QSX4
Transistors
Rev.A
1/2
Low frequency amplifier
QSX4
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) V
CE(sat)
: max. 370mV
At lc=1.5A / l
B
=75mA
External dimensions (Unit : mm)
1.6
2.8
0.4
0.16
( 3
)
0.85
( 2
)
2.9
( 1
)
Each lead has same dimensions
Abbreviated symbol : X04
(6)
(5)
(4)
ROHM : TSMT6
QSX4
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
2
0.5
150
-
55 to
+
150
4
1
Unit
V
V
V
A
A
W
C
C
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperautre
2
1.25
W
3
1 Single pluse, Pw
=
1ms
2 Each Terminal Mounted on a Recommended Land Pattern
3 Mounted on a 25mm
25mm
t
0.8mm ceramic substrate
Equivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
QSX4
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Transition frequency
Collector output capacitance
f
T
-
280
-
MHz
V
CE
=
2V, I
E
=-
200mA, f
=
100MHz
BV
CBO
30
-
-
V
I
C
=
10
A
Collector-emitter breakdown voltae
BV
CEO
30
-
-
V
I
C
=
1mA
Collector-base breakdown voltae
BV
EBO
6
-
-
V
I
E
=
10
A
Emitter-base breakdown voltage
I
CBO
-
-
100
nA
V
CB
=
30V
Collector cutoff current
I
EBO
-
-
100
nA
V
EB
=
6V
Emitter cutoff current
V
CE(sat)
-
180
370
mV
I
C
=
1.5A, I
B
=
75mA
Collector-emitter saturation voltage
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
200mA
DC current gain
Cob
-
20
-
pF
Pulsed
QSX4
Transistors
Rev.A
2/2
Packaging specifications
Package
Code
Taping
Basic ordering unit (Pieces)
QSX4
TR
3000
Type
Electrical characteristic curves
Fig.1 DC current gain
vs. collector current
10
100
1000
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
VCE=
-
2V
Pulsed
Ta=125 C
Ta=25 C
Ta=
-
25 C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
IC/IB=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta=
-
25 C
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
IC/IB=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta=
-
25 C
Fig.3 Base-emitter saturation voltage
vs. collector current
Fig.4 Grounded emitter propagation
characteristics
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
0
1.4
Fig.5 Gain bandwidth product
vs. emitter current
10
100
1000
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C
VCE=
-
2V
f= 100MHz
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
100
1000
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
IC=0A
f=1MHz
Ta=25 C
Cob
Cib
0.2
0.4
0.6
0.8
1
1.2
VCE=
-
2V
Pulsed
Ta=125 C
Ta=25 C
Ta=
-
25 C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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