (
)
EMZ7 / UMZ7N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
(
V)
1
2
5
10
20
50
100
200
Ta
=
25
C
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=
50
500
1000
20
10
Fig.4 Collector-emitter saturation voltage
vs. collector current (
)
10
20
50
100
200
500
1000
2000
I
C
/I
B
=
20
1
2
5
10 20
50 100 200 5001000
BASE SATURATION VOLTAGE : V
BE
(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Ta
=-
40
C
5000
10000
25
C
125
C
Fig.5 Base-emitter saturation voltage
vs. collector current
2
1
5
10 20
50 100 200 5001000
1
2
5
10
20
50
100
200
500
1000
Ta
=
25C
V
CE
=
2V
f
T (
MH
Z)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Pulsed
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
0.2
0.1
0.5 1
2
5
10 20
50 100
1
2
5
10
20
50
100
200
500
1000
Ta
=
25
C
I
E
=
0A
f
=
1MHz
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cib
Cob
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Tr
2
(PNP)
0
1
2
5
20
50
100
200
500
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.8 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
1.5
1.0
0.5
V
CE
=
2V
Ta=125
C
Ta=25
C
Ta= -40
C
1
2
5
10
20
50 100 200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.9 DC current gain vs.
collector current
1
DC CURRENT GAIN : h
FE
500
2
5
10
200
500
1000
20
50
100
Ta=25
C
Ta=
-
40
C
Ta=125
C
V
CE
=
2V
1
2
5
10
20
50 100 200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.10 Collector-emitter saturation voltage
vs. collector current (
)
1
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
(V)
500
2
5
10
200
500
1000
20
50
100
Ta=25
C
Ta=
-
40
C
Ta=125
C
I
C
/I
B
=20
EMZ7 / UMZ7N
Transistors
1
2
5
10
20
50 100 200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.11 Collector-emitter saturation voltage
vs. collector current
1
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
(mV)
500
2
5
10
200
500
1000
20
50
100
Ta
=
25
C
I
C
/ I
B
=
50
I
C
/ I
B
=
20
I
C
/ I
B
=
10
1
2
5
10
20
50 100 200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.12 Base-emitter saturation voltage
vs. collector current
10
BASER SATURATION VOLTAGE : V
BE
(sat)
(mV)
500
20
50
100
2000
5000
10000
200
500
1000
Ta
=
25
C
Ta
= -
40
C
Ta
=
125
C
I
C
/I
B
=
20
1
2
5
10
20
50 100 200
1000
EMITTER CURRENT : I
C
(mA)
Fig.13 Gain bandwidth product vs.
emitter current
1
TRANSITION FREQUENCY : f
T
(MHz)
500
2
5
10
200
500
1000
20
50
100
V
CE
=
2V
Ta
=
25
C
0.2
0.5
1
2
5
10 20
50 100
0.1
1
2
5
10
20
50
100
200
500
1000
Ta=25
C
f=1MHz
I
E
=
0A
EMITTER INPUT CAPACITANCE : Cib(F)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.14 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
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