QS5U13
Transistors
1/4
Small switching (30V, 2.0A)
QS5U13
Features
1) The QS5U13 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Nch MOSFET have a low on-state resistance with a
fast switching.
3) Nch MOSFET is reacted a low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
Applications
Load switch, DC / DC conversion
External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol :
U13
0 to 0.1
2.9
0.1
2.8
0.2
1.9
0.2
0.95
0.95
(1)
(5)
(3)
(2)
(4)
0.3 to 0.6
0.85
0.1
1.0MAX
0.7
0.1
+
0.1
-
0.05
0.4
0.2 0.1
1.6
+
0.1
-
0.06
0.16
Structure
Silicon N-channel MOSFET
Schottky Barrier DIODE
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
QS5U13
TR
3000
Type
Equivalent circuit
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
2
1 ESD PROTECTION DIODE
2 BODY DIODE
1
(1)
(2)
(3)
(5)
(4)
QS5U13
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
V
RM
V
R
I
F
I
FSM
Tj
Parameter
V
V
DSS
Symbol
30
V
V
GSS
12
A
I
D
2.0
A
I
DP
8.0
A
I
S
0.8
A
Pw
10
s, Duty cycle
1%
Pw
10
s, Duty cycle
1%
I
SP
3.2
V
20
A
0.5
A
60Hz
1cyc.
2.0
C
125
C
Tch
150
V
30
Limits
Unit
Channel temperature
<Di>
<MOSFET>
W / Total / Mounted on a ceramic board
P
D
1.0
C
Tstg
-
50 to 150
Total power dissipation
Range of Storage temperature
<MOSFET AND Di>
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=
12V / V
DS
=
0V
V
DD
15V
Typ.
Max.
Unit
Conditions
V
(BR) DSS
30
-
-
V
I
D
=
1mA, / V
GS
=
0V
I
DSS
-
-
1
A
V
DS
=
30V / V
GS
=
0V
V
GS (th)
0.5
-
1.5
V
V
DS
=
10V / I
D
=
1mA
-
71
100
I
D
=
2.0A, V
GS
=
4.5V
R
DS (on)
-
76
107
m
m
m
I
D
=
2.0A, V
GS
=
4V
-
110
154
I
D
=
2.0A, V
GS
=
2.5V
1.5
-
-
S
V
DS
=
10V, I
D
=
2.0A
C
iss
-
175
-
pF
V
DS
=
10V
C
oss
-
50
25
-
pF
V
GS
=
0V
C
rss
-
8
-
pF
f
=
1MHz
t
d (on)
-
10
-
ns
t
r
-
21
-
ns
t
d (off)
-
8
-
ns
t
f
-
2.8
-
ns
Q
g
-
0.6
3.9
nC
Q
gs
-
0.8
-
nC
V
GS
=
4.5V
Q
gd
-
-
nC
I
D
=
2.0A
<MOSFET>Body diode (source-drain)
VSD
-
-
1.2
V
I
S
=
3.2A / V
GS
=
0V
Forward voltage
V
F
-
-
0.47
V
I
F
=
0.5A
I
R
-
-
100
A
V
R
=
20V
Pulsed
V
DD
15
V
I
D
=
1.0A
V
GS
=
4.5V
R
L
=
15
R
GS
=
10
Forward voltage
Reverse leakage
<Di>
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
QS5U13
Transistors
3/4
Electrical characteristic curves
<MOSFET>
0.0
0.5
1.0
1.5
2.0
2.5
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
Fig.1 Typical Transfer Characteristics
V
DS
=
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4.0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
10
100
1000
V
GS
=
2.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : V
GS
(V)
0
100
200
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
C
Pulsed
I
D
=
2A
I
D
=
1A
0.1
1
10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
Ta
=
25
C
Pulsed
V
GS
=
2.5V
V
GS
=
4V
V
GS
=
4.5V
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT : I
S
(A)
V
GS
=
0V
Pulsed
Fig.7 Reverse Drain Current
vs. Source-Drain Current
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
100
1000
10
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
SWITCHING TIME : t
(ns)
Fig.9 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta
=
25
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Pulsed
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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