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Электронный компонент: UMT18N

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EMT18 / UMT18N / IMT18
Transistors
Rev.A 1/3
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18

Features
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.

Structure
Epitaxial planar type
NPN silicon transistor


The following characteristics apply to both Tr
1
and Tr
2
.

Equivalent circuit
(3)
(4)
(2)
(5)
(1)
(6)
Tr
2
Tr
2
Tr
1
Tr
1
EMT18 / UMT18N
(4)
(3)
(5)
(2)
(6)
(1)
IMT18
External dimensions (Unit : mm)
ROHM :
EMT6
Each lead has same dimensions
Abbreviated symbol :
T18
EMT18
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
Abbreviated symbol :
T18
IMT18
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Abbreviated symbol :
T18
UMT18N
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Power dissipation
Storage temperature
Emitter-base voltage
Collector current
Junction temperature
1 Single pulse P
W
=
1ms
2 120mW per element must not be exceeded.
3 200mW per element must not be exceeded.
Parameter
Symbol
V
CBO
V
CEO
P
C
Tstg
Limits
-
15
-
12
150 (TOTAL)
-
55 to
+
150
Unit
V
V
mW
C
C
V
EBO
I
C
-
6
-
500
1
3
2
V
mA
I
CP
1.0
A
Tj
150
SMT6 300 (TOTAL)
EMT6
UMT6
EMT18 / UMT18N / IMT18
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BV
CBO
-
15
-
-
V
I
C
= -
10
A
I
C
= -
1mA
I
E
= -
10
A
V
CB
= -
15V
V
CE
= -
2V, I
E
=
10mA, f
=
100MHz
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
Collector-emitter breakdown voltage
BV
CEO
-
12
-
-
V
Emitter-base breakdown voltage
BV
EBO
-
6
-
-
V
Collector cutoff current
I
CBO
-
-
-
0.1
A
V
CB
= -
6V
Emitter cutoff current
I
EBO
-
-
-
0.1
A
I
C
/ I
B
= -
200mA /
-
10mA
Collector-emitter saturation voltage
V
CE (sat)
-
-
100
-
250
mV
V
CE
= -
2V, I
C
= -
10mA
DC current transfer ratio
h
FE
270
-
680
-
Transition frequency
f
T
-
260
-
MHz
Output capacitance
Cob
-
6.5
-
pF

Packaging specifications and h
FE
Package name
Code
Taping
Basic ordering unit (pieces)
EMT18
UMT18N
IMT18
T2R
8000
TR
3000
-
-
-
-
T110
3000
-
-
Type

Electrical characteristic curves
1
2
5
10
20
50
100
200
500
1000
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
2V
Fig.1 Grounded Emitter Propagation
Characteristics
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
V
CE
=
2V
Fig.2 DC Current Gain vs.
Collector Current
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
)














EMT18 / UMT18N / IMT18
Transistors
Rev.A
3/3

1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25
C
I
C
/ I
B
=
50
I
C
/ I
B
=
20
I
C
/ I
B
=
10
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
)
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
EMITTER CURRENT : I
C
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
V
CE
=
2V
Ta
=
25
C
Fig.6 Gain Bandwidth Product vs.
Emitter Current

1
2
5
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
I
E
=
0A
f
=
1MHz
Ta
=
25
C
Cib
Cob
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
EMITTER INPUT CAPACITANCE :
Cib (
pF
)
COLLECTOR OUTPUT CAPACITANCE :
Cob (
pF
)
Appendix
Appendix1-Rev1.1


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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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