EMF20/UMF20N
Transistors
1/4
Power management (dual transistors)
EMF20/UMF20N
2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package.
Application
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Equivalent circuits
R
1
R
2
DTr2
Tr1
(1)
(2)
(3)
(4)
(5)
(6)
R1=47k
R2=47k
External dimensions (Units : mm)
ROHM : EMT6
EMF20
ROHM : UMT6
EIAJ : SC-88
UMF20N
Abbreviated symbol :F20
Abbreviated symbol : F20
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
Each lead has same dimensions
0
0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Package, marking, and packaging specifications
Type
EMF20
EMT6
F20
T2R
8000
Package
Marking
Code
Basic ordering unit (pieces)
UMF20N
UMT6
F20
TR
3000
EMF20/UMF20N
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
Limits
Unit
V
CBO
60
V
50
V
V
V
CEO
V
EBO
7
I
C
mA
150
Tj
150
Tstg
-
55 to
+
150
P
C
150 (TOTAL)
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
120mW per element must not be exceeded.
C
C
DTr2
Parameter
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
V
CC
V
IN
I
C
I
O
P
C
Tj
Tstg
Limits
50
-
10~
+
40
100
30
150(TOTAL)
150
-
55 to
+
150
1
2
Unit
V
V
mA
mA
mW
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
C
C
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
-
-
180
-
-
-
-
-
-
-
-
-
2
-
-
-
0.1
0.1
390
0.4
3.5
V
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
V
A
A
-
V
PF
Typ. Max. Unit
Conditions
f
T
-
180
-
V
CE
=12V, I
E
=
-
2mA, f
=100MHz
V
CB
=12V, I
E
=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
f
T
-
250
-
MHz
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
Characteristics of built-in transistor.
V
I(off)
-
-
0.5
V
V
CC
=
5V, I
O
=
100
A
Input voltage
V
I(on)
3.0
-
-
V
V
O
=
0.3V, I
O
=
2mA
V
O(on)
-
100
300
mV
V
O
=
10mA, I
I
=
0.5mA
Output voltage
I
I
-
-
180
A
V
I
=
5V
Input current
I
O(off)
-
-
500
nA
V
CC
=
50V, V
I
=
0V
Output current
R
1
32.9
47
61.1
k
-
Input resistance
G
I
20
-
-
-
V
O
=
5V, I
O
=
5mA
DC current gain
-
R
2
/R
1
0.8
1.0
1.2
-
Resistance ratio
EMF20/UMF20N
Transistors
3/4
Electrical characteristic curves
Tr1
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
V
CE
=
6V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
25C
-
55C
Ta=100C
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25C
I
B
=0A
0.40mA
0.50mA
0.45mA
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3
A
6
A
9
A
12
A
15
A
18
A
21
A
24
A
27
A
30
A
Fig.3 Grounded emitter output
characteristics ( II )
0.2
20
10
0.5
1
2
5
10 20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.2
0.5
1
2
5
10 20
50 100 200
20
10
50
100
200
500
25C
-
55C
Ta=100C
V
CE
=
5V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( II )
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.02
0.05
0.1
0.2
0.5
I
C
/I
B
=50
20
10
Ta=25C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=50
20
10
Ta=25C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100C
25C
-
55C
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100C
25C
-
55C
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
EMF20/UMF20N
Transistors
4/4
50
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
100
200
500
Ta=25C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.10 Gain bandwidth product vs.
emitter current
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25C
f
=1MHz
I
E
=0A
I
C
=0A
-
0.2
-
0.5
-
1
-
2
-
5
-
10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.12 Base-collector time constant vs.
emitter current
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
Ta=25
C
f=32MH
Z
V
CB
=6V
DTr2
V
O
=
0.3V
100
200
500
1m
2m
5m 10m 20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.9 Input voltage vs. output current
(ON characteristics)
25
C
100
C
Ta
=-
40
C
V
CC
=
5V
0.5
1.0
1.5
2.0
2.5
3.0
0
10m
5m
2m
1m
500
200
100
50
20
10
5
1
2
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
Fig.10 Output current vs. input voltage
(OFF characteristics)
Ta
=
100
C
25
C
-
40
C
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
V
O
=
5V
100
200
500
1m
2m
5m 10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
Fig.11 DC current gain vs. output
current
Ta
=
100
C
25
C
-
40
C
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=
20
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.12 Output voltage vs. output
current
Ta
=
100
C
25
C
-
40
C
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
PDF 
ZIP