FMY5
Transistor
Rev.B
1/4
General purpose(dual transistors)
FMY5
Features
1) Both the 2SA1514K and 2SC3906K chips in an SMT
package.
2) PNP and NPN chips are connecter in a common
emitter.
Circuit diagram
(2)
(3)
(4)
(5)
Tr
1
Tr
2
(1)
External dimensions (Unit : mm)
Each lead has same dimensions
SMT5
1.1
0.8
0.3Min.
0.15
1.6
2.8
2.9
0.95
1.9
(4)
(5)
(1)
0.3
(3)
0.95
(2)
Absolute maximum ratings (Ta=25
C)
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
120
120
5
50
300(TOTAL)
150
-
55 to
+
150
Unit
V
V
V
mA
mW
C
C
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
Symbol
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Package, marking, and packaging specifications
Part No.
FMY5
SMT5
Y5
T148
3000
Package
Marking
Code
Basic ordering unit (pieces)
FMY5
Transistor
Rev.B
2/4
Electrical characteristics (Ta=25
C)
Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted.
Transition frequency of the device.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
120
120
5
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.5
0.5
V
V
V
A
A
V
I
C
= 50/
-
50
A
I
C
= 1/
-
1mA
I
E
= 50/
-
50
A
V
CB
= 100/
-
100V
V
EB
= 4/
-
4V
I
C
= 10/
-
10mA, I
B
= 1/
-
1mA
h
FE
180
-
820
-
V
CE
= 6/
-
6V, I
C
= 2/
-
2mA
f
T
Cob
-
-
140
3/4
-
-
MHz
pF
V
CE
= 12/
-
12V, I
E
=
-
2/2mA, f
= 100MHz
V
CB
= 12/
-
12V, I
E
= 0A, f
= 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics curves
Tr1
0
-
20
-
16
-
12
-
8
-
4
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-
2
-
4
-
6
-
8
-
10
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground emitter output characteristics
Ta
=
25
C
-
25.0
-
22.5
-
20.0
-
17.5
-
15.0
-
12.5
-
10.0
-
7.5
-
5.0
-
2.5
A
I
B
=
0
0
-
1.6
-
1.4
-
1.2
-
1.0
-
0.8
-
0.6
-
0.4
-
0.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Ground emitter propagation
characteristics
V
CE
= -
6V
Ta
=
25
C
500
200
100
50
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
Fig.3 DC current gain vs. collector current
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25
C
V
CE
= -
1V
-
5V
-
3V
-
0.05
-
0.1
-
0.2
-
0.5
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
Fig.4 Collector-Emitter saturation voltage
vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25
C
I
C
/I
B
=
50/1
20/1
10/1
500
200
100
50
0.5
1
2
5
10
20
50
V
CE
= -
6V
Fig.5 Transition frequency
vs. emitter current
TRANSITION FREQUENCY : f
T
(MH
Z
)
EMITTER CURRENT : I
E
(mA)
Ta
=
25
C
10
20
5
2
1
-
0.5
-
1
-
2
-
5
-
10
-
20
f
=
1MH
Z
I
E
=
0A
Fig.6 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Ta
=
25
C
Cob
FMY5
Transistor
Rev.B
3/4
10
20
5
2
1
-
0.5
-
1
-
2
-
5
-
10
-
20
Fig.7 Emitter input capacitance
vs. emitter-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cib
f
=
1MH
Z
I
C
=
0A
Ta
=
25
C
Tr2
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Ground emitter output characteristics
2
4
6
8
10
4
8
12
16
20
0
I
B
=
0
A
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.9 Ground emitter propagation characteristics
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2
0.6
0.4
0.8 1.0 1.2 1.4 1.6
Ta
=
25
C
V
CE
=
6V
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.10 DC current gain vs. collector current
0.2
0.5
1
2
5
10
20
50
50
100
200
500
Ta
=
25
C
V
CE
=
1V
3
V
5
V
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.11 Collector-emitter saturation voltage
vs. collector current ( )
1
2
5
10
20
50
0.02
0.05
0.1
0.2
0.5
Ta
=
25
C
I
C
/I
B
=
50
10
20
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.12 Collector-emitter saturation voltage
vs. collector current ( )
1
2
5
10
20
50
0.02
0.05
0.1
0.2
0.5
Ta
=
100
C
25
C
-
40
C
I
C
/I
B
=
10
COLLECTOR CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.13 Transition frequency vs. emitter current
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
100
200
500
50
V
CE
=
6V
Ta
=
25
C
FMY5
Transistor
Rev.B
4/4
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
Fig.14 Collector output capacitance
vs. collector-base voltage
-
0.5
1
2
5
10
20
2
1
5
10
20
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER INPUT CAPACITANCE : C
ib
(pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.15 Emitter input capacitance
vs. emitter-base voltage
-
0.5
1
2
5
10
20
2
1
5
10
20
Ta
=
25
C
f
=
1MHz
I
C
=
0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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