RLS245
Diodes
Switching diode
RLS245
!Applications
High voltage switching
General purpose rectification
!Features
1) Small surface mounting type. (LLDS)
2) V
RM
=250V guaranteed.
3) High reliability
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
-
0.1
+0.2
1.5Max.
1.40.1
0.4
0.4
3.4
CATHODE BAND (WHITE)
EIAJ :
-
JEDEC : LL-34
ROHM : LLDS
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
250
V
DC reverse voltage
V
R
220
V
I
FM
625
mA
Mean rectifying current
I
O
200
mA
Isurge
1000
mA
Power dissipation
300
mW
Junction temperature
175
C
Storage temperature
C
Surge current (1s)
Peak forward current
Tj
Tstg
P
-
65~
+
175
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
1.5
V
I
F
=200mA
Reverse current
I
R
-
-
10
A
V
R
=220V
Capacitance between terminals
-
-
3
pF
V
R
=0V, f=1MHz
Reverse recovery time
t
rr
-
-
75
ns
I
F
=20mA, I
R
=20mA, R
L
=50
Typ.
C
T
RLS245
Diodes
!
!
!
!Electrical characteristic curves
(Ta=25
C)
0
75
C
25C
-
25C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.2
0.5
1
2
5
10
20
50
100
200
Ta=125C
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
0
100C
75C
50C
Ta=25C
50
100
150
200
250
300
350
10n
100n
1
10
REVERSE CURRENT : I
R
(A)
1.1
1.0
0.9
0.8
0.7
0.6
0
1
2
3
4
5
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
Fig. 3 Capacitance between
terminals characteristics
0
I
R
=10mA
140
120
100
80
60
40
20
0
5
10
15
20
25
30
35
I
rr
=1mA
REVERSE RECOVERY TIME : t
rr
(ns)
FORWARD CURRENT : I
F
(mA)
Fig. 4 Reverse recovery time
characteristics
Fig.5 Surge current characteristics
14
12
10
8
6
4
2
0
1
10
100
1000
SURGE CURRENT : Isurge
(A)
PULSE WIDTH : Tw (ms)
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0.01
F
D.U.T.
5k
Fig. 6 Reverse recovery time (t
rr
) measurement circuit
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