RB731U
Diodes
Schottky barrier diode
RB731U
!Applications
High speed switching.
!Features
1) Small surface mounting type. (SMD6)
2) Low V
F
and low I
R
.
3) Three diodes in parallel for easy installation.
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457
0.80.1
0.95 0.95
1.90.2
2.90.2
1.1
0.3
0.15
0
0.1
1.6
2.80.2
0.3
0.6
+
0.1
-
0.06
+
0.1
-
0.05
-
0.1
+
0.2
+
0.2
-
0.1
D 3 P
!Circuit
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
40
V
DC reverse voltage
V
R
40
V
Mean rectifying current
I
O
30
mA
Peak forward surge current
I
FSM
200
mA
Junction temperature
Tj
125
C
Storage temperature
Tstg
-
40
+
125
C
60 Hz for 1
!
!
!
!Electrical characteristics
(Ta=25
C)
Note) ESD sensitive product handling required.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.37
V
I
F
=1mA
Reverse current
I
R
-
-
1
A
V
R
=10V
Capacitance between terminals
-
2.0
-
pF
V
R
=1V, f=1MHz
C
T
RB731U
Diodes
!
!
!
!Electrical characteristic curves
(Ta=25
C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m
10m
100m
pulse measurement
1
10
100
Ta=125C
Ta=75C
Ta=25C
Ta=
-
25C
1000m
Typ.
FORWARD CURRENT : I
F
(
A)
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
0
Ta=125C
Ta=75C
Ta=25C
Ta=
-
25C
1n
10n
100n
1
10
100
5
10
15
20
25
30
35
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
0
2
4
6
8
10
12
14
1
2
5
10
20
50
100
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Capacitance between
terminals characteristics
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (C)
Fig.4 Derating curve
(mounting on glass epoxy PCBs)
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