ChipFind - документация

Электронный компонент: FMW7

Скачать:  PDF   ZIP

Document Outline

EMX5 / UMX5N / IMX5
Transistors
High transition frequency (dual transistors)
EMX5 / UMX5N / IMX5
!
!
!
!
Features
1) Two 2SC3838K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=3.2GHz)
3) Low output capacitance. (Cob=0.9pF)
!
!
!
!
Equivalent circuits
EMX5 / UMX5N
(3)
(2)
(1)
(4)
(5)
(6)
IMX5
(4)
(5)
(6)
(3)
(2)
(1)
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
20
11
3
50
300(TOTAL)
150(TOTAL)
EMX5 / UMX5N
IMX5
150
-
55
~
+
150
Unit
V
V
V
mA
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
!
!
!
Package, marking, and packaging specifications
Type
EMX5
EMT5
X5
T2R
8000
IMX5
SMT6
X5
T108
3000
UMX5N
UMT6
X5
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
!
!
!
!
External dimensions (Units : mm)
UMX5N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
IMX5
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
ROHM : EMT6
EMX6
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
h
FE1 /
h
FE2
f
T
20
11
3
-
-
27
-
-
0.5
-
-
-
-
-
-
-
1
-
-
-
0.5
0.5
270
0.5
1.55
2
V
V
V
A
A
-
-
V
GHz
Cob
1.4
3.2
0.9
-
pF
I
C
=
10
A
I
C
=
1mA
I
E
=
10
A
V
CB
=
10V
V
EB
=
2V
V
CE
/I
C
=
10V/5mA
V
CE
/I
C
=
10V/10mA, f
=
200MHz
V
CB
/f
=
10V/1MHz, I
E
=
0A
I
C
/I
B
=
10mA/5mA
V
CE
/I
C
=
10V/5mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
h
FE
pairing