UMZ8.2N
Diodes
Zener diode
UMZ8.2N
Applications
Constant voltage control
Noise suppression on signal line
Features
1) Small surface mounting type. (UMD3)
2) Multiple diodes with common anode configuration.
3) High reliability.
Construction
Silicon epitaxial planar
Circuit
External dimensions (Units : mm)
2.1
0.1
1.25
0.1
0~0.1
0.15
0.05
0.3
0.1
2.0
0.2
1.3
0.1
0.65
0.65
0.9
0.1
0.3
0.6
0.1Min.
6 A
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
(All leads have the same dimensions)
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
Limits
Unit
200
mW
Tj
150
C
Tstg
-
55~
+
150
C
Total of 2 elements
Power dissipation
Junction temperature
Storage temperature
P
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
V
Z
7.76
8.64
V
I
Z
=5mA
I
R
-
0.50
A
V
R
=5V
Z
Z
-
30
I
Z
=5mA
Z
ZK
-
60
I
Z
=0.5mA
Operating resistance
Rising operating resistance
Reverse current
Zener voltage
UMZ8.2N
Diodes
Electrical characteristic curves (Ta = 25
C)
8.0
9.0
10.0
0.01
Ta=
-
25
C
Ta=25
C
Ta=75
C
Ta=125
C
ZENER CURRENT : I
Z
(mA)
ZENER VOLTAGE : V
Z
(V)
0.1
1
10
0
Fig.1 Zener voltage characteristics
Fig.2 Operating resistance
Zener current characteristics
ZENER CURRENT : I
Z
(mA)
1
10
100
0.1
1
10
DYNAMIC IMPEADANCE : Z
Z
(
)
1.0
0.9
0.3
0.4
0.5
0.6
0.7
0.8
0.01
Ta=
-
25
C
Ta=25
C
Ta
=
75
C
Ta=125
C
0.1
1
10
0
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.3 Forward characteristics
0
0
25
50
100
150
100
200
300
AMBIENT TEMPERATURE : Ta (
C)
POWER DISSIPATION : Pd (mW)
Fig.4 Derating curve
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