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SP8M6
Transistors
Rev.A
1/5
Switching
SP8M6
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
External dimensions (Unit : mm)
SOP8
Each lead has same dimensions
5.0
0.2
0.2
0.1
6.0
0.3
3.9
0.15
0.5
0.1
(1
)
(4
)
(8
)
(5
)
Max.1.75
1.27
0.15
0.4
0.1
1.5
0.1
0.1
Absolute maximum ratings (Ta=25
C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
A
I
D
A
I
DP
A
I
S
A
I
SP
W
P
D
C
Tch
C
Tstg
Nchannel
Pchannel
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
20
5.0
20
1.6
20
2
150
-
55 to
+
150
-
30
-
20
3.5
14
-
1.6
-
14
1 Pw
10
s, Duty cycle
1%
2 MOUNTED ON A CERAMIC BOARD.
1
1
2
Equivalent circuit
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
2
1
(8)
(7)
(1)
(2)
2
1
(6)
(5)
(3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance (Ta=25
C)
C / W
Rth (ch-a)
62.5
Parameter
Symbol
Limits
Unit
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
SP8M6
Transistors
Rev.A
2/5
N-ch
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
Typ.
Max.
Unit
Conditions
V
(BR) DSS
30
-
-
V
I
DSS
-
-
1
A
V
GS (th)
1.0
-
2.5
V
-
36
51
R
DS (on)
-
52
73
m
-
58
82
3.0
-
-
S
C
iss
-
230
-
pF
C
oss
-
80
50
-
pF
C
rss
-
6
-
pF
t
d (on)
-
8
-
ns
t
r
-
22
-
ns
t
d (off)
-
5
-
ns
t
f
-
3.9
-
ns
Q
g
-
1.1
5.5
nC
Q
gs
-
1.4
-
nC
Q
gd
-
-
nC
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
V
GS
=
20V, V
DS
=
0V
V
DD
15V
I
D
=
1mA, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
5.0A, V
GS
=
10V
I
D
=
5.0A, V
GS
=
4.5V
I
D
=
5.0A, V
GS
=
4V
I
D
=
5.0A, V
DS
=
10V
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
V
GS
=
10V
R
L
=
6.0
R
G
=
10
V
GS
=
5V
I
D
=
5.0A
I
D
=
2.5A, V
DD
15V
Body diode characteristics (Source-Drain Characteristics) (Ta=25
C)
V
SD
-
-
1.2
V
I
S
=
6.4A, V
GS
=
0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
Pulsed
SP8M6
Transistors
Rev.A
3/5
P-ch
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
Typ.
Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
-
-
10
A
-
30
-
-
V
-
-
-
1
A
-
1.0
-
-
2.5
V
-
65
90
-
100
140
m
-
120
165
1.8
-
-
S
-
490
-
pF
-
110
75
-
pF
-
10
-
pF
-
15
-
ns
-
35
-
ns
-
10
-
ns
-
5.5
-
ns
-
1.5
-
nC
-
2.0
-
nC
-
-
nC
V
GS
= -
20V, V
DS
=
0V
V
DD
-
15V
I
D
= -
1mA, V
GS
=
0V
V
DS
= -
30V, V
GS
=
0V
V
DS
= -
10V, I
D
= -
1mA
I
D
= -
3.5A, V
GS
= -
10V
I
D
= -
1.75A, V
GS
= -
4.5V
I
D
= -
1.75A, V
GS
= -
4.0V
I
D
= -
1.75A, V
DS
= -
10V
V
DS
= -
10V
V
GS
=
0V
f
=
1MHz
V
GS
= -
10V
R
L
=
8.6
R
G
=
10
V
GS
= -
5V
I
D
= -
3.5A
I
D
= -
1.75A, V
DD
-
15V
Body diode characteristics (Source-Drain Characteristics) (Ta=25
C)
V
SD
-
-
-
1.2
V
I
S
= -
1.0A, V
GS
=
0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
Pulsed
SP8M6
Transistors
Rev.A
4/5
N-ch
Electrical characteristic curves
100
1000
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta
=
25
C
V
DD
=
15V
V
GS
=
10V
R
G
=
10
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0
1
2
3
4
5
6
7
8
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta
=
25
C
V
DD
=
15V
I
D
=
5A
R
G
=
10
Pulsed
Fig.3 Dynamic Input Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
DS
=
10V
Pulsed
0
2
4
6
8
10
12
14
1
GATE-SOURCE VOLTAGE : V
GS
(V)
0
50
100
150
200
250
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
6
Ta
=
25
C
Pulsed
I
D
=
5A
I
D
=
2.5A
0.01
0.1
1
10
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
10V
Pulsed
0.1
1
10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
0.1
1
10
V
GS
=
4V
Pulsed
1
10
100
1000
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
SP8M6
Transistors
Rev.A
5/5
P-ch
Electrical characteristic curves
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
100
1000
10000
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
CAPACITANCE : C
(pF)
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
C
iss
C
rss
C
oss
Fig.2 Switching Characteristics
1
10
100
1000
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
SWITCHING TIME : t
(ns)
Ta
=
25
C
V
DD
= -
15V
V
GS
= -
10V
R
G
=
10
Pulsed
t
d (off)
t
d (on)
t
r
t
f
Fig.3 Dynamic Input Characteristics
Ta
=
25
C
V
DD
= -
15V
I
D
= -
3.5A
R
G
=
10
Pulsed
0
1
2
3
4
5
6
7
8
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.4 Typical Transfer Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
DS
= -
10V
Pulsed
0
2
4
6
8
10
12
14
1
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0
50
100
150
200
250
300
350
400
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
6
Ta
=
25
C
Pulsed
I
D
=-
3.5A
I
D
=-
1.75A
Fig.6 Source Current vs.
Source-Drain Voltage
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT :
-
I
S
(A)
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
V
GS
= -
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
0.1
1
10
10
100
1000
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
0.1
1
10
10
100
1000
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
V
GS
= -
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
0.1
1
10
10
100
1000
V
GS
= -
4V
Pulsed
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
m
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
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