P-Channel E nhancement Mode Field E ffect Transistor
TO-252 Package.
ABS OLUTE MAXIMUM R ATINGS (T
C
=25 C unless otherwise noted)
S amHop Microelectronics C orp.
August , 2002
1
P R ODUC T S UMMAR Y
V
DS S
I
D
-30V
-10A
40 @ V
G S
= -10V
67 @ V
G S
= -4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S
G
D
S DU S E R IE S
TO-252AA(D-PAK)
G
S
D
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
20
V
GS
V
-Pulsed
I
D
A
I
DM
A
Drain-S ource Diode Forward Current
1.9
I
S
A
Maximum Power Dissipation
P
D
W
Operating and S torage Temperature R ange
T
J
, T
S TG
C
@ Tc=25 C
Derate above 25 C
2.5
Drain Current-Continuous @ TJ=125 C
a
-30
-10
-55 to 150
S DU9435A
-30
R
DS (ON) ( m
W
) T Y P
S DU9435A
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100
nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-1.5
-3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-5.3A
40
V
GS
-4.5V, I
D
-4.2A
67
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
-20
9
A
S
Forward Transconductance
FS
g
V
DS
-15V, I
D
- 5.3A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
860
P
F
470
P
F
P
F
180
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -15V,
I
D
= -1A,
V
GEN
= - 10V,
R
GEN
= 6 -ohm
9
20
ns
ns
ns
ns
10
40
37
90
23
110
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -5.3A,
V
GS
=-10V
15
nC
nC
nC
3
4
C
Fall Time
=
=
=
=
=
=
5
2
m-ohm
m-ohm
50
90
20
V
DS
=-15V,I
D
= -5.3A,V
GS
=-10V
V
DS
=-15V,I
D
= -5.3A,V
GS
=-4.5V
nC
8.6 10.5
S DU9435A
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-5.3A
-0.84 -1.3
V
b
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 3. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
5
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
6V
5V
4V
3V
-V
G S
=10,9,8,7V
25 C
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
-55 C
T j=125 C
3
F igure 4. On-R esistance Variation with
Temperature
O
n
-
R
e
s
i
s
t
a
n
c
e
(
O
h
m
s
)
R
D
S
(
O
N
)
,
1.8
1.6
1.2
0.8
1.4
1.0
0.6
-50
0
50
100
150
V
G S
=-10V
T j, J unction T emperature ( C )
I
D
=-5.3A
(
N
o
r
m
a
l
i
z
e
d
)
0 5 10 15 20 25 30
C iss
C oss
C rss
3000
2500
2000
1500
1000
500
0
S DU9435A
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
-I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
5
1.09
1.06
1.03
1.00
0.94
0.97
0.91
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=-250uA
-50 -25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
15
12
0
3
6
9
0
5
10
15
20
V
DS
=-15V
20.0
10.0
1.0
0.4
0.6
0.7
0.9
1.1
1.3
V
G S
=0V
8
10
6
4
2
0
0
2
4
6
8
10
12 14
16
V
DS
=-15V
I
D
=-5.3A
50
10
1
0.1
0.03
0.1
1
10
30 50
V
G S
=-10V
S ingle P ulse
T
A
=25 C
R
DS
(ON
) L
imi
t
10m
s
100
ms
1s
DC
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
5
6
S DU9435A
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
J A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
S ING LE P ULS E
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
INVE R TE D
-V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
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