30
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
25
V
Drain Current-Continuous @ Tj=25 C
-Pulsed
I
D
2.5
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
50
/W
C
S T M4435
a
a
a
a
b
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
1
J AN.20 2006
S amHop Microelectronics C orp.
S urface Mount Package.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
-8A
20 @ V
G S
= -10V
33 @ V
G S
= -4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S O-8
1
-30V
P-Channel E nhancement Mode Field E ffect Transistor
1.7
8
40
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-8.0A
20
V
GS
-4.5V, I
D
-5.0A
33
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
-20
A
S
Forward Transconductance
FS
g
V
DS
-15V, I
D
- 8.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
250
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -15V,
I
D
= -1A,
V
GEN
= - 10V,
R
GEN
= 6 -ohm
ns
ns
ns
ns
40
100
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -8A,
V
GS
=-10V
30
nC
nC
nC
3.4
9.2
C
Fall Time
22
=
=
=
=
=
=
5
2
m-ohm
m-ohm
nC
V
DS
=-15V, I
D
=-8A,V
GS
=-10V
V
DS
=-15V, I
D
=-8A,V
GS
=-4.5V
15
-3
375
1470
18
S T M4435
-1.8
16.5
26
S T M4435
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-1.7A
-0.75 -1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t <=10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
30
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3
25 C
20
15
10
5
1
0
0
-55 C
125 C
0.6
3.6
3.0
2.4
1.8
1.2
-V G S =2.5V
-V G S =4V
-V G S =3V
-V G S =4.5V
-V G S =10V
25
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-I
D
, Drain C urrent (A)
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
T j( C )
T j, J unction T emperature ( C )
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
50
20
10
0
12
18
24
30
0
V
G S
=-10V
V
G S
=-4.5V
6
30
40
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
125
100
75
V
G S
=-10V
I
D
=-8A
150
V
G S
=-4.5V
I
D
=-5A
S T M4435
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-1.7A
-0.75 -1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t <=10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
30
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3
25 C
20
15
10
5
1
0
0
-55 C
125 C
0.6
3.6
3.0
2.4
1.8
1.2
-V G S =2.5V
-V G S =4V
-V G S =3V
-V G S =4.5V
-V G S =10V
25
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-I
D
, Drain C urrent (A)
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
T j( C )
T j, J unction T emperature ( C )
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
50
20
10
0
12
18
24
30
0
V
G S
=-10V
V
G S
=-4.5V
6
30
40
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
125
100
75
V
G S
=-10V
I
D
=-8A
150
V
G S
=-4.5V
I
D
=-5A
6
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
5
F igure 12. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
C i ss
C oss
2000
1200
1600
800
400
0
C r ss
0
5
10
15
20
25
30
8
10
6
4
2
0
V
DS
=-15V
I
D
=-8A
100
10
1
1
6 10
60 100
60
600
300
600
V D S = -15V,I D=-1A
V G S =
V
T D(off)
T f
T D (o n)
T r
-10
4
8
12
16 20
24 28 32
0
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S T M4435
50
10
1
0.1
0.03
0.1
1
10
30 50
V
G S
=-10V
S ingle P ulse
T
A
=25 C
R
DS
(O
N)
Lim
it
10m
s
100
ms
1s
DC
F igure 13. S witching T est C ircuit
F igure 14. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
2
1
0.1
0.01
S quare Wave P ulse Duration (sec)
F igure 15. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
6
5
S T M4435
INVE R TE D
Duty C ycle=0.5
0.2
0.1
0.05
0.02
S ingle P ulse
10
-4
10
-3
10
-2
10
-1
1
10
100
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
thJ A
2. R
thJ A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
thJ A
(t)
4. Duty C ycle, D=t
1
/t
2
-V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
PAC K AG E OUT LINE DIME NS IONS
S O-8
7
S Y MB OLS
MIN
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0
1.35
0.10
4.80
3.81
5.79
0.41
0
MAX
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8
1.75
0.25
4.98
3.99
6.20
1.27
8
MILLIME T E R S
INC HE S
A
A1
D
E
H
L
1
e
B
H
E
L
A
1
A
C
D
0.05 TYP.
0.016 TYP.
0.008
TYP.
0.015X45
S T M4435
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
unit:
PACKAGE
SOP 8N
150
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.40
5.20
2.10
1.5
(MIN)
1.5
+ 0.1
- 0.0
12.0
0.3
1.75
5.5
0.05
8.0
4.0
2.0
0.05
0.3
0.05
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
N
W
W1
H
K
S
G
R
V
330
1
62
1.5
12.4
+ 0.2
16.8
- 0.4
12.75
+ 0.15
2.0
0.15
S T M4435
8
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