ChipFind - документация

Электронный компонент: RF103L2S

Скачать:  PDF   ZIP
www.docs.chipfind.ru
background image
RF103L2S
Diodes
1/2
Fast recovery Diode
RF103L2S

!
!
!
!
Applications
High frequency rectification

!
!
!
!
Features
1) Small power mold type (PMDS)
2) Ultra low VF
3) Very fast recovery
4) Low switching loss

!
!
!
!
Construction
Silicon epitaxial planar



!
!
!
!
External dimensions (Unit : mm)
0.1
CATHODE MARK
4.5
0.2
2.6
0.2
2.0
0.2
1.2
0.3
1.5
0.2
5.0
0.3
+
0.02
-
0.1
EX. RF101L2S
6 , 6
EX. 2003,09
3 , 9
1
2
3
4
, Type No.
1
2
, Manufacturing date
3
4

!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V
RM
200
V
Reverse voltage (DC)
V
R
200
V
Average rectified forward current
I
O
1.0
A
I
FSM
20
A
Junction temperature
150
C
Storage temperature
-
40 to
+
150
C
Mounting on glass epoxi board
Tj
Tstg
Forward Peak surge current (60Hz 1cyc.)

!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Max.
Unit
Conditions
Forward voltage
V
F
0.920
V
I
F
=
1.0A
Reverse current
I
R
10
A
V
R
=
200V
Reverse recovery time
I
F
=0.5A
I
R
=1.0A
Irr=0.25
IR
trr
Typ.
0.860
1.2
9
20
nS
+




background image
RF103L2S
Diodes
2/2
!
!
!
!
Electrical characteristic curves (Ta=25
C)
0
0.2
0.4
0.6
0.8
1
1
0.1
0.01
0.001
125
C
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
75
C
25
C
-
25
C
Fig.1 Forward temperature
characteristics
0
1000
100
10
1
0.1
0.01
50
100
150
200
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(
A)
125
C
75
C
25
C
-
25
C
Fig.2 Reverse temperature
characteristics
0
0
2.0
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.4
0.2
25
75
125
50
100
150
AVERAGE RECTIFIED CURRENT : I
O
(A)
AMBIENT TEMPERATURE : Ta (
C)
DC
D=1/2
Sin(
=180)
T
t
I
O
0A
0V
V
R
D=t / T
V
R
=200V
Tj=150
C
Fig.3 Derating curve

0.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD POWER DISSIPATION : P
F
(W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
DC
D=1/2
Sin(
=180)
Fig. 4 Power dissipation
characteristics
0
20
25
15
10
5
1
10
100
CYCLE
SURGE FORWARD CURRENT : I
FSM
(A)
8.3ms 8.3ms
1cycle
sin wave
I
FSM
Fig.5 Powerd peak surge current
0
5
10
15
20
25
30
100
10
0
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
REVERSE VOLTAGE : V
R
(V)
Fig. 6 Capacirance between terminals
characteristics



background image
Appendix
Appendix1-Rev1.0


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.