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Электронный компонент: RF101A2S

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RF101A2S
Diodes
1/3
Fast recovery diode
RF101A2S

Applications External dimensions (Unit : mm)
General rectification
291
291
3.00.2
0.60.1
2.50.2
CATHODEBAND
ROHM : MSR
Manufacture Date
7
(GREEN)

Features
1) Cylindrical mold type. (MSR)
2) Ultra Low V
F.
3) Ultra high switching.
4) Low switching loss.
5) High ESD.

Taping specifications (Unit : mm)
Construction
T-31 52.41.5
5.00.5
0.5
0
50.40.4
0.3
H1
6.00.5
H2
5.00.5
L1-L2
0.6
H1(6mm)BROWN
)201.5mm
(mm)
T-32 26.0+0.4
-0
A
H2
H2
E
B
C
L2
L1
F
D
H1
H1
IVORY
BLUE
cf : cumulative pitch tolerance w ith 20 pitch than 1.5mm
Mark
Stabdard dimension
value (mm)
Silicon epitaxial planar













Absolute maximum ratings (Ta=25
C)
Symbol
Unit
V
R
200
R

A
For
Junct
S

(
RM
V
V
R
V
Io
A
ward current surge peak
t=100s
I
FSM
A
Tj
Tstg
-55 to +150
Parameter
everse voltage (DC)
everse voltage (repetitive peak)
200
Limits
verage rectified forward current (*1)
1
20
150
ion temperature
*1) Mounted on epoxy board. 180Half sine wave
torage temperature
Electrical characteristic (Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
V
F
-
0.815
0.87
V
I
F
=1.0A

Reverse current
I
R
-
0.01
10
A
V
R
=200V
Reverse recovery time
trr
-
12
25
ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Parameter
orward voltage
Conditions
F
RF101A2S
Diodes
2/3
Electrical characteristic curves


)








FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
R
W
A
R
D

C
U
RR
E
N
T
:
I
F
(A

























)








RE
V
E
RS
E

CU
RRE
N
T
:
I
R(
n
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CAP
A
CIT
A
N
C
E
BET
W
E
E
N
T
E
RM
I
N
A
L
S
:
C
t
(p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
F
O
R
W
AR
D

VO
L
T
AG
E
:
VF
(
m
V)
R
E
V
E
RS
E

C
U
RRE
N
T
:
I
R(
n
A
)
IR DISPERSION MAP
CAP
A
C
I
T
A
N
C
E
B
E
TW
EEN
TE
RM
IN
AL
S
:
Ct
(
p
F
)
Ct DISPERSION MAP
IFSM DISRESION MAP
PE
A
K
S
U
R
GE
F
O
RW
A
R
D

CU
RRE
N
T
:
I
F
S
M
(
A
)
PE
A
K
S
U
R
G
E
FO
RW
A
R
D

C
U
RRE
N
T
:
I
F
S
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K
S
U
R
G
E
FO
R
W
A
R
D

C
U
RR
E
N
T
:
I
F
S
M
(A
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
AN
SI
E
N
T
T
H
AER
M
AL

I
M
P
E
D
AN
C
E
:
R
th

(
/
W
)
trr DISPERSION MAP
RE
S
E
RVE

RE
C
O
V
E
RY
T
I
M
E
:
trr
(
n
s
)
f=1MHz
0.001
0.01
0.1
1
0
100 200 300 400 500 600 700 800 900
Ta=25
Ta=-25
Ta=150
Ta=125
Ta=75
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
Ta=150
Ta=25
Ta=-25
Ta=75
Ta=125
1
10
100
0
5
10
15
20
25
30
f=1MHz
0
10
20
30
40
50
60
70
80
90
100
AVE:51.4pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25
VR=200V
n=30pcs
AVE:11.1nA
0
50
100
150
200
AVE:63.0A
8.3ms
Ifsm
1cyc
0
5
10
15
20
25
30
AVE:12.2ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1
10
100
1000
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
10
100
1000
1
10
100
t
Ifsm
800
810
820
830
840
850
AVE:818.6mV
Ta=25
IF=1A
n=30pcs
FORW
A
R
D PO
W
E
R
D
I
SSI
P
A
T
I
O
N
:
P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
0
0.5
1
1.5
2
0
0.5
1
1.5
2
Sin(180)
D=1/2
DC
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
time(s)
IF=0.5A
td=300us
IM=1mA
Mounted on epoxy board

RF101A2S
Diodes
3/3











AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AVE
R
A
G
E

R
E
C
T
I
F
I
E
D
FO
RW
A
R
D

C
U
RR
EN
T
:
I
o
(
A
)
AVE
R
A
G
E

R
E
C
T
I
F
I
E
D
FO
RW
A
R
D

C
U
RR
EN
T
:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
1
2
3
0
25
50
75
100
125
150
T
D=t/
t
V
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
DC
D=1/2
Sin(180)
0
1
2
3
0
25
50
75
100
125
150
T
t
0
0
T
Tj=150
D=t/T
t
VR
Io
VR=100V
0A
0V
DC
D=1/2
Sin(180)
EL
EC
T
R
O
S
T
A
T
I
C
D
I
S
C
H
A
R
G
E

TE
ST
E
SD
(
K
V)
ESD DISPERSION MAP
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:22.6kV
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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