RB420D
Diodes
Schottky barrier diode
RB420D
!Applications
Low power rectification
!Features
1) Small surface mounting type. (SMD3)
2) Low I
R
. (I
R
=50nA Typ.)
3) High reliability
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions
(Units : mm)
2.80.2
1.6
0.3
0.6
0.15
0.4
0~0.1
1.1
0.80.1
2.90.2
1.90.2
0.95 0.95
+
0.2
-
0.1
+
0.2
-
0.1
+
0.1
-
0.06
+
0.1
-
0.05
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(All leads have the same dimensions)
D 3 B
!Absolute maximum ratings
(Ta=25
C)
60Hz for 1
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
40
V
DC reverse voltage
V
R
40
V
Mean rectifying current
I
O
0.1
A
Peak forward surge current
I
FSM
1
A
Junction temperature
125
C
Storage temperature
C
T
j
T
stg
-
40
+
125
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.45
V
I
F
=10mA
Reverse current
I
R
-
-
1
A
V
R
=10V
Capacitance between terminals
-
6.0
-
pF
V
R
=10V, f=1MHz
Note) ESD sensitive product handling required.
C
T
RB420D
Diodes
!Electrical characteristic curves
(Ta=25
C)
75
C
1
100m
10m
1m
100
10
Ta=125
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-
25
C
25
C
FORWARD CURRENT : I
O
(
A)
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
Ta=125C
1m
100
10
1
100n
10n
0
5
10
15
20
25
30
35
75C
25C
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
100
50
20
10
5
2
0
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig.3 Capacitance between
terminals characteristics
0
100
1m
10m
100m
1
10
20
PULSE WIDTH
I surge
Ta=25C
SURGE CURRENT : I surge (A)
PULSE WIDTH (sec)
Fig.4 Surge current characteristics
P=50%
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (C)
Fig.5 Derating curve
(mounting on glass epoxy PCBs)
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