EMF21 / UMF21N
Transistors
1/4
Power management (dual transistors)
EMF21 / UMF21N
2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.
Application
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Equivalent circuits
R
1
R
2
DTr2
Tr1
(1)
(2)
(3)
(4)
(5)
(6)
R
1
=10k
R
2
=10k
External dimensions (Units : mm)
ROHM : EMT6
EMF21
ROHM : UMT6
EIAJ : SC-88
UMF21N
Abbreviated symbol :F21
Abbreviated symbol : F21
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0 to 0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
Package, marking, and packaging specifications
Type
UMF21N
UMT6
F21
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
EMF21
EMT6
F21
T2R
8000
EMF21 / UMF21N
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
1 Single pulse P
W
=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
15
-
12
-
6
-
500
150(TOTAL)
150
-
55~
+
150
-
1.0
1
2
Unit
V
V
V
mA
A
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DTr2
Parameter
1 Characteristics of built-in transistor.
2 Each terminal mounted on a recommended land.
Symbol
V
CC
V
IN
I
C
I
O
P
C
Tj
Tstg
Limits
50
-
10~
+
40
100
50
150(TOTAL)
150
-
55~
+
150
1
2
Unit
V
V
mA
mA
mW
C
C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
f
T
-
260
-
MHz
V
CE
=-
2V, I
E
=
10mA, f
=
100MHz
BV
CEO
-
12
-
-
V
I
C
=-
1mA
Collector-emitter breakdown voltage
BV
CBO
-
15
-
-
V
I
C
=-
10
A
Collector-base breakdown voltage
BV
EBO
-
6
-
-
V
I
E
=-
10
A
Emitter-base breakdown voltage
I
CBO
-
-
-
100
nA
V
CB
=-
15V
Collector cut-off current
I
EBO
-
-
-
100
nA
V
EB
=-
6V
Emitter cut-off current
V
CE(sat)
-
-
100
-
250
mV
I
C
=-
200mA, I
B
=-
10mA
Collector-emitter saturation voltage
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
10mA
DC current gain
Cob
-
6.5
-
pF
Collector output capacitance
DTr2
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
-
3
-
-
-
7
30
0.8
-
-
-
0.1
-
-
10
-
1
250
0.5
-
0.3
0.88
0.5
13
-
1.2
-
V
V
CC
=
5V, I
O
=
100
A
V
O
=
0.3V, I
O
=
10mA
I
O
/I
I
=
10mA/0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
5mA
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
V
mA
A
k
-
-
-
-
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Transition frequency of the device
EMF21 / UMF21N
Transistors
3/4
Electrical characteristic curves
Tr1
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=2V
Pulsed
Ta=125
C
Ta=25
C
Ta=
-
40
C
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2
DC current gain vs.
collector current
1
DC CURRENT GAIN : h
FE
10
1000
100
Ta
=
125
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.3
Collector-emitter saturation voltage
vs. collector current (
)
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
10
1000
100
Ta=25
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.4
Collector-emitter saturation voltage
vs. collector current (
)
1
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
10
1000
100
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.5
Base-emitter saturation voltage
vs. collector current
10
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
100
10000
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
Fig.6
Gain bandwidth product
vs. emitter current
1
TRANSITION FREQUENCY : f
T
(MHz)
10
1000
100
V
CE
=
2V
Ta
=
25
C
Pulsed
1
10
100
0.1
1
10
100
1000
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
EMF21 / UMF21N
Transistors
4/4
DTr2
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
100
200
500
1m
2m
5m 10m 20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=
0.3V
Ta
=-
40
C
25
C
100
C
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
0
3.0
10m
1
2m
5m
1m
200
500
100
20
50
10
2
5
0.5
1.0
1.5
2.0
2.5
V
CC
=
5V
Ta
=
100
C
25
C
-
40
C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
100
200
500
1m
2m
5m 10m 20m 50m100m
1k
500
200
100
50
20
10
5
2
1
V
O
=
5V
Ta
=
100
C
25
C
-
40
C
Fig.3 DC current gain vs. output
current
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=
20
Ta
=
100
C
25
C
-
40
C
Fig.4 Output voltage vs. output
current
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