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Электронный компонент: QST8

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QST8
Transistors
Rev.A
1/2
General purpose amplification (
-
12V,
-
1.5A)
QST8

Application
Low frequency amplifier
Driver

Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE
(sat)
: max.
-
200mV
At I
C
=
-
500mA / I
B
=
-
25mA

External dimensions (Unit : mm)
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T08
0.16
0.85
2.9
2.8
1.6
0.4
(1)
(5)
(3)
(6)
(2)
(4)

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
15
-
12
-
6
-
1.5
500
150
-
55 to
+
150
-
3
1
Unit
V
V
V
A
A
mW/TOTAL
C
C
2
1.25
W/TOTAL
3
0.9
W/ELEMENT
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse, Pw
=
1ms
2 Each Terminal Mounted on a Recommended
3 Mounted on a 25mm
25mm
0.8mm ceramic substrate
t


Equivalent circuit
(1)
(2)
(3)
Tr
1
Tr
2
(5)
(6)
(4)
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
f
T
-
400
-
MHz
BV
CBO
-
15
-
-
V
BV
CEO
-
12
-
-
V
BV
EBO
-
6
-
-
V
I
CBO
-
-
-
100
nA
I
EBO
-
-
-
100
nA
V
CE(sat)
-
-
85
-
200
mV
h
FE
270
-
680
-
Cob
-
12
-
pF
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Corrector output capacitance
Pulsed
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
V
CE
= -
2V, I
E
=
200mA, f
=
100MHz
I
C
= -
10
A
I
C
= -
1mA
I
E
= -
10
A
V
CB
= -
15V
V
EB
= -
6V
I
C
= -
500mA, I
B
= -
25mA
V
CE
= -
2V, I
C
= -
200mA
QST8
Transistors
Rev.A
2/2
Packaging specifications
QST8
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
Electrical characteristic curves
-
0.001
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
10
DC CURRENT GAIN : h
FE
1000
100
Ta
=
100
C
Ta
= -
40
C
Ta
=
25
C
V
CE
= -
2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Ta
=
25
C
Ta
=
100
C
Ta
=
25
C
Ta
=
100
C
V
BE (sat)
V
CE (sat)
I
C
/ I
B
=
20/1
Pulsed
Ta
= -
40
C
Ta
= -
40
C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
-
0.001
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
-
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-
1
-
0.1
-
0.01
I
C
/ I
B
=
10
I
C
/ I
B
=
20
I
C
/ I
B
=
50
Ta
=
25
C
Pulsed
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
-
0.5
-
1.0
-
1.5
BASE TO EMITTER CURRENT : V
BE
(V)
-
0.001
COLLECTOR CURRENT : I
C
(A)
-
10
-
1
-
0.1
-
0.01
V
CE
=
2V
Pulsed
Ta
=
100
C
Ta
=
25
C
Ta
= -
40
C
Fig.4 Grounded emitter propagation
characteristics
0.001
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta
=
25
C
V
CE
= -
2V
Pulsed
Fig.5 Gain bandwidth product
vs. emitter current
-
0.001
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
1000
100
10
tstg
tdon
tf
tr
I
C
=
20 I
B
1
= -
20 I
B
2
Ta
=
25
C
Pulsed
-
0.1
-
1
-
10
-
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
10
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
Ta
=
25
C
f
=
1MHz
I
E
=
0A
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Appendix
Appendix1-Rev1.1


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