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US6M1
Transistors
1/7
Small switching
US6M1
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TUMT6).
Application
Power switching, DC / DC converter.
External dimensions (Unit : mm)
Each lead has same dimensions
TUMT6
Abbreviated symbol : M01
2.0
0.1
0.85MAX
0.2MAX
0.77
0.05
0.17
0.05
2.1
0.1
1.7
0.1
0.2
0.2
0.65
1.3
0.1
1pin mark
0.65
+
0.1
-
0.05
0.3
(1)
(5)
(4)
(6)
(3)
(2)
0~0.1
Absolute maximum ratings (Ta=25
C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
C
Tch
150
C
Tstg
-
55 to
+
150
Tr1 : Nchannel
150
-
55 to
+
150
Tr2 : Pchannel
Limits
Unit
1 Pw
10
s, Duty cycle
1%
2 With each pin mounted on the recommended lands.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (T
C
=
25
C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
1
V
30
V
A
A
A
A
W
2
1
20
1.4
5.6
0.6
5.6
1
-
20
-
12
1
4
-
0.4
-
4
1
Thermal resistance (Ta=25
C)
Rth (ch-A)
125
Parameter
Symbol
Limits
Unit
Channel to ambient
C / W
Equivalent circuit
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
2
1
1
(1)
(6)
(5)
(4)
(2)
(3)
(6)
(5)
(4)
(1)
(2)
(3)
US6M1
Transistors
2/7
Electrical characteristics (Ta=25
C)
<Tr1. N-ch MOSFET>
Parameter
Symbol
I
GSS
Y
fs
Min.
-
Typ.
Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
-
10
A
V
GS
=
20V, V
DS
=
0V
V
DD
15V
R
L
10.7
30
-
-
V
I
D
=
1mA, V
GS
=
0V
-
-
1
A
V
DS
=
30V, V
GS
=
0V
1.0
-
2.5
V
V
DS
=
10V, I
D
=
1mA
-
170
240
I
D
=
1.4A, V
GS
=
10V
-
250
350
m
I
D
=
1.4A, V
GS
=
4.5V
-
270
380
I
D
=
1.4A, V
GS
=
4V
1.0
-
-
S
I
D
=
1.4A, V
DS
=
10V
-
70
-
pF
V
DS
=
10V
-
15
12
-
pF
V
GS
=
0V
-
6
-
pF
f
=
1MHz
V
GS
=
10V
R
L
=
21
R
GS
=
10
-
6
-
ns
-
13
-
ns
-
8
-
ns
-
1.4
-
ns
-
0.6
2.0
nC
-
0.3
-
nC
V
GS
=
5V
R
GS
=
10
-
-
nC
I
D
=
1.4A
I
D
=
0.7A, V
DD
15V
Body diode characteristics (Source-Drain) (Ta=25
C)
<Tr1. N-ch MOSFET>
V
SD
-
-
1.2
V
I
S
=
1.4A, V
GS
=
0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward voltage
Pulsed
US6M1
Transistors
3/7
Electrical characteristics (Ta=25
C)
<Tr2. P-ch MOSFET>
Parameter
Symbol
I
GSS
Y
fs
Min.
-
Typ.
Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
-
10
A
V
GS
=
12V, V
DS
=
0V
V
DD
-
15V
-
20
-
-
V
I
D
= -
1mA, V
GS
=
0V
-
-
-
1
A
V
DS
= -
20V, V
GS
=
0V
-
0.7
-
-
2.0
V
V
DS
= -
10V, I
D
= -
1mA
-
280
390
I
D
= -
1A, V
GS
= -
4.5V
-
310
430
m
I
D
= -
1A, V
GS
= -
4V
-
570
800
I
D
= -
0.5A, V
GS
= -
2.5V
0.7
-
-
S
I
D
= -
0.5A, V
DS
= -
10V
-
150
-
pF
V
DS
= -
10V
-
20
20
-
pF
V
GS
=
0V
-
9
-
pF
f
=
1MHz
V
GS
= -
4.5V
R
L
=
30
R
GS
=
10
-
8
-
ns
-
25
-
ns
-
10
-
ns
-
2.1
-
ns
-
0.5
-
nC
-
0.5
-
nC
V
GS
= -
4.5V
-
-
nC
I
D
= -
1A
I
D
= -
0.5A, V
DD
-
15V
R
L
=
15
R
GS
=
10
Body diode characteristics (Source-Drain) (Ta=25
C)
<Tr2. P-ch MOSFET>
V
SD
-
-
-
1.2
V
I
S
=
-
0.4A, V
GS
=
0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward voltage
Pulsed
US6M1
Transistors
4/7
N-ch
Electrical characteristic curves
1
10
100
1000
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(A)
CAPACITANCE : C
(pF)
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
1
10
100
1000
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
SWITCHING TIME : t
(ns)
Ta
=
25
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0
0.5
1
1.5
2
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta
=
25
C
V
DD
=
15V
I
D
=
1.5A
R
G
=
10
Pulsed
Fig.3 Dynamic Input Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
=
10V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
0
1
2
3
4
5
6
7
8
9
GATE-SOURCE VOLTAGE : V
GS
(V)
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
C
Pulsed
I
D
=
0.75A
I
D
=
1.5A
0.01
0.1
1
10
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
V
GS
=
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
V
GS
=
4.0V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1
10
0.1
0.01
0.1
1
10
V
GS
=
2.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
US6M1
Transistors
5/7
P-ch
Electrical characteristic curves
10
100
1000
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
-
V
DS
(V)
CAPACITANCE : C
(pF)
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
C
iss
C
rss
C
oss
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
10
1000
10000
100
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
SWITCHING TIME : t
(ns)
Ta
=
25
C
V
DD
= -
15V
V
GS
= -
4.5V
R
G
=
10
Pulsed
t
d (off)
t
d (on)
t
r
t
f
Fig.2 Switching Characteristics
Ta
=
25
C
V
DD
= -
15V
I
D
= -
1A
R
G
=
10
Pulsed
0
0.5
1
1.5
2
2.5
3
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
Fig.3 Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
Fig.4 Typical Transfer Characteristics
Ta
=
25
C
V
DS
= -
10V
Pulsed
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE :
-
V
GS
(V)
0
250
500
750
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
C
Pulsed
I
D
= -
1A
I
D
= -
0.5A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE-DRAIN VOLTAGE :
-
V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT :
-
I
S
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1000
10000
100
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
V
GS
= -
4.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1000
10000
100
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
V
GS
= -
4V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1000
10000
100
0.01
0.1
1
10
DRAIN CURRENT :
-
I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
V
GS
= -
2.5V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
US6M1
Transistors
6/7
N-ch
Measurement circuit
Fig.1-1 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching Waveforms
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
Fig.2-1 Gate Charge Measurement Circuit
V
GS
I
G(Const.)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.2-2 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
US6M1
Transistors
7/7
P-ch
Measurement circuit
Fig.3-1 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.3-2 Switching Waveforms
90%
90%
90%
10%
10%
10%
50%
50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
Fig.4-1 Gate Charge Measurement Circuit
V
GS
I
G(Const.)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.4-2 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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