QS6U22
Transistors
1/3
Small switching (
-
20V,
-
1.5A)
QS6U22
!
!
!
!
Features
1) The QS6U22 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(4V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
Load switch, DC / DC conversion
!
!
!
!
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
!
!
!
!
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
QS6U22
TR
3000
Type
!
!
!
!
External dimensions (Unit : mm)
Each lead has same dimensions
TSMT6
Abbreviated symbol : U22
0.16
0.85
2.9
2.8
1.6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
!
!
!
!
Equivalent circuit
2
1
(1)
(2)
(5)
(3)
(6)
(4)
A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N / C
(6) Cathode
1 ESD PROTECTION DIODE
2 BODY DIODE
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Channel temperature
Total power dissipation
Range of Storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
V
RM
V
R
I
F
I
FSM
Tj
Parameter
V
V
DSS
Symbol
-
20
V
V
GSS
12
A
I
D
1.5
A
I
DP
6.0
A
I
S
-
0.75
A
I
SP
-
6.0
V
20
A
0.7
A
3.0
C
150
C
Tch
150
V
25
Limits
Unit
W / Total
P
D
1.25
C
Tstg
-
55 to
+
150
1 Pw
10
s, Duty cycle
1%
2 60Hz
1cyc.
3 Total mounted on a ceramic board
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
1
1
2
3
Di
MOSFET
MOSFET AND Di
QS6U22
Transistors
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=
12V, V
DS
=
0V
Typ.
Max.
Unit
Conditions
V
(BR) DSS
-
20
-
-
V
I
D
=
-
1mA, V
GS
=
0V
I
DSS
-
-
-
1
A
V
DS
=
-
20V, V
GS
=
0V
V
GS (th)
-
0.7
-
-
2.0
V
V
DS
=
-
10V, I
D
=
-
1mA
-
155
215
I
D
=
-
1.5A, V
GS
=
-
4.5V
R
DS (on)
-
170
235
m
m
m
I
D
=
-
1.5A, V
GS
=
-
4V
-
310
430
I
D
=
-
0.75A, V
GS
=
-
2.5V
1.0
-
-
S
V
DS
=
-
10V, I
D
=
-
0.75A
C
iss
-
270
-
pF
V
DS
=
-
10V
C
oss
-
40
35
-
pF
V
GS
=
0V
C
rss
-
10
-
pF
f
=
1MHz
t
d (on)
-
12
-
ns
t
r
-
45
-
ns
t
d (off)
-
20
-
ns
t
f
-
3.0
-
ns
Q
g
-
0.8
-
nC
Q
gs
-
0.85
-
nC
Q
gd
-
-
nC
V
DD
-
15
V
I
D
=
-
0.75A
V
GS
=
-
4.5V
R
L
=
20
R
G
=
10
MOSFET
V
DD
-
15V
V
GS
=
-
4.5V
R
L
=
10
/ R
G
=10
I
D
= -
1.5A
!
!
!
!
Body diode (Source-drain)
V
SD
-
-
-
1.2
V
I
S
=
-
0.75A, V
GS
=
0V
Forward voltage
V
F
-
-
0.49
V
I
F
=
0.7A
I
R
-
-
200
A
V
R
=
20V
Forward voltage drop
Reverse leakage
Di
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
MOSFET
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
!
!
!
!
Electrical characteristic curves
<MOSFET>
1
1.5
2
2.5
3
3.5
4
4.5
5
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
Fig.1 Typical Transfer Characteristics
V
DS
= -
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
100
1000
10000
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (
)
V
GS
= -
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (
)
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
100
1000
10000
V
GS
= -
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
100
1000
10000
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
)
V
GS
= -
4V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
2
4
6
8
10
12
14
16
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
200
300
400
500
600
700
800
900
1000
1100
1200
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Ta
=
25
C
Pulsed
I
D
= -
1.2A
I
D
= -
0.6A
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
100
1000
10000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Ta
=
25
C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( )
V
GS
= -
10V
V
GS
= -
4.5V
V
GS
= -
4.0V
QS6U22
Transistors
3/3
0.0
0.5
1
1.5
2
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT :
-
I
S
(A)
V
GS
=
0V
Pulsed
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
CAPACITANCE : C
(pF)
100
1000
10
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
C
iss
C
oss
C
rss
1
10
100
1000
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
SWITCHING TIME : t
(ns)
Fig.9 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta
=
25
C
V
DD
= -
15V
V
GS
= -
10A
R
G
=
10
Pulsed
Ta
=
25
C
V
DD
= -
15V
I
D
= -
1.2A
R
G
=
10
Pulsed
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.10 Dynamic Input Characteristics
!
!
!
!
Measurement circuits
Fig.11 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.12 Switching Waveforms
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
Fig.13 Gate Charge Measurement Circuit
V
GS
I
G(Const)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.14 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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