194
Transistor
Small switching (30V, 0.1A)
UM6K1N
F
Features
1) Two 2SK3018 transistors in a single
UMT package.
2) The MOSFET elements are inde-
pendent, eliminating interference.
3) Mounting cost and area can be cut
in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this
device ideal for portable equipment.
F
Applications
Interfacing, switching (30V, 100mA)
F
Structure
Silicon N-channel
MOSFET
F
Absolute maximum ratings (Ta = 25
_
C)
F
External dimensions (Units: mm)
F
Equivalent circuit
F
Packaging specifications
195
Transistor
UM6K1N
F
Electrical characteristics (Ta = 25
_
C)
F
Electrical characteristic curves
Fig.1
Typical output characteristics
Fig.2
Typical transfer characteristics
Fig.3
Gate threshold
voltage vs. channel
temperature
196
Transistor
UM6K1N
Fig.6
Static drain-source on-state
resistance vs. gate-source
voltage
Fig.7
Static drain-source on-state
resistance vs. channel
temperature
Fig.8
Forward transfer
admittance vs. drain current
Fig.11
Typical capacitance vs.
drain-source voltage
Fig.12
Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
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