Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
Mar.30, 2005 V er1.1
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
N-Channel P-Channel
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ T
J
=125 C
-Pulsed
I
D
2.0
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
62.5
/W
C
a
a
a
a
b
30
5.5
23
1.7
-30
-4.5
-18
-1.7
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
)
30V
5.5A
40@ V
G S
= 10V
50@ V
G S
= 4.5V
S O-8
1
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
(N-C hannel)
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
)
-30V
-4.5A
55@ V
G S
= -10V
85@ V
G S
= -4.5V
(P -C hannel)
S amHop Microelectronics C orp.
Max
Max
S T M4532
20
20
S T M4532
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
0.8
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
6A
V
GS
4.5V, I
D
5.2A
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
6.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GEN
= 4.5V,
R
L
= 10
R
GEN
= 6
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 6A,
V
GS
=4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
1.8
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
m ohm
m ohm
ohm
ohm
50
40
28
40
15
6
510
155
127
15.6
9.7
26.3
26.9
9.3
2.5
3.2
100
S T M4532
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
nA
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-1.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-4.9A
55
V
GS
-4.5V, I
D
-3.6A
85
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-15V, I
D
- 4.9A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -15V,
R
L
= 15
I
D
= -1A,
V
GEN
= -10V,
R
GEN
= 6
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= - 4.9A,
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
ON CHAR ACTER ISTICS
b
m ohm
m ohm
ohm
ohm
nC
V
DS
=-15V, I
D
=-4.9A,V
GS
=-10V
V
DS
=-15V, I
D
=-4.9A,V
GS
=-4.5V
-2.5
45
75
-12
4
393
116
45
13
4.7
47.1
17
15.6
7.3
2.4
3.3
100
S T M4532
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
G S
= 0V, Is =1.7A
N-C h
0.77
1.2
-0.82 -1.2
V
G S
= 0V, Is =-1.7A P -C h
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
F igure 3. C apacitance
V
DS
, Drain-to S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR 4 Board, t 10sec.
4
R
D
S
(
O
N
)
,
1.8
1.6
1.2
0.8
1.4
1.0
0.6
-55
0
50
100
25 C
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-55 C
N-C hannel
T j=125 C
10
8
6
4
2
0
0
2
4
6
8
10
12
V
G S
=10,9,8,7,6,5,4,3V
V
G S
=1.5V
0 2 4 6 8 10 12
C iss
C rss
1200
1000
800
600
400
200
0
C oss
T J , J unction T emperature ( C )
125
75
25
-25
V
G S
=10V
I
D
=6A
N
o
r
m
a
l
i
z
e
d
S T M4532
N-C hannel
1.6
1.4
1.2
1.0
0.6
0.8
0.4
-55 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
5
5
F igure 6. B reakdown V oltage V ariation
with T emperature
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
T j, J unction T emperature ( C )
-50 -25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
F igure 5. G ate T hres hold V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
T j, J unction T emperature ( C )
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
I
DS
, Drain-S ource C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
15
12
9
6
18
0
0
5
10
15
20
25
3
V
DS
=10V
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
=25 C
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