RDN050N20
Transistors
1/3
Switching (200V, 5A)
RDN050N20
!
!
!
!
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
!
!
!
!
Application
Switching
!
!
!
!
Structure
Silicon N-channel
MOS FET
!
!
!
!
External dimensions (Units : mm)
(1) Gate
(2) Drain
(3) Source
TO-220FN
4.5
2.8
0.75
3.2
0.2
(2) (3)
(1)
0.8
2.54
0.5
2.6
0.5
2.54
0.5
1.3
1.2
14.0
0.5
12.0
0.2
8.0
0.2
5.0
0.2
10.0
+
0.3
-
0.1
+
0.3
-
0.1
+
0.2
-
0.1
+
0.1
-
0.05
15.0
+
0.4
-
0.2
!
!
!
!
Absolute maximum ratings (Ta=25
C)
1
1
2
2
Parameter
V
V
DSS
Symbol
200
V
V
GSS
30
A
I
D
5
A
I
DP
20
A
A
I
DR
5
A
I
DRP
20
mJ
I
AS
30
75
5
W
E
AS
150
C
C
P
D
T
ch
T
stg
-
55 to 150
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Total Power Dissipation (T
C
=
25
C)
Channel Temperature
Avalanche Current
Avalanche Energy
Storage Temperature
Continuous
Pulsed
Continuous
Pulsed
1 Pw
10
s, Duty cycle
1%
2 L
4.5mH, V
DD
=
50V, R
G
=
25
, 1Pulse, Tch
=
25
C
!
!
!
!
Equivalent Circuit
Gate
Protection
Diode
Drain
Gate
Source
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
RDN050N20
Transistors
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Max.
Typ.
Unit
Conditions
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Total Gate Charge
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
t
rr
Q
rr
Q
g
Min.
200
2.0
1.1
V
GS
=
30V, V
GS
=
0V
I
D
=
250
A, V
GS
=
0V
V
DS
=
200V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
2.5A, V
GS
=
10V
V
DS
=
10V, I
D
=
2.5A
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
2.5A, V
DD
100V
V
GS
=
10V
R
L
=
40
R
GS
=
10
I
DR
=
5A, V
GS
=
0V
di / dt
=
100A /
s
V
DD
=
100V, V
GS
=
10V, I
D
=
5A
0.55
1.8
292
92
28
10
22
23
28
117
0.37
9.3
A
V
A
V
S
pF
pF
pF
ns
ns
ns
ns
ns
C
nC
10
25
4.0
0.72
Static Drain-Source On-State
Resistance
!
!
!
!
Electrical characteristic curves
1
10
1000
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
Fig.1 Maximun Safe
Operating Area
100
s
1mS
Pw
=
10mS
DC Operation
T
C
=
25
C
Single Pulse
Operation in this
area is limited
by Ros(on)
0
20
18
16
14
12
10
8
6
4
2
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0
10
9
8
7
6
5
4
3
2
1
Fig.2 Typical Output Characteristics
DRAIN CURRENT : I
D
(A)
Ta
=
25
C
Pulsed
10V
9V
8V
7V
6V
5V
V
GS
=
4V
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : V
GS
(V)
0.01
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
Fig.3 Typical Transfer
Characteristics
V
DS
=
10V
Pulsed
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
= -
25
C
-50
-25
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : T
ch
(
C)
0
6.4
5.6
4.8
4
3.2
2.4
1.6
0.8
GATE THRESHOLD VOLTAGE :
V
GS (th)
(V
)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
V
DS
=
10V
I
D
=
1mA
V
GS
=
10V
Pulsed
0.01
0.1
1
10
1
10
10
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
5
10
15
20
25
30
GATE-SOURCE VOLTAGE : V
GS
(V)
0
2
1.75
1.5
1.25
1
0.75
0.5
0.25
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
I
D
=
5A
2.5A
RDN050N20
Transistors
3/3
-50
150
125
100
75
50
25
0
-25
CHANNEL TEMPERATURE : T
ch
(
C)
0
2.5
2
1.5
1
0.5
Fig.7 Static Drain-Source
On-State Resistance vs.
Channel Temperature
V
GS
=
10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
I
D
=
5A
2.5A
0.05
0.2
0.5
0.1
1
2
5
10
20
DRAIN CURRENT : I
D
(A)
0.05
FORWARD TRANSFER
ADMITTANCE :
Yfs
(S)
10
5
2
1
0.5
0.2
0.1
Fig.8 Forward Transfer Admittance
vs. Drain Current
V
DS
=
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
100
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
100
1000
DRAIN SOURCE VOLTAGE : V
DS
(V)
1
CAPACITANCE : C
(pF)
1000
100
10
f
=
1MHz
V
GS
=
0V
Ta
=
25
C
Pulsed
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
C
iss(pF)
C
iss(pF)
C
oss(pF)
0
14
12
10
8
6
4
2
TOTAL GATE CHARGE : Q
g
(nC)
0
200
180
160
140
120
100
0
20
10
80
60
40
20
Fig.11 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : I
DS
(V)
Ta
=
25
C
I
D
=
5A
Pulsed
V
DD
=
40V
V
DD
=
100V
V
DD
=
160V
V
DD
=
40V
V
DD
=
100V
V
DD
=
160V
V
DS
V
GS
GATE-SOURCE VOLTAGE : V
GS
(V)
0.1
1
10
1
100
1000
REVERSE DRAIN CURRENT : I
DR
(A)
REVERSE RECOVERY TIME : t
rr
(ns)
Fig.12 Reverse Recovery Time
vs. Reverse Drain Current
Ta
=
25
C
di / dt
=
100A /
s
V
GS
=
0V
Pulsed
0.1
1
10
1
10
100
1000
t
d (off)
t
d (on)
DRAIN CURRENT : I
D
(A)
SWITCHING TIME :
t (n
s
)
Fig.13 Switching Characteristcs
Ta
=
25
C
V
DD
=
100V
V
GS
=
10V
R
Q
=
10
Pulsed
t
r
t
r
10
10
1
100m
10m
1m
100
PULSE WIDTH : PW (S)
0.01
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r
(t)
1
10
0.1
Fig.14 Normalized Transient
Thermal Resistance vs.
Pulse Width
Tc
=
25
C
PW
PW
T
T
D
=
th(ch-c)
(t)
=
r(t)
=
th(ch-c)
th(ch-c)
=
4.17
C / W
D
=
1
0.02
0.01
0.05
0.1
0.2
0.5
Single pulse
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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