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Электронный компонент: RB225T-60

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RB225T-60
Diodes
Rev.A 1/3
Schottky barrier diode
RB225T-60

Applications External dimensions
(Unit : mm)
Structure
Switching power supply
ROHM : O220FN
Manufacture Date
1.2
1.3
0.8
(1) (2) (3)
10.00.3
0.1
5.
0
0.
2
8
.
0
0.
2
12
.
0
0
.
2
2.80.2
0.1
4.50.3
0.1
0.70.1
0.05
2.60.5
13.
5M
I
N
8.
0
15.
0
0.
4

0
.
2

Features
1) Cathode common type.
(TO-220)
2) Low I
R
3) High reliability

Construction
Silicon epitaxial planar








Symbol
Unit
V
RM
V
V
R
60
R
V
Io
A
I
FSM
A
Tj
Tstg
Storage temperature
-40 to +150
(*1)Tc=100max Per chip : Io/2
Forward current surge peak 60Hz1cyc*1
100
Junction temperature
150
everse voltage (DC)
Average rectified forward current*1
30
Parameter
Limits
Reverse voltage (repetitive peak)
60
Absolute maximum ratings
(Ta=25
C)









Electrical characteristic
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Forward characteristics
V
F
-
-
0.63
V
I
F
=15A
Reverse characteristics
I
R
-
-
600
A
V
R
=60V
Thermal impedance
jc
-
-
1.75
/W
junction to case
Conditions
Parameter

RB225T-60
Diodes
Rev.A 2/3
Electrical characteristic curves
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
A
R
D

C
U
R
R
E
N
T:I
F
(
A
)
RE
V
E
RS
E

C
U
R
R
E
N
T:I
R
(
u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
C
I
T
A
N
C
E

B
E
T
W
EE
N
TE
R
M
I
N
A
L
S:
Ct(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0.01
0.1
1
10
100
0
100
200
300
400
500
600
700
Ta=150
Ta=125
Ta=-25
Ta=25
Ta=75
0.1
1
10
100
1000
10000
100000
1000000
0
10
20
30
40
50
60
Ta=150
Ta=25
Ta=-25
Ta=125
Ta=75
1
10
100
1000
10000
0
10
20
30
f=1MHz
VF DISPERSION MAP
F
O
RW
A
R
D

V
O
L
T
AG
E
:
VF
(
m
V)
RE
V
E
RS
E

C
U
R
R
E
N
T:I
R
(
u
A
)
IR DISPERSION MAP
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
TERM
IN
AL
S
:
Ct(
p
F
)
Ct DISPERSION MAP
1900
1950
2000
2050
2100
2150
2200
AVE:2030.9pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0
50
100
150
200
250
300
350
400
450










500
Ta=25
VR=60V
n=30pcs
AVE:70.1nA
550
560
570
580
590
600
AVE:580.0mV
Ta=25
IF=15A
n=30pcs
IFSM DISRESION MAP
PE
A
K
S
UR
GE
PE
A
K
S
U
R
GE
F
O
R
W
A
R
D

C
U
RRE
N
T
:IFS
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
RE
S
E
R
V
E

RE
C
O
V
E
RY

T
IM
E
:
t
rr(n
s
)











FO
RW
A
R
D
C
U
RR
E
N
T:I
F
S
M
(
A
)
0
50
100
150
200
250
300
AVE:176.0A
8.3ms
Ifsm
1cyc
0
5
10
15
20
25
30
AVE:23.3pF
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1
10
100
1000
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0.1
1
10
100
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
IF=10A
300us
time
FO
RW
A
R
D

C
U
RR
E
N
T:IFS
M
(A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
AN
S
I
EN
T
T
H
A
E
R
M
A
L

I
MPE
D
A
N
C
E
:
R
t
h
(
/
W
)
FO
RW
A
R
D

P
O
W
E
R
D
I
S
S
IPA
T
IO
N
:
P
f
(W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS











0
10
20
30
40
50
0
10
20
30
40
50
Sin(180)
DC
D=1/2
10
100
1000
1
10
100
t
Ifsm

E
PE
AK S
U
R
G










RB225T-60
Diodes
Rev.A 3/3




R
O
W
E
RSE

P
RE
VE



DI
SSIP
A
TIO
N
:P
R
(W
)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AVER
A
GE
R
ECTIFIED
F
O
RW
AR
D C
U
RR
E
N
T
:
I
o
(
A
)
AVER
A
GE
R
ECTI
F
I
ED
FO
RW
ARD

CU
R
R
E
N
T:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Sin(180)
D=1/2
DC
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
Sin(180)
D=1/2
DC
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
Sin(180)
D=1/2
DC
T
Tj=150
D=t/T
t
VR
Io
VR=30V
0A
0V
T
Tj=150
D=t/T
t
VR
Io
VR=30V
0A
0V
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:18.5kV
ELECTR
OSTA
TIC
D
I
SC
HAR
G
E

TEST
E
SD
(
K
V)
ESD DISPERSION MAP
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.