US5L9
Transistors
Rev.A
1/4
General purpose transistor
(isolated transistor and diode)
US5L9
A 2SB1709 and a RB461F are housed independently in a TUMT5 package.
Applications
DC / DC converter
Motor driver
Features
1) Tr : Low V
CE
(sat)
Di : Low V
F
2) Small package
Structure
Silicon epitaxial planar transistor
Schottky barrier diode
Equivalent circuit
Tr1
Di2
(5)
(4)
(3)
(2)
(1)
External dimensions (Unit : mm)
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65
0.65
(2)
(5)
(1)
(3)
(4)
1.7
0.2
0.2
2.1
0~0.1
0.85Max.
ROHM : TUMT5 Abbreviated symbol : L09
1pin mark
Packaging specifications
Type
US5L9
TUMT5
L09
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
US5L9
Transistors
Rev.A
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
-
15
-
12
-
6
-
1.5
0.7
150
-
40 to
+
125
-
3
2
1
Unit
V
V
V
A
A
W/ELEMENT
C
C
1
Single pulse, Pw=1ms.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
2
Mounted on a 25mm 25mm
t
0.8mm CERAMIC SUBSTRATE.
+
+
Di2
Parameter
Symbol
I
FSM
Limits
3
Unit
A
I
F
700
mA
Average rectified forward current
V
RM
25
V
Peak reverse voltage
Forward current surge peak (60H
Z
,
1
)
V
R
20
V
Reverse voltage (DC)
Tj
125
C
Junction temperature
P
D
0.5
W/ELEMENT
Power dissipation
Tstg
-
40 to
+
125
C
Range of storage temperature
Mounted on a 25mm 25mm
t
0.8mm CERAMIC SUBSTRATE.
+
+
Tr1&Di2
Parameter
Symbol
P
D
Limits
1.0
0.4
Unit
W/TOTAL
W/TOTAL
Total power dissipation
1
2
1
Mounted on a 25mm 25mm
t
0.8mm CERAMIC SUBSTRATE.
+
+
2
Each terminal mounted on a recommended lanel.
Electrical characteristics (Ta=25
C)
Tr1
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0mA, f
=
1MHz
f
T
-
400
-
MHz
V
CE
=-
2V, I
E
=
200mA, f
=
100MHz
BV
CEO
-
12
-
-
V
I
C
=-
1mA
BV
CBO
-
15
-
-
V
I
C
=-
10
A
BV
EBO
-
6
-
-
V
I
E
=-
10
A
I
CBO
-
-
-
100
nA
V
CB
=-
15V
I
EBO
-
-
-
100
nA
V
EB
=-
6V
V
CE(sat)
-
-
110
-
200
mV
I
C
=-
500mA, I
B
=-
25mA
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
200mA
Cob
-
12
-
pF
Di2
Parameter
Min.
Typ.
Max.
Unit
Conditions
-
490
-
mV
nS
I
F
=700mA
I
F
=I
R
=100mA, I
rr
=0.1I
R
V
R
=20V
Symbol
V
F
I
R
t
rr
-
-
-
-
200
9
A
Forward voltage
Reverse current
Reverse recovery time
US5L9
Transistors
Rev.A
3/4
Electrical characteristic curves
Tr1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.1
DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
100
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=-
2V
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2
Base-emitter saturation voltage
vs. collector current
0.001
0.01
10
0.1
1
I
C
/I
B
=
20/1
V
CE
=-
2V
Pulsed
Ta
=
100
C
Ta
=
100
C
Ta
=-
40
C
Ta
=-
40
C
V
BE
(sat)
V
CE
(sat)
Ta
=
25
C
Ta
=
25
C
BASE SATUATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3
Collector-emitter saturation voltage
vs. collector current
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta
=
25
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
0
0.5
1
1.5
BASE TO EMITTER CURRENT : V
BE(on)
(V)
Fig.4
Grounded emitter propagation
characteristics
0.001
COLLECTOR CURRENT : I
C
(A)
0.01
10
0.1
1
V
CE
=-
2V
Pulsed
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
0.001
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
Fig.5
Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta
=
25
C
V
CE
=-
2V
f
=
100MHz
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
10
10000
100
1000
Ta
=
25
C
V
CE
=-
5V
f
=
100MHz
tstg
tdon
tf
tr
SWITCHING TIME : (ns)
1
10
100
0.1
1
10
100
1000
f
=
1MHz
I
E
=
0mA
Ta
=
25C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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