QS6K1
Transistors
Rev.A 1/3
Switching (30V, 1.0A)
QS6K1
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
Application
Power switching, DC / DC converter.
Structure
Silicon N-channel
MOS FET
External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : K01
TSMT6
0.7
0.1
0.85
0.1
1.0MAX.
2.9
0.1
1.9
0.2
0.95
0.95
2.8
0.2
0.4
1pin mark
(1)
(5)
(3)
(6)
(2)
(4)
+
0.1
-
0.05
1.6
+
0.2
-
0.1
0.16
0~0.1
0.3~0.6
+
0.1
-
0.06
Absolute maximum ratings (Ta=25
C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
12
A
I
D
A
I
DP
A
I
S
A
I
SP
W
P
D
C
Tch
150
C
Tstg
-
55 to
+
150
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (T
C
=
25
C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
1 Pw
10
s, Duty cycle
1%
1.0
4.0
0.8
4.0
1.25
Equivalent circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
(1)
1
2
2
1
(6)
(4)
(5)
(1)
(3)
(2)
(2)
(3)
(6)
(5)
(4)
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance (Ta=25
C)
C / W
Rth (ch-A)
100
Parameter
Symbol
Limits
Unit
Channel to ambient
QS6K1
Transistors
Rev.A 3/3
Electrical characteristic curves
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
1
CAPACITANCE : C
(pF) 100
1000
10
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
100
SWITCHING TIME : t
(ns)
1000
Fig.2 Switching Characteristics
Ta
=
25
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Pulsed
t
r
t
f
t
d (off)
t
d (on)
0
1
2
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
3
Ta
=
25
C
V
DD
=
15V
I
D
=
1A
R
G
=
10
Pulsed
Fig.3 Dynamic Input Characteristics
0.0
0.5
1.0
1.5
2.0
GATE-SOURCE VOLTAGE : V
GS
(V)
10
0.001
0.01
0.1
1
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
=
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
2
4
6
8
10
12
14
16
GATE-SOURCE VOLTAGE : V
GS
(V)
0
100
200
300
400
500
600
700
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
I
D
=
1A
I
D
=
0.5A
Ta
=
25
C
Pulsed
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
100
1000
10000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
4.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
0.01
0.1
1
10
100
1000
10000
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
4V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
0.01
0.1
1
10
100
1000
10000
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
2.5V
Pulsed
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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