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Электронный компонент: US6X8

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US6X8
Transistors
Rev.B
1/2
General purpose amplification (30V, 1A)
US6X8

Application
Low frequency amplifier

Features
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE
(sat) : max. 350mV
at Ic= 500mA / I
B
= 25mA




External dimensions (Unit : mm)
ROHM : TUMT6 Abbreviated symbol : X08
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65
0.65
(2)
(5)
(1)
(3)
(6)
(4)
1.7
0.2
0.2
2.1
0~0.1
0.85Max.
1pin mark

Absolute maximum ratings (Ta=25
C) Equivalent Circuit
(4)
(5)
(6)
Tr1
Tr2
(1)
(2)
(3)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Parameter
Symbol
Unit
1
V
CBO
V
V
CEO
V
V
EBO
V
I
C
A
I
CP
A
P
C
W/TOTAL
Tj
C
Tstg
Limits
30
30
6
1
2
0.4
150
-
55 to
+
150
C
Single pulse, P
W
=1ms
2
W/TOTAL
1.0
3
W/ELEMENT
0.7
3
Each Terminal Mounted on a Recommended
1
2
Mounted on a 25mm
25mm
t
0.8mm ceramic substrate
3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ. Max.
Unit
Conditions
30
-
-
V
I
C
=
10
A
Collector-base breakdown voltage
BV
CBO
30
-
-
V
I
C
=
1mA
Collector-emitter breakdown voltage
BV
CEO
6
-
-
V
I
E
=
10
A
Emitter-base breakdown voltage
BV
EBO
-
-
100
nA
V
CB
=
30V
Collector cutoff current
I
CBO
Emitter cutoff current
-
-
100
nA
V
EB
=
6V
I
EBO
-
120
350
mV
I
C
/I
B
=
500mA/25mA
Collector-emitter saturation voltage
V
CE(sat)
270
-
680
-
V
CE
/I
C
=
2V/100mA
DC current gain
h
FE
-
320
-
MHz V
CE
=
2V, I
E
=-
100mA, f
=
100MHz
Transition frequency
f
T
-
7
-
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector output capacitance
Cob

Pulsed
US6X8
Transistors
Rev.B
2/2
Packaging specifications
Package
Code
Basic ordering unit (pieces)
TR
3000
Type
US6X8

Electrical characteristic curves
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
10
DC CURRENT GAIN : h
FE
100
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
V
CE
=
2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.1
0.01
10
1
Ta
=
25
C
Ta
=
25
C
Ta
=-
40
C
Ta
=-
40
C
Ta
=
100
C
Ta
=
100
C
V
BE(sat)
V
CE(sat)
I
C
/I
B
=
20
Pulsed
I
C
/I
B
=
20/1
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
10
1
Ta
=
25
C
V
CE
=
2V
I
C
/I
B
=
50/1
I
C
/I
B
=
20/1
I
C
/I
B
=
10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.001
0.01
0.1
1
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
1.5
1.0
0.5
V
CE
=
2V
Pulsed
Ta
=
25
C
Ta
=-
40
C
Ta
=
100
C
Fig.4 Grounded emitter propagation
characteristics
0.01
0.1
1
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
100
1000
V
CE
=
2V
Ta
=
25
C
f
=
100MHz
Fig.5 Gain bandwidth product
vs. emitter current
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
10
100
1000
Ta
=
25
C
V
CE
=
5V
I
C
/I
B
=
20/1
tstg
tdon
tr
tf
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
100
Cib
Cob
I
C
=
0A
f
=
1MHz
Ta
=
25
C
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Appendix
Appendix1-Rev1.1


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