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Электронный компонент: QSX1

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QSX1
Transistors
Rev.A
1/2
General purpose amplification (15V, 6A)
QSX1

Application
Low frequency amplifier

Features
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
200mV
at I
C
= 3A / I
B
= 60mA




External dimensions (Unit : mm)
1.6
2.8
0.4
0.16
( 3
)
0.85
( 2
)
2.9
( 1
)
(6)
(5)
(4)
Each lead has same dimensions
Abbreviated symbol : X01
ROHM : TSMT6

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
6
1.25
150
-
55 to
+
150
10
1
Unit
V
V
V
A
A
W
C
C
3
500
mW
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse, Pw
=
1ms
2 Each Terminal Mounted on a Recommended
3 Mounted on a 25mm
25mm
0.8mm Ceramic substrate
t

Equivalent Circuit
6pin
5pin
4pin
1pin
2pin
3pin
Electrical characteristics (Ta=25
C)
Parameter
Symbol Min.
Typ. Max. Unit
Conditions
15
-
-
V
I
C
=
10
A
BV
CBO
12
-
-
V
I
C
=
1mA
BV
CEO
6
-
-
V
I
E
=
10
A
BV
EBO
-
-
100
nA
V
CB
=
15V
I
CBO
-
-
100
nA
V
EB
=
6V
I
EBO
-
80
200
mV
I
C
/I
B
=
3A/60mA
V
CE (sat)
270
-
680
-
V
CE
/I
C
=
2V/500mA
h
FE
-
250
-
MHz V
CE
=
2V, I
E
= -
500mA, f
=
100MHz
f
T
-
80
-
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Cob
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Pulsed

QSX1
Transistors
Rev.A
2/2
Packaging specifications
QSX1
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)

Electrical characteristic curves
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
100
DC CURRENT GAIN : h
FE
1000
V
CE
=
2V
Pulsed
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
I
C
/I
B
=
20/1
Pulsed
Ta
=
25
C
Ta
=
125
C
Ta
= -
40
C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Fig.2 Collector-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
C
(A)
1
I
C
/I
B
=
50/1
Pulsed
0.001
0.01
0.1
1
10
0.001
0.1
0.01
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
0.1
1
10
I
C
/I
B
=
20/1
Pulsed
Ta
=
25
C
Ta
= -
40
C
Ta
=
125
C
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
Fig.4 Base-emitter saturation voltage
vs. collector current
0
1
10
BASE TO EMITTER CURRENT : V
BE
(V)
0.1
COLLECTOR CURRENT : I
C
(A)
10
1
V
CE
=
2V
Pulsed
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
Fig.5 Grounded emitter propagation
characteristics
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
10
100
1000
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10000
I
C
=
0A
f
=
1MHz
Ta
=
25
C
Cib
Cob
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
V
CE
=
2V
Ta
=
25
C
f
=
100MHz
Fig.7 Gain bandwidth product
vs. emitter current
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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