RDS070N03
Transistors
Switching (30V, 7A)
RDS070N03
Features
1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.
Structure
Silicon N-channel
MOS FET
Equivalent circuit
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(1) (2) (3)
(8) (7) (6) (5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(4)
Gate Protection Diode.
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
External dimensions (Units : mm)
ROHM : SOP8
Each lead has same dimensions
3.9
-
+
0.15
1.5
-
+
0.1
0.15
6.0
-
+
0.3
Max.1.75
0.5
-
+
0.1
5.0
-+
0.2
1.27
0.4
-+
0.1
0.1
0.2
-+
0.1
(1)
(4)
(8)
(5)
Absolute maximum ratings (Ta = 25
C)
30
20
7
28
7
28
1.6
6.4
2.5
150
-
55~
+
150
V
DSS
V
GSS
I
DR
P
D
Tch
V
V
A
A
W
C
I
D
I
DRP
A
I
DP
A
I
s
I
sp
A
A
Tstg
C
Symbol
Limits
Unit
Parameter
Pw
10
s, Duty cycle
1%
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Total Power Dissipation(Tc=25
C)
Channel Temperature
Storage Temperature
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
RDS070N03
Transistors
Thermal resistance (Ta = 25
C)
Rth(ch-A)
62.5
C/W
Symbol
Limits
Unit
Parameter
Channel to Ambient
Electrical characteristics (Ta = 25
C)
V
GS
=0V
f=1MHz
V
DS
=10V
V
GS
=10V
I
D
=3.5A, V
DD
15V
R
L
=4.3
R
GS
=10
A
pF
m
S
V
A
V
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
=15V
V
GS
=10V
I
D
=7A
I
D
=7A, V
GS
=10V
-
30
-
1.0
-
-
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
23
38
47
-
470
260
105
10
14
35
12
14
2
4
10
-
10
2.5
-
-
-
-
-
-
-
-
-
-
-
28
-
-
I
D
=7A, V
GS
=4.5V
I
D
=7A, V
GS
=4.0V
I
D
=7A, V
DS
=10V
I
D
=1mA, V
GS
=0V
V
GS
=
20V, V
DS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Unit
Min.
Typ.
Max.
I
GSS
I
DSS
l Y
fs
l
C
iss
Symbol
C
oss
C
rss
t
r
t
f
Q
gd
Q
gs
Q
g
V
(BR) DSS
V
GS(th)
R
DS(on)
t
d(on)
t
d(off)
Pulsed
Static Drain-Source On-State
Resistance
Body diode characteristics (Source-Drain characteristics) (Ta = 25
C)
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
V
Unit
ns
nC
-
-
-
Min.
-
46
46
Typ.
1.5
-
-
Max.
I
DR
=5.2A, V
GS
=0V
I
s
=6.4A, V
GS
=0V
di/dt=100A/
s
V
SD
t
rr
Q
rr
Symbol
Pulsed
RDS070N03
Transistors
Electrical characteristic curves
10
1
0.1
0.01
Fig.1 Reverse Drein Current
vs. Source-Drain Voltage
REVERSE DREIN CURRENT : I
DR
(A)
0.0
0.5
1.0
1.5
SOURCE - DRAIN VOLTAGE : V
GS
(V)
Ta=125
C
75
C
-
25
C
25
C
V
DS
=
0V
Pulsed
0.1
1
100
10
0.1
0.01
1
100
10
Pulsed
V
DS
=
10V
Ta=
-
25
C
25
C
75
C
125
C
0.01
DRAIN CURRENT : I
D
(A)
Fig.2 Forward Transfer Admittance
vs. Drain Current
FORWARD TRANSFER ADMITTANCE : I Y
fS
I
(S)
Pulsed
V
GS
=
4.5V
1
100
10
0.1
0.1
0.01
0.001
1
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta=125
C
75
C
-
25
C
25
C
Pulsed
V
GS
=
10V
1
100
10
0.1
0.1
0.01
0.001
1
Ta=125
C
75
C
-
25
C
25
C
DRAIN CURRENT : I
D
(A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0
-
25
50
75
100 125 150
STATIC
DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
CHANNEL TEMPERATURE : Tch
(
C)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
-
50
25
V
GS
=10V
Pulsed
I
D
=7V
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
0.08
0.06
0.04
0.02
0
0
10
5
15
20
GATE-SOURCE VOLTAGE : V
GS
(V)
ON-ST
A
TE RESIST
ANCE :
R
DS(on)
(
)
ST
A
TIC DRAIN-SOURCE
Ta=
25
C
Pulsed
I
D
=7A
I
D
=3.5A
25
50
4
3
2
1
0
-
25
0
-
50
75
100 125 150
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
CHANNEL TEMPERATURE : Tch (
C)
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
V
DS
=
10V
I
D
=
1mA
Pulsed
1000
100
10
0.1
1
10
100
Ta=25
C
f=1MHz
V
GS
=0V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
CAPACITANCE : C
(pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
C
iss
C
oss
C
rss
0
2
6
4
8
10
12
14
Ta=25
C
I
D
=7A
Pulsed
V
DS
=24V
V
DS
=15V
V
DS
=24V
V
DS
=15V
V
DS
=10V
V
DS
=10V
0
10
20
30
25
15
5
0
2
8
10
12
6
4
TOTAL GATE CHARGE : Qg (
nC)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.9 Dynamic Input Characteristics
RDS070N03
Transistors
1
10
100
10000
1000
0.01
0.1
10
1
SWITCHING TIME : t
(ns)
DRAIN CURRENT : I
D
(A)
Fig.10 Switching Characteristics
Ta=25
C
V
DD
15V
V
GS
=10V
R
G
=10
Pulsed
t
f
t
d(off)
t
r
t
d(on)
5
4
3
2
1
10
5
0
0
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.11 Typical Output Characteristics
DRAIN CURRENT : I
D
(A)
3.0V
3.5V
5.0V
4.5V
4.0V
6.0V
10V
V
GS
=2.5V
Ta=25
C
Pulsed
NORMALIZED TRANSIENT
THERMAL RESISTANCE
: r
(t)
PULSE WIDTH : PW
(s)
Fig.12 Normalized Transient Thermal
Resistance vs. Pulse Width
10
100
1m
10m
100m
1
10
100
10
1
0.1
0.01
0.001
D=0.02
D=Single
D=0.01
D=0.05
D=0.1
D=1
D=0.2
D=0.5
T
Tc=25
C
th(ch-c)
(t)=r(t)
th(ch-c)
th(ch-c)
=6.25
C / W
PW
D=PW
T
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