N-Channel Logic Level E nhancement Mode Field E ffect Transistor
TO-220 and TO-263 Package.
ABS OLUTE MAXIMUM R ATINGS (T
C
=25 C unless otherwise noted)
S amHop Microelectronics C orp.
Nov 23, 2004
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
)
20V
18A
40 @ V
G S
= 4.5V
60 @ V
G S
= 2.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S
G
D
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
20
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
12
V
GS
V
-Pulsed
18
I
D
A
45
I
DM
A
Drain-S ource Diode Forward Current
15
I
S
A
Maximum Power Dissipation
P
D
W
Operating and S torage Temperature R ange
T
J
, T
S TG
-55 to 175
C
@ Tc=25 C
50
Drain Current-Continuous @ TJ=25 C
a
Max
S T P /B 3055L2
S TB S E R IE S
TO-263(DD-PAK)
G
S
D
S TP S E R IE S
TO-220
S
D
G
S T P /B 3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
16V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
12V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
0.6
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
4.5V, I
D
6.0A
40
V
GS
2.5V, I
D
5.2A
60
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
5.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GEN
= 4.5V,
R
L
= 10
ohm
R
GEN
= 6
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 6A,
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
m-ohm
m-ohm
V
DS
=10V,I
D
=6A,V
GS
=10V
V
DS
=10V,I
D
=6A,V
GS
=4.5V
nC
1.7
25
40
17
20
1
14.7
20
39.5
8.5
21.5
165
205
800
3.6
2.2
11.6
S TP/B3055L2
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =15A
1.1
1.3
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR4 Board, t 10sec.
5
0 2 4 6 8 10 12
Ciss
Coss
1500
1200
900
600
300
0
20
16
12
8
4
0
0
1
2
3
4
5
6
25 C
25
20
15
10
5
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
Tj=125 C
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
Tj( C)
-25
25
75
V
GS
=4.5V
I
D
=6A
Crss
-55 C
V
GS
=2V
V
GS
=10,9,8,7,6,5,4,3V
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
20
16
12
8
24
0
0
5
10
15
20
25
4
V
DS
=10V
20
10
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
2
4
6
8
10 12 14 16
V
DS
=10V
I
D
=6A
T
J
=25 C
60
10
1 1
0.1
0.03
0.1
1
10 20
50
10m
s
100
ms
1s
DC
V
G S
=4.5V
S ingle P ulse
Tc=25 C
4
-50 -25
0
25
50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=250uA
S T P /B 3055L2
R
DS
(O
N)
Li
mi
t
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
4
INVE R TE D
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
S quare Wave P ulse Duration (msec)
F igure 13. Normalized T hermal T ransient Impedance C urve
1. R
J C
(t)=r (t) * R
J C
2. R
J C
=S ee Datasheet
3. T
J M-
T
C
= P * R
J C
(t)
4. Duty C ycle, D=t1/t2
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P ulse
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
S TP /B 3055L2
S T P /B 3055L2
TO-263
TO-263 Carrier Tape
TO-263 Reel
Tape and Reel Data
UNIT:
PACKAGE
TO-252
(16 )
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.80
0.1
10.3
0.1
2.50
0.1
2
1.5
+ 0.1
- 0
16.0
0.3
1.75
0.1
7.5
0.15
8.0
0.1
4.0
0.1
2.0
0.15
0.3
0.05
UNIT:
TAPE SIZE
16
REEL SIZE
330
M
N
W
T
H
K
S
G
R
V
330
0.5
97
1.0
17.0
+ 1.5
- 0
2.2
13.0
+ 0.5
- 0.2
10.6
2.0
0.5
S
7
S T P /B 3055L2
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