QSZ1
Transistors
1/4
General purpose transistor
QSZ1
A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package.
Applications
DC / DC converter
Motor driver
Features
1) Low V
CE
(sat)
2) Small package
Structure
Silicon epitaxial planar transistor
Equivalent circuit
Tr1
Tr2
(5)
(4)
(3)
(2)
(1)
Packaging specifications
Type
QSZ1
TSMT5
Z01
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
External dimensions (Unit : mm)
2.9
2.8
1.9
1.6
0.95
0.95
0.4
(1)
(5)
(3)
(2)
(4)
0
0.1
0.16
0.85
0.7
0.3
0.6
ROHM : TSMT5
QSZ1
Abbreviated symbol : Z01
Each lead has same dimensions
QSZ1
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
-
15
V
V
V
A
C
C
-
12
-
6
-
2
A
-
4
500
150
-
55 to
+
150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
I
CP
mW/Total
1.25
0.9
1
2
W/Total
3
W/Element
3
1
Single pulse Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
+
+
Tr2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
2
500
150
-
55 to
+
150
4
Unit
V
V
V
A
A
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
mW/Total
1.25
0.9
1
2
W/Total
3
W/Element
3
1
Single pulse Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
+
+
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Cob
Min.
-
15
-
12
-
6
-
-
270
-
-
-
-
-
-
-
-
120
-
15
-
-
-
-
100
-
100
680
-
180
-
V
I
C
= -
10
A
I
C
= -
1mA
I
E
= -
10
A
V
CB
= -
15V
V
EB
= -
6V
V
CE
= -
2V, I
C
= -
200mA
I
C
= -
1mA, I
B
= -
50mA
V
CB
= -
10V, I
E
=
0mA, f
=
1MHz
V
V
nA
-
mV
nA
f
T
-
360
-
V
CE
= -
2V, I
E
=
200mA, f
=
100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collerctor-emitter saturation voltage
Transition frequency
Output capacitance
Pulsed
Tr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
-
360
-
MHz
V
CE
=
2V, I
E
=-
200mA, f
=
100MHz
BV
CBO
15
-
-
V
I
C
=
10
A
BV
CEO
12
-
-
V
I
C
=
1mA
BV
EBO
6
-
-
V
I
E
=
10
A
I
CBO
-
-
100
nA
V
CB
=
15V
I
EBO
-
-
100
nA
V
EB
=
6V
V
CE(sat)
-
90
180
mV
I
C
=
1A, I
B
=
50mA
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
200mA
Cob
-
20
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
QSZ1
Transistors
3/4
Electrical characteristic curves
Tr1
Fig.1 DC current gain
vs. collector current
COLLECTOR CURRENT : I
C
(
A)
DC CURRENT GAIN : h
FE
0.001
0.01
0.1
100
1000
1
10
PULSED
V
CE
= -
2V
Ta
=
100
C
-
40
C
25
C
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs.collector current
COLLECTOR CURRENT : I
C
(
A)
BASE SATURATION VOLTAGE : V
BE(sat) :
(
V)
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
Ta
=
100
C
25
C
-
40
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
10
PULSED
I
C
/I
B
=
20
Ta
=
100
C
-
40
C
25
C
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat):
(
V)
I
C
/I
B
=
50
/
1
PULSED
Ta
=
25
C
I
C
/I
B
=
20
/
1
I
C
/I
B
=
10
/
1
Fig.4 Grounded emitter propagation
characteristics
0
0.5
0.001
0.1
1
0.01
10
1
PULSED
V
CE
= -
2V
BASE TO EMITTER VOLTAGE : V
BE
(V
)
COLLECTOR CURRENT I
C :
(A)
Ta
=
100
C
25
C
-
40
C
0.001
0.01
0.1
10
100
1000
1
10
Ta
=
25
C
V
CE
= -
2V
f
=
100MHz
Fig.5 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : I
E
(
A)
TRANSITION FREQUENCY : f
T :
(MHz)
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
10
100
1000
IC=20 IB1=-20IB2
Ta
=
25
C
f
=
100MHz
tstg
tdon
tr
tf
0.1
1
10
100
1000
10
Ta
=
25
C
I
E
=
0mA
f
=
1MHz
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : V
EB
(
V
)
EMITTER INPUT CAPACITANCE:Cib
(
pF
)
COLLECTOR OUTPUT CAPACITANCE:Cob
(
pF
)
cib
cob
QSZ1
Transistors
4/4
Tr2
0.001
0.01
0.1
1
10
10
DC CURRENT GAIN : h
FE
1000
100
Ta
=
100
C
Ta
= -
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
COLLECTOR CURRENT : I
C
(A)
Fig.8 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
0.001
0.01
1
0.1
I
C
/I
B
=
20/1
V
CE
=
2V
Pulsed
Ta
=
100
C
Ta
= -
40
C
Ta
=
25
C
COLLECTOR CURRENT : I
C
(A)
Fig.9 Base-emitter saturation voltage
vs. collector current
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
CE(sat)
(V)
0.001
0.01
0.1
1
10
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta
=
25
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
COLLECTOR CURRENT : I
C
(A)
Fig.10 Collector-emitter saturation voltage
vs. collector current
0
0.5
1
1.5
0.001
COLLECTOR CURRENT : I
C
(A)
0.01
10
0.1
1
V
CE
=
2V
Pulsed
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
BASE TO EMITTER CURRENT : V
BE
(V)
Fig.11 Grounded emitter propagation
characteristics
0.001
0.01
0.1
1
10
Fig.12 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta
=
25
C
V
CE
=
2V
f
=
100MHz
0.1
1
1
10
1000
100
Ta
=
25
C
V
CE
=
5V
f
=
100MHz
tstg
tdon
tf
tr
0.01
10
Fig.13 Switching time
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME : (ns)
1
10
100
0.1
1
10
100
1000
f
=
1MHz
I
C
=
0A
Ta
=
25C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Cib
Cob
Fig.14 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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