QS5U26
Transistor
1/3
Small switching (
-
20V,
-
1.5A)
QS5U26
!
!
!
!
Features
1) The QS5U26 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
!
!
!
!
External dimensions (Units : mm)
TSMT5
Each lead has same dimensions
Abbreviated symbol : U26
0~0.1
2.9
2.8
1.9
1.6
0.95
0.95
0.4
(1)
(5)
(3)
(2)
(4)
0.3~0.6
0.85
1.0MAX
0.7
0.16
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
load switch, DC/DC conversion
!
!
!
!
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
!
!
!
!
Packaging specifications
QS5U26
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
!
!
!
!
Equivalent circuit
A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
2
1 ESD protection diode
2 Body diode
1
(1)
(2)
(3)
(5)
(4)
!
!
!
!
Absolute maximum ratings (Ta=25
C)
1
1
3
2
Parameter
V
V
DSS
Symbol
-
20
V
V
GSS
12
A
I
D
1.5
A
I
DP
6.0
A
I
S
-
0.75
A
I
SP
-
3.0
C
Tch
150
V
V
RM
30
V
V
R
20
A
I
F
0.5
A
I
FSM
2.0
C
Tj
125
W/TOTAL
P
D
1.0
C
Tstg
-
40~
+
125
Limits
Unit
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
1 Pw
10
s, Duty cycle
1%
2 60Hz
1cyc.
3 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Total power dissipatino
Range of strage temperature
Continuous
Pulsed
Continuous
Pulsed
<
MOSFET
>
<
Di
>
<
MOSFET AND Di
>
QS5U26
Transistor
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=
12V, V
DS
=0V
V
DD
-
15
V
V
DD
-
15
V
Typ.
Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
-
20
-
-
V
I
D
=
-
1mA, V
GS
=0V
Drain-source breakdown voltage
I
DSS
-
-
-
1
A
V
DS
=
-
20V, V
GS
=0V
Zero gate voltage drain current
V
GS (th)
-
0.7
-
-
2.0
V
V
DS
=
-
10V, I
D
=
-
1mA
Gate threshold voltage
-
160
200
m
I
D
=
-
1.5A, V
GS
=
-
4.5V
Static drain-source on-starte
resistance
R
DS (on)
-
180
240
m
I
D
=
-
1.5A, V
GS
=
-
4V
Forward transfer admittance
-
260
340
m
I
D
=
-
0.75A, V
GS
=
-
2.5V
Input capacitance
1.0
-
-
S
V
DS
=
-
10V, I
D
=
-
0.75A
Output capacitance
C
iss
-
325
-
pF
V
DS
=
-
10V
Reverse transfer capacitance
C
oss
-
60
40
-
pF
V
GS
=0V
Tum-on delay time
C
rss
-
10
-
pF
f=1MHz
Rise time
t
d (on)
-
10
-
ns
I
D
=
-
0.75A
Tum-off delay time
t
r
-
35
-
ns
Fall time
t
d (off)
-
10
-
ns
V
GS
=
-
4.5V
Total gate charge
t
f
-
4.2
-
ns
R
L
=20
Gate-source charge
Q
g
-
1.0
-
nC
R
GS
=10
Gate-drain charge
Q
gs
-
1.1
-
nC
V
GS
=
-
4.5V
Q
gd
-
-
nC
I
D
=
-
1.5A
Pulsed
<
MOSFET
>
!
!
!
!
Body diode (Source-drain)
Forward voltage
Forward voltage
V
SD
-
-
-
1.2
V
I
S
=
-
0.75A, V
GS
=0V
V
F
-
-
0.36
V
I
F
=0.1A
V
F
-
-
0.47
V
I
F
=0.5A
I
R
-
-
100
A
V
R
=20V
Reverse leakage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
Di
>
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
MOSFET
>
!
!
!
!
Electrical characteristic curves
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.1 Typical Transfer Characteristics
0.001
0.01
DRAIN CURRENT :
-
I
D
(A)
10
0.1
1
Ta
=
125
C
Ta
=
25
C
Ta
=-
25
C
Ta
=
75
C
V
DS
=-
10V
Pulsed
0.1
1
10
10
100
DRAIN CURRENT :
-
I
D
(A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (
)
1000
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=-
4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
10
100
DRAIN CURRENT :
-
I
D
(A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (
)
1000
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=-
4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
10
100
DRAIN CURRENT :
-
I
D
(A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
)
1000
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=-
2.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
400
I
D
=
-
0.75A
I
D
=
-
1.5A
Ta
=
25
C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
10
100
DRAIN CURRENT :
-
I
D
(A)
1000
V
GS
=-
2.5V
V
GS
=-
4.0V
V
GS
=-
4.5V
Ta
=
25
C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (
)
QS5U26
Transistor
3/3
0
0.5
1
1.5
2
0.01
0.1
1
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
Fig.7 Reverse Drain Current vs.
Source-Drain Current
REVERCE DRAIN CURRENT :
-
I
DR
(A)
10
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=
0V
Pulsed
0.01
0.1
1
10
100
10
100
1000
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
CAPACITANCE : C (pF)
10000
C
iss
C
oss
C
rss
Ta=25
C
f=1MH
Z
V
GS
=0V
0.01
0.1
1
10
1
10
100
DRAIN CURRENT :
-
I
D
(A)
Fig.9 Switching Characteristics
SWITCHING TIME : t (ns)
1000
t
d(off)
t
r
t
d(on)
t
f
Ta=25
C
V
DD
=
-
15V
V
GS
=
-
4.5V
R
G
=10
Pulsed
0
2
4
1
3
5
6
0
1
2
3
4
5
6
7
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input
Characteristics
GATE-SOURCE VOLTAGE : V
GS
(V)
8
Ta=25
C
V
DD
=
-
15V
I
D
=
-
1.5A
R
G
=10
Pulsed
!
!
!
!
Measurement circuits
Fig.11 Switching Time Measurement Circuit
Fig.12 Switching Waveforms
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveforms
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
V
GS
I
G(Const)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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