QS6U24
Transistor
1/3
Small switching (
-
30V,
-
1A)
QS6U24
!
Features
1) The QS6U24 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(4V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
!
External dimensions (Units : mm)
0.16
0.85
2.9
2.8
1.6
0.4
1pin mark
(1)
(5)
(3)
(6)
(2)
(4)
Each lead has same dimensions
Abbreviated symbol : U24
TSMT6
(1)Anode
(2)Source
(3)Gate
(4)Drain
(5)N/C
(6)Cathode
load switch, DC/DC conversion
!
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
!
Packaging specifications
QS6U24
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
!
Equivalent circuit
2
1
(1)
(2)
(5)
(3)
(6)
(4)
(1)Anode
(2)Source
(3)Gate
(4)Drain
(5)N/C
(6)Cathode
A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
1 ESD protection diode
2 Body diode
!
Absolute maximum ratings (Ta=25
C)
1
1
Parameter
V
V
DSS
Symbol
-
30
V
V
GSS
20
A
I
D
1.0
A
I
DP
2.0
A
I
S
-
0.3
A
I
SP
-
1.2
C
Tch
150
Limits
Unit
Parameter
Symbol
Limits
Unit
2
3
V
V
RM
25
Parameter
Symbol
Limits
Unit
V
V
R
20
A
I
F
0.7
A
I
FSM
3.0
C
Tj
125
P
D
1.0
C
Tstg
-
40~
+
125
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
W/Total
1 Pw
10
s, Duty cycle
1%
2 60Hz
1cyc.
3 Total mounted on a ceramic board
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Total power dissipatino
Range of strage temperature
<
MOSFET
>
<
Di
>
<
MOSFET AND Di
>
QS6U24
Transistor
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=
20V, V
DS
=0V
V
DD
-
15
V
V
DD
-
15
V
Typ.
Max.
Unit
Conditions
V
(BR) DSS
-
30
-
-
V
I
D
=
-
1mA, V
GS
=0V
I
DSS
-
-
-
1
A
V
DS
=
-
30V, V
GS
=0V
V
GS (th)
-
1.0
-
-
2.5
V
V
DS
=
-
10V, I
D
=
-
1mA
-
300
400
m
I
D
=
-
1A, V
GS
=
-
10V
R
DS (on)
-
500
700
m
I
D
=
-
0.5A, V
GS
=
-
4.5V
-
600
800
m
I
D
=
-
0.5A, V
GS
=
-
4V
0.5
-
-
S
V
DS
=
-
10V, I
D
=
-
0.5A
C
iss
-
90
-
pF
V
DS
=
-
10V
C
oss
-
25
16
-
pF
V
GS
=0V
C
rss
-
9
-
pF
f=1MHz
t
d (on)
-
7
-
ns
I
D
=
-
0.5A
t
r
-
18
-
ns
t
d (off)
-
7
-
ns
V
GS
=
-
10V
t
f
-
1.7
-
ns
R
L
=30
Q
g
-
0.6
-
nC
R
GS
=10
Q
gs
-
0.4
-
nC
V
GS
=
-
5V
Q
gd
-
-
nC
I
D
=
-
1.0A
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
<
MOSFET
>
!
!
!
!
Body diode (Source-drain)
V
F
-
-
0.49
V
I
F
=0.7A
I
R
-
-
200
A
V
R
=20V
V
SD
-
-
-
1.2
V
I
S
=
-
0.3A, V
GS
=0V
Forward voltage
Reverse leakage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
MOSFET
>
Forward voltage drop
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
<
Di
>
!
!
!
!
Electrical characteristic curves
1
1.5
2
2.5
3
3.5
4
4.5
5
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.1 Typical Transfer Characteristics
0.001
0.01
DRAIN CURRENT :
-
I
D
(A)
10
0.1
1
Ta
=
125
C
Ta
=
25
C
Ta
=-
25
C
Ta
=
75
C
V
DS
=-
10V
Pulsed
0.1
1
10
100
1000
DRAIN CURRENT :
-
I
D
(A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (
)
10000
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=-
10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
100
1000
DRAIN CURRENT :
-
I
D
(A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (
)
10000
V
GS
=-
4.5V
Pulsed
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
0.1
1
10
100
1000
DRAIN CURRENT :
-
I
D
(A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
)
10000
V
GS
=-
4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
0
2
4
6
8
10
12
14
16
200
300
400
500
600
700
800
900
1000
1100
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
1200
I
D
=
-
1.2A
I
D
=
-
0.6A
Ta
=
25
C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
0.1
1
10
100
1000
DRAIN CURRENT :
-
I
D
(A)
10000
Ta
=
25
C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
V
GS
=-
4.0V
V
GS
=-
4.5V
V
GS
=-
10V
QS6U24
Transistor
3/3
0
0.5
1
1.5
2
0.01
0.1
1
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
REVERCE DRAIN CURRENT :
-
I
DR
(A)
10
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
V
GS
=
0V
Pulsed
0.01
0.1
1
10
100
10
100
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
CAPACITANCE : C (pF)
1000
C
iss
C
oss
C
rss
Ta=25
C
f=1MH
Z
V
GS
=0V
0.01
0.1
1
10
1
10
100
DRAIN CURRENT :
-
I
D
(A)
Fig.9 Switching Characteristics
SWITCHING TIME : t (ns)
1000
t
d(off)
t
r
t
d(on)
t
f
Ta=25
C
V
DD
=
-
15V
V
GS
=
-
10V
R
G
=10
Pulsed
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
1
2
3
4
5
6
7
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input
Characteristics
GATE-SOURCE VOLTAGE : V
GS
(V)
8
Ta=25
C
V
DD
=
-
15V
I
D
=
-
1.2A
R
G
=10
Pulsed
!
!
!
!
Measurement circuits
Fig.11 Switching Time Measurement Circuit
Fig.12 Switching Waveforms
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveforms
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
V
GS
I
G(Const)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
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