ChipFind - документация

Электронный компонент: QST6

Скачать:  PDF   ZIP

Document Outline

QST6
Transistors
1/2
Low frequency amplifier
QST6
!
!
!
!
Application
Low frequency amplifier
Driver
!
!
!
!
Features
A collector current is large.
2) V
CE(sat)
- 180mV
At I
C
= - 1A / I
B
= - 50mA
<
=
1)
!
!
!
!
External dimensions (Units : mm)
1.6
2.8
0.4
0.16
( 3
)
0.85
( 2
)
2.9
( 1
)
Each lead has same dimensions
Abbreviated symbol : T06
(6)
(5)
(4)
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
15
-
12
-
6
-
2
500
150
-
55~
+
150
-
4
1
Unit
V
V
V
A
A
mW
C
C
2
Each Termminal Mounted on a Recommended
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
!
!
!
!
Equivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0A, f
=
1MHz
f
T
-
360
-
MHz
V
CE
=-
2V, I
E
=
200mA, f
=
100MHz
BV
CBO
-
15
-
-
V
I
C
=-
10
A
BV
CEO
-
12
-
-
V
I
C
=-
1mA
BV
EBO
-
6
-
-
V
I
E
=-
10
A
I
CBO
-
-
-
100
nA
V
CB
=-
15V
I
EBO
-
-
-
100
nA
V
EB
=-
6V
V
CE(sat)
-
-
100
-
180
mV
I
C
=-
1A, I
B
=-
50mA
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
200mA
Cob
-
15
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
QST6
Transistors
2/2
!
!
!
!
Packaging specifications
QST6
TR
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
!
!
!
!
Electrical characteristic curves
-
0.001
-
0.01
-
0.1
10
100
1000
-
1
-
10
COLLECTOR CURRENT : I
C
(
A)
DC CURRENT GAIN : h
FE
PULSED
V
CE
=-
2V
Ta
=
100
C
25
C
-
40
C
Fig1. DC current gain
vs.collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(
A)
BASE SATURATION VOLTAGE : V
BE(sat)
(
V)
PULSED
I
C
/I
B
=
20
V
CE(sat)
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs.collector current
V
BE(sat)
10
-
0.001
-
0.01
-
0.1
-
1
-
10
-
0.001
-
0.01
-
0.1
-
1
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
I
C
/I
B
=
50
20
10
PULSED
Ta
=
25
C
Fig.3 Collector-emitter saturation voltage
vs.collector current
0
-
0.5
-
1
-
0.001
-
0.1
-
1
-
0.01
-
10
BASE TO EMITTER CURRENT : V
BE
(V
)
COLLECTOR CURRENT : I
C
(A)
Fig.4 Grounded emitter propagation characteristics
PULSED
V
CE
=-
2V
Ta
=
100
C
25
C
-
40
C
Ta
=
25
C
0.001
0.01
0.1
10
100
1000
1
10
EMITTER CURRENT : I
E
(
A)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.5 Gain bandwidth product
vs.emitter current
Ta
=
25
C
V
CE
=-
2V
PULSED
-
0.001
-
0.01
-
0.1
-
1
COLLECTOR CURRENT : I
C
(A)
1
10
1000
100
Ta
=
25
C
PULSED
I
C
=
20 I
B
1
=-
20
tstg
tdon
tr
tf
I
B
=
2
Fig.6 Switching time
SWITCHING TIME : (ns)
-
1
-
10
-
100
-
0.1
1
10
100
1000
f
=
1MHz
I
E
=
0A
Ta
=
25
C
EMITTER INPUT CAPACITANCE : Cib (pF)
Cib
Cob
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig7. Collector output capacitance vs.collector-base voltage
Emitter input capacitance vs.emitter-base voltage
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)