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Электронный компонент: RB205T-90

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RB205T-90
Diodes
Rev.C 1/3
Schottky barrier diode
RB205T-90

Applications External dimensions
(Unit : mm)
Structure
Switching power supply
ROHM : O220FN
Manufacture Date
1.2
1.3
0.8
(1) (2) (3)
10.00.3
0.1
5.
0
0.
2
8
.
0
0.
2
12
.
0
0
.
2
2.80.2
0.1
4.50.3
0.1
0.70.1
0.05
2.60.5
13.
5M
I
N
8.
0
15.
0
0.
4

0
.
2

Features
1) Cathode common type.
(TO-220)
2) Low I
R
3) High reliability

Construction
Silicon epitaxial planar








Absolute maximum ratings
(Ta=25
C)






Symbol
Unit
V
RM
V
V
R
V

Electrical characteristic
(Ta=25
C)


Io
A
Ave
15
I
FSM
A
Tj
Tstg
Limits
90
90
Parameter
everse voltage (repetitive peak)
everse voltage (DC)
*1)Tc=100max. Per chip : Io/2
-40 to +150
rage rectified forward current*1
ard current surge peak 60Hz1cyc*1
nction temperature
torage temperature
100
150
R
R
Forw
Ju
S
(
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.78
V
I
F
=7.5A
Reverse current
I
R
-
-
300
A
V
R
=90V
Thermal impedance
jc
-
-
2.0
/W
junction to case
Parameter
RB205T-90
Diodes
Rev.C 2/3
Electrical characteristic curves
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
Rth(j-a)
Rth(j-c)
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
ARD

CU
R
R
E
N
T:
I
F
(
A
)
RE
VE
RSE

CU
R
R
E
N
T:
I
R
(
u
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
C
I
TANC
E
BETW
EEN
TERM
INALS:
Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FO
RW
ARD

VO
LTAG
E:V
F
(
m
V
)
RE
VE
RSE

CU
R
R
E
N
T:
IR
(
u
A)
IR DISPERSION MAP
CA
P
A
C
I
TANC
E
BETW
EEN
TERM
INALS:
Ct(
p
F)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK S
UR
GE
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
SM
(
A
)
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK S
UR
GE
FOR
W
AR
D

C
U
RR
EN
T
:
I
F
SM
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
A
N
S
I
E
N
T
THAER
M
AL

I
MPED
ANCE:R
t
h
(
/
W
)
trr DISPERSION MAP
RE
SE
RVE

RE
C
O
VE
RY
T
IME
:
tr
r
(
n
s
)
0.01
0.1
1
10
0
100 200 300 400 500 600 700 800 900
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
40
50
60
70
80
90
Ta=-25
Ta=125
Ta=25
Ta=75
Ta=150
1
10
100
1000
0
10
20
30
f=1MHz
720
730
740
750
760
770
AVE:735.7mV
Ta=25
IF=7.5A
n=30pcs
0
20
40
60
80
100
120
140
160
180
200
Ta=25
VR=90V
n=30pcs
AVE:25.4uA
800
810
820
830
840
850
860
870
880
890
900
Ta=25
f=1MHz
VR=0V
n=10pcs
AVE:850.3pF
0
50
100
150
200
250
300
AVE:157.0A
8.3ms
Ifsm
1cyc
0
5
10
15
20
25
30
AVE:12.4ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
100
1000
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
10
100
1000
1
10
100
t
Ifsm
1ms
IM=100mA
IF=7.5A
300us
time
FO
RW
ARD

PO
WE
R
D
I
SSIP
A
TIO
N
:P
f(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Sin(180)
Ta=150
Ta=125
Ta=75
Ta=25
Ta=-25
DC
D=1/2














































RB205T-90
Diodes
Rev.C 3/3


RE
V
E
R
S
E

P
O
W
E
R
D
I
SSIP
A
T
I
ON:P
R
(W
)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AVER
A
GE
R
ECTIFIED
F
O
RW
AR
D C
U
RR
E
N
T
:
I
o
(
A
)
AV
E
R
AG
E
RECT
IFIED
FO
RW
ARD

C
U
RRE
N
T:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
ELECTR
OSTA
TIC
D
I
SC
HAR
G
E

TEST
E
SD
(
K
V)
ESD DISPERSION MAP
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
90
DC
D=1/2
Sin(180)
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
Sin(180)
DC
D=1/2
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:11.6kV
T
Tj=150
D=t/T
t
VR
Io
VR=45V
0A
0V
T Tj=150
D=t/T
t
VR
Io
VR=45V
0A
0V
Sin(180)
DC
D=1/2








Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.