30
N-Channel E nhancement Mode Field E ffect Transistor
S urface Mount Package.
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
20
V
Drain Current-Continuous @ T
J
=25 C
-Pulsed
I
D
1.7
3.0
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
40
/W
C
S T M7064N
a
a
a
a
b
S amHop Microelectronics C orp.
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) T yp
30V
16A
6 @ V
G S
= 10V
8.5 @ V
G S
= 4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
Aug 17
,
2005
16
50
4
5
3
6
2
7
1
8
D
D
D
D
S
G
S
S
Bottom-side
Drain Contact
Thermal Pad E xposed with S tandard S OP-8 Outline
S OP -8
E xposed
1
D
D
D
D
D
S S
SG
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
=
1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
1.6
3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
16A
6
V
GS
4.5V, I
D
12A
8.5
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
8A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
=16A
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
uA
m ohm
m ohm
V
DS
=15V, I
D
=16A,V
GS
=10V
nC
V
DS
=15V, I
D
=16A,V
GS
=4.5V
30
320
550
3200
58.6
30
93
48
32
12
6.5
29
20
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
3.2
S TM7064N
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
10
7.5
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 1.7A
1.3
V
b
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 2. Transfer Characteristics
Figure 4. On-R esistance VS. Temperature
Temperature
I
D
, Drain Current (A)
V
GS
, Gate-to-Source Voltage (V)
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
3
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
STM7064N
12.0
10.0
8.0
6.0
4.0
2.0
0
-55 C
25 C
20
15
10
5
0
0
0.7
1.4
2.1
2.8
3.5
4.2
Tj=125 C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-55
-25
0
25
125
0.74
Tj( C)
100
50
75
V
GS
=10V
I
D
=16A
Tj, Junction Temperature ( C)
Figure 1. Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
GS
=8V
V
GS
=3V
V
GS
=4.5V
V
GS
=10V
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
5
10
15
20
25
0
V
GS
=10V
V
GS
=4.5V
V
GS
=4.5V
I
D
=12A
a.Surface Mounted on FR4 Board, t <=10sec.
S TM7064N
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
4
6
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
V
G S
, G ate-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
24
20
16
12
8
4
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
125 C
70 C
25 C
70 C
125 C
I
D
=16A
S TM7064N
6
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
10
8
6
4
2
0
0
8
16 24 32 40
48
56 64
V
DS
=15V
I
D
=16A
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 5 10 15 20 25 30
5400
4500
3600
2700
1800
900
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
100
10
1
1
6 10
60 100
60
600
300
600
T D(on)
T r
T f
V DS =15V ,ID=1A
V G S =10V
5
T D(off)
F igure 12. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
10
1
0.1
0.03
0.1
1
10
30 50
V
G S
=10V
S ingle P ulse
T
A
=25 C
R
DS
(O
N)
L
im
it
10m
s
100
ms
1s
DC
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
6
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
S T M7064N
PAC K AG E OUT LINE DIME NS IONS
S OP -8
7
S T M7064N
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
unit:
PACKAGE
SOP 8N
150
A
B
C
D
E
12.0
0.3
5.0
0.1
4.0
0.1
6.5
0.1
1.5
0.1
UNIT:
TAPE SIZE
12
REEL SIZE
300
M
N
W
300
101
10
0.2
S T M7064N
8
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