RB715W
Diodes
Rev.B
1/3
Shottky barrier diode
RB715W
Application External dimensions (Unit : mm) Lead size figure (Unit : mm)
EMD3
1.0
0.
7
0.5
0.5
0.7
0.
7
0.6
0.6
1.
3
Low current rectification
Features
1) Ultra small mold type. (EMD3)
2) Low V
F
3) High reliability.
Construction
Structure
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.60.2
1.6
0.2
1.00.1
0.8
0
.1
0.5
0.5
(2)
(1)
0.150.05
0.70.1
0.550.1
0.1M
in
00.1
0.20.1
-0.05
0.30.1
0.05
Silicon epitaxial planer
Taping dimensions (Unit : mm)
4.00.1
2.00.05
1.550.1
0
3.
5
0.
05
1.
7
5
0
.
1
8.
0
0.
2
0.50.1
1.
8
0.
2
0.30.1
1.80.1
5.
5
0.
2
0.90.2
0
0.
1
Absolute maximum ratings (Ta=25
C)
Symbol
Unit
V
RM
V
V
R
V
Io
mA
I
FSM
mA
Tj
Tstg
Storage temperature
-40 to +125
(*1)Rating of per diode
Forward current surge peak (60Hz
1cyc) (*1)
200
Junction temperature
125
Reverse voltage (DC)
40
Average rectified forward current
30
Parameter
Limits
Reverse voltage (repetitive peak)
40
Electrical characteristics (Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
V
F
-
-
0.37
V
I
F
=1mA
I
R
-
-
1
A
V
R
=10V
Ct
-
2.0
-
pF
V
R
=1.0V f=1.0MHz
Conditions
Capacitance between terminals
t
Parameter
orward voltage
F
Reverse curren
RB715W
Diodes
Rev.B
2/3
Electrical characteristic curves (Ta=25
C)
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
A
R
D
C
U
RRE
N
T
:IF(
m
A
)
R
E
V
E
RS
E
C
U
RRE
N
T
:IR
(
u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
C
A
P
A
C
I
TA
N
C
E
B
E
TW
E
E
N
TE
RM
I
N
A
L
S
:
C
t
(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
F
O
RW
ARD
VO
L
T
AG
E
:
V
F
(
m
V
)
R
E
V
E
RS
E
C
U
RRE
N
T
:IR(n
A
)
IR DISPERSION MAP
CAPACIT
A
N
C
E
BE
T
W
E
E
N
TE
RM
I
N
A
L
S
:
C
t
(
p
F
)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEA
K
S
U
R
G
E
FO
R
W
A
R
D
C
U
RRE
N
T
:IFS
M
(
A
)
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
RR
E
N
T:IFS
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
RR
E
N
T:IFS
M
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRA
N
S
I
E
N
T
TH
AE
R
M
AL
I
M
P
ED
AN
CE
:
R
th
(
/
W
)
FO
RW
A
R
D
PO
W
E
R
D
I
S
S
I
P
A
T
I
O
N:P
f(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REV
E
RSE
P
O
W
E
R
D
I
S
S
IPA
T
IO
N
:
P
R
(W
)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0
500
1000
1500
Ta=125
Ta=75
Ta=25
Ta=-25
0.001
0.01
0.1
1
10
100
1000
0
10
20
30
Ta=125
Ta=75
Ta=25
Ta=-25
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm
1cyc
0
5
10
15
20
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1
10
100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00
0.01
0.02
0.03
0.04
0.05
Per diode
Sin(180)
D=1/2
DC
0
0.001
0.002
0.003
0
10
20
30
Per diode
Sin(180)
DC
D=1/2
0.1
1
10
0
10
20
30
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25
IF=1mA
n=30pcs
10
100
1000
10000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.083nA
Ta=25
VR=10V
n=30pcs
0
1
2
3
4
5
6
7
8
9
10
AVE:2.02pF
Ta=25
f=1MHz
VR=0V
n=10pcs
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