UML4N
Transistors
Rev.A
1/3
General purpose transistor
(isolated transistor and diode)
UML4N
A 2SA2018 and a RB521S-30 are housed independently in a UMT package.
Applications
DC / DC converter
Motor driver
Features
1) Tr : Low V
CE
(sat)
Di : Low V
F
2) Small package
Structure
Silicon epitaxial planar transistor
Schottky barrier diode
Equivalent circuit
Tr2
Di1
(1)
(2)
(3)
(4)
(5)
Packaging specifications
Type
UML4N
UMT5
L4
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
External dimensions (Unit : mm)
UML4N
ROHM : UMT5
EIAJ : SC-88A
0.9
0.15
0
~
0.1
0.1Min.
0.7
2.1
1.3
0.65
2.0
( 4
)
( 1
)
( 5
)
0.2
1.25
( 2
)
0.65
( 3
)
Each lead has same dimensions
UML4N
Transistors
Rev.A
2/3
Absolute maximum ratings (Ta=25
C)
Di1
Parameter
Symbol
I
O
I
FSM
V
R
Tj
Tstg
Limits
200
1
30
125
-
55 to
+
125
Unit
mA
A
V
C
C
Average rectified forward current
Forward current surge peak (60H
Z
,
1
)
Reverse voltage (DC)
Junction temperature
Range of storage temperature
Tr2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
-
15
-
12
-
6
-
500
120
150
-
55 to
+
125
-
1
Unit
V
V
V
mA
A
mW
C
C
Each terminal mounted on a recommended land.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25
C)
Di1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
-
0.50
V
R
0.40
V
I
F
=200mA
V
R
=10V
Forward voltage
I
R
-
4.0
30
A
Reverse current
Tr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0mA, f
=
1MHz
f
T
-
260
-
MHz
V
CE
=-
2V, I
E
=
10mA, f
=
100MHz
BV
CEO
-
12
-
-
V
I
C
=-
1mA
BV
CBO
-
15
-
-
V
I
C
=-
10
A
BV
EBO
-
6
-
-
V
I
E
=-
10
A
I
CBO
-
-
-
100
nA
V
CB
=-
15V
I
EBO
-
-
-
100
nA
V
EB
=-
6V
V
CE(sat)
-
-
100
-
250
mV
I
C
=-
200mA, I
B
=-
10mA
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
10mA
Cob
-
6.5
-
pF
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Electrical characteristic curves
Di1
1
10
100
1m
10m
100m
1
FOR
W
ARD CURRENT :
I
F
(A)
FORWARD VOLTAGE : V
F
(V)
0
0.1
0.2
0.3
0.4
0.5
0.6
C
5
2
1
=
a
T
C
5
7
C
5
2
C
5
2
-
Fig.1 Forward characteristics
10n
100n
1
10
100
1m
10m
REVERSE CURRENT :
I
R
(A)
REVERSE VOLTAGE : V
R
(V)
0
10
20
30
Ta
=
125
C
75
C
25
C
-
25
C
Fig.2 Reverse characteristics
UML4N
Transistors
Rev.A
3/3
Tr2
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=2V
Pulsed
Ta=125
C
Ta=25
C
Ta=
-
40
C
Fig.3 Grounded emitter propagation
characteristics
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
DC CURRENT GAIN : h
FE
10
1000
100
Ta
=
125
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
Fig.4
DC current gain vs.
collector current
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
10
1000
100
Ta=25
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
Fig.5
Collector-emitter saturation voltage
vs. collector current (
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
10
1000
100
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
Fig.6
Collector-emitter saturation voltage
vs. collector current (
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
10
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
100
10000
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
Fig.7
Base-emitter saturation voltage
vs. collector current
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
1
TRANSITION FREQUENCY : f
T
(MHz)
10
1000
100
V
CE
=
2V
Ta
=
25
C
Pulsed
Fig.8
Gain bandwidth product
vs. emitter current
1
10
100
0.1
1
10
100
1000
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cib
Cob
Fig.9
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
0.1
1
10
100
EMITTER CURRENT : V
CE
(V)
0.001
TRANSITION FREQUENCY : I
C
(A)
0.01
10
0.1
1
Ta
=
25
C
Single Pulsed
DC
100ms
10ms
1ms
Fig.10
Safe operation area
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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