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Электронный компонент: RB021VA-90

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RB021VA-90
Diodes
Rev.B
1/3
Schottky barrier diode
RB021VA-90

Applications
General rectification
Features
1) Small power mold type
(TUMD2)
2) Low V
F
3) High reliability

Structure
Silicon epitaxial planar


External dimensions (Unit : mm)












Land size figure (Unit : mm)
1.1
2.0
0.8
0
.
5
TUMD2
ROHM : TUMD2
dot (year week factory) + day
1.30.05
0.80.05
2.
5
0.
2
1.
9
0.
1
0.60.2
0.1
0.170.1
0.05







Structure


Taping dimensions (Unit : mm)
4.00.1
2.00.05
1.550.1
0
1.430.05
4.00.1
1.00.2
0
2.
7
5
3.
5
0
.
05
1.
7
5
0
.
1
8.
0
0.
2
0.250.05
0.90.08
2.
8
0.
0
5









Absolute maximum ratings (Ta=25
C)
Symbol
Unit
V
RM
V








Electrical characteristic (Ta=25
C)


V
R
90
R
V
Io
A
I
FSM
A
Tj
Tstg
Storage temperature
-40 to +125
Forward current surge peak(60Hz
1cyc)
5
Junction temperature
125
everse voltage (DC)
Average rectified forward current
0.2
Parameter
Limits
Reverse voltage (repetitive peak)
90
Symbol
Min.
Typ.
Max.
Unit
V
F
-
-
0.49
V
I
F
=200mA
I
R
-
-
900
A
V
R
=90V
Conditions
Parameter
Forward voltage
Reverse current
RB021VA-90
Diodes
Rev.B
2/3
Electrical characteristic curves















































CA
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
TE
RM
INA
L
S
:
C
t
(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
10
100
0
10
20
30
f=1MHz
VF DISPERSION MAP
F
O
R
W
A
R
D

V
O
L
T
AG
E:
VF
(
m
V)
420
430
440
450
460
470
AVE:442.8mV
Ta=25
IF=0.2A
n=30pcs
R
E
V
E
RS
E

C
U
RR
E
N
T:I
R
(
u
A
)
IR DISPERSION MAP
0
50
100
150
200
250
300
Ta=25
VR=90V
n=30pcs
AVE:28.68uA
CA
P
A
C
I
T
A
N
C
E

B
E
T
W
EE
N
TE
R
M
I
N
AL
S:
Ct(
p
F
)
Ct DISPERSION MAP
Ct
60
61
62
63
64
65
66
67
68
69
70
AVE:64.35pF
Ta=25
f=1MHz
VR=0V
n=10pcs
IFSM DISRESION MAP
PE
AK

S
U
R
G
E
FO
RW
A
R
D

C
U
RR
E
N
T:I
F
S
M
(A
)
0
5
10
15
20
25
30
8.3ms
Ifsm
1cyc
AVE:14.6A
trr DISPERSION MAP
RES
E
R
V
E
RE
CO
VE
R
Y

T
IM
E:
tr
r
(
n
s
)
0
5
10
15
20
25
30
AVE:6.40ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
R
R
E
N
T:I
F
S
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
5
10
15
20
25
30
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
F
O
R
W
ARD

CU
RR
E
N
T:
IF
SM
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
5
10
15
20
25
30
1
10
100
t
Ifsm
TIME:t(s)
Rth-t CHARACTERISTICS
TR
AN
SIE
N
T
T
H
AE
R
M
AL

I
M
P
ED
AN
C
E
:
R
t
h

(
/
W
)
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA
IF=0.1A
300us
time
Mounted on epoxy board
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
F
O
R
W
A
R
D

C
U
RRE
N
T
:IF(
m
A
)
1
10
100
1000
0
100
200
300
400
500
600
Ta=-25
Ta=125
Ta=75
Ta=25
RE
V
E
R
S
E

C
U
RRE
N
T
:IR
(
u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
0.1
1
10
100
1000
10000
100000
0
10 20 30 40 50 60 70 80 90
Ta=-25
Ta=125
Ta=25
Ta=75
FO
RW
A
R
D

P
O
W
E
R
D
I
S
S
IPA
T
IO
N
:
P
f
(W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
0
0.1
0.2
0.3
0
0.1
0.2
0.3
0.4
0.5
DC
D=1/2
Sin(180)
PE
A
K
S
U
R
GE
RB021VA-90
Diodes
Rev.B
3/3

D
I
S
S
IP
ATIO
N
:
P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AV
ER
A
G
E
R
E
C
T
I
F
I
E
D
F
O
R
W
AR
D

C
U
R
R
E
N
T
:
I
o
(
A)
AV
ERAG
E

R
E
CTI
F
IE
D
FO
RW
A
R
D
C
U
R
R
E
N
T:I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
1
2
3
0
20
40
60
80
Sin(180)
DC
D=1/2
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
Sin(180)
DC
D=1/2
T
Tj=125
D=t/T
t
VR
Io
VR=45V
0A
0V
Sin(180)
DC
D=1/2
T
Tj=125
D=t/T
t
VR
Io
VR=45V
0A
0V


R
O
W
E
RS
E

P
RE
V
E




Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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