QS6J1
Transistors
1/3
Small switching (
-
20V,
-
1.5A)
QS6J1
Features
1) Two Pch MOSFET transistors in a single TSMT6
package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(2.5V).
Applications
Switch
Structure
Silicon P-channel MOSFET
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
QS6J1
TR
3000
Type
External dimensions (Unit : mm)
Each lead has same dimensions
TSMT6
Abbreviated symbol :
J01
0.16
0.85
2.9
2.8
1.6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
Equivalent circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
2
1
1
(1)
(6)
(3)
(4)
(2)
(5)
Absolute maximum ratings (Ta=25
C)
1
2
1
Parameter
V
V
DSS
Symbol
V
V
GSS
A
I
D
A
I
DP
A
I
S
A
I
SP
W / Total
P
D
Tch
Tstg
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
-
20
150
-
55 to
+
150
-
0.75
-
6
1.25
C
C
12
+
-
1.5
+
-
6
+
-
1 Pw 10
s, Duty cycle 1%
2 Mounted on a ceramic board
<
-
<
-
Thermal resistance
C / W / Total
Rth (ch-a)
100
Channel to ambient
Parameter
Symbol
Limits
Unit
QS6J1
Transistors
2/3
Electrical characteristics (Ta=25
C)
Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=
12V, V
DS
=
0V
V
DD
-
15V
Typ.
Max.
Unit
Conditions
V
(BR) DSS
-
20
-
-
V
I
D
=
-
1mA, V
GS
=
0V
I
DSS
-
-
-
1
A
V
DS
=
-
20V, V
GS
=
0V
V
GS (th)
-
0.7
-
-
2.0
V
V
DS
=
-
10V, I
D
=
-
1mA
-
155
215
I
D
=
-
1.5A, V
GS
=
-
4.5V
R
DS (on)
-
170
235
m
m
m
I
D
=
-
1.5A, V
GS
=
-
4V
-
310
430
I
D
=
-
0.75A, V
GS
=
-
2.5V
1.0
-
-
S
V
DS
=
-
10V, I
D
=
-
0.75A
C
iss
-
270
-
pF
V
DS
=
-
10V
C
oss
-
40
35
-
pF
V
GS
=
0V
C
rss
-
10
-
pF
f
=
1MHz
t
d (on)
-
12
-
ns
t
r
-
45
-
ns
t
d (off)
-
20
-
ns
t
f
-
3.0
-
ns
Q
g
-
0.8
-
nC
Q
gs
-
0.85
-
nC
V
GS
=
-
4.5V
Q
gd
-
-
nC
V
DD
-
15
V
I
D
=
-
0.75A
V
GS
=
-
4.5V
R
L
=
20
R
G
=
10
R
L
=
10
R
G
=
10
I
D
=
-
1.5A
Body diode (Source-drain)
V
SD
-
-
-
1.2
V
I
S
=
-
0.75A, V
GS
=
0V
Forward voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Electrical characteristic curves
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
CAPACITANCE : C
(pF)
100
1000
10
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
C
iss
C
oss
C
rss
1
10
100
1000
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
SWITCHING TIME : t
(ns)
Fig.2 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta
=
25
C
V
DD
= -
15V
V
GS
= -
4.5A
R
G
=
10
Pulsed
Ta
=
25
C
V
DD
= -
15V
I
D
= -
1.5A
R
G
=
10
Pulsed
0
0.5
1
1.5
2
2.5
3
3.5
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.3 Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
= -
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0
100
200
300
400
500
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Ta
=
25
C
Pulsed
I
D
= -
1.5A
I
D
= -
0.75A
0.0
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT :
-
I
S
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
Ta
=
25
C
V
GS
=
0V
Pulsed
QS6J1
Transistors
3/3
10
100
1000
10000
0.1
1
10
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current (
)
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
V
GS
= -
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
10
100
1000
10000
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current (
)
V
GS
= -
4V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
10
100
1000
10000
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current (
)
V
GS
= -
2.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
Measurement circuits
Fig.10 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.11 Switching Waveforms
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
Fig.12 Gate Charge Measurement Circuit
V
GS
I
G(Const)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.13 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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