Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
J an.10 2006
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
N-Channel P-Channel
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ Ta
-Pulsed
I
D
2
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
62.5
/W
C
a
a
a
a
b
55
1.7
-55
-1.7
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
55V
5A
50 @ V
G S
= 10V
70 @ V
G S
= 4.5V
S O-8
1
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
(N-C hannel)
P R ODUC T S UMMAR Y
V
DS S
I
D
-55V
- 3.5A
80 @ V
G S
= -10V
@ V
G S
= -4.5V
(P -C hannel)
S amHop Microelectronics C orp.
20
20
- 18
R
JA
S T M8501
R
DS (ON) ( m
W
) Max
25 C
70 C
Ta= 25 C
Ta=70 C
1.44
-
A
100
2.8
- 3.5
Drain-S ource Voltage R ating
Vspike
-60
60
V
5
4.2
22
d
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
55
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
44V, V
GS
0V
=
=
1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1.0
3.0
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
4.5A
V
GS
4.5V, I
D
4A
70
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
5V, I
D
4.5A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V
I
D
= 1 A
V
GS
= 10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=30V, I
D
= 4.5 A
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
50
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=30V, I
D
=4.5A,V
GS
=10V
nC
V
DS
=30V, I
D
=4.5A,V
GS
=4.5V
15
50
85
930
20
5
29
14
17
4.5
2.9
9.5
15
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
3.9
S T M8501
1.7
34
45
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-55
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-44V, V
GS
0V
=
=
-1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1.0
-
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS -
10V, I
D
-3A
V
GS -
4.5V, I
D
-2A
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-5V, I
D
-3A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-30V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -30V
R
L
= 30 ohm
V
GS
= -10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-30V, I
D
= -3 A
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
5
uA
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=-30V, I
D
=-3A,V
GS
=-10V
nC
V
DS
=-30V, I
D
=-3A,V
GS
=-4.5V
10
58
85
900
18.5
24
84
16
13
4.5
1.8
9.1
8.5
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
4.2
-
S T M8501
1.7
3.0
60
80
80
100
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
5
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
GS
=3V
-55 C
20
15
10
5
1
0
0
0.8
1.6
2.4
3.2
4.0
4.8
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
N-Ch
0.8
1.2
-0.78
-1.2
V
GS
= 0V, Is =-1.7A
P-Ch
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300s, Duty Cycle 2%.
a.Surface Mounted on FR4 Board, t 10sec.
N-Channel
V
GS
=3.5V
25 C
Tj=125 C
V
GS
=4.5V
V
GS
=10V
S T M8501
I
D
, Drain C urrent (A)
R
D
S
(
o
n
)
(
m
W
)
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
60
50
40
30
20
10
0
10
15
20
25
0
V
G S
=10V
V
G S
=4.5V
5
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
T j( C )
T j, J unction T emperature ( C )
2.0
1.8
1.6
1.4
1.2
1.0
0
0
25
50
125
100
75
V
G S
=10V
I
D
=4.5A
V
G S
=4.5V
I
D
=4A
150
d.Guaranteed when external R g=6 ohm and tf < tf max.
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
5
6
V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
F igure 7. On-R esistance vs.
G ate-S ource V oltage
with T emperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25
50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
60
40
20
0
0
25 C
I
D
=25A
125 C
75 C
2
4
6
8
10
80
100
20.0
10.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
25 C
75 C
125 C
F igure 5. G ate T hres hold V ariation
S T M8501
120
6
F igure 12. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
6
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
C iss
C oss
1250
750
1000
500
250
0
C rss
0
5
10
15
20
25
30
8
10
6
4
2
0
V
DS
=30 V
I
D
=4.5A
100
10
1
1
6 10
60 100
60
600
300
600
V DS =30V ,ID=1A
V G S =
V
T D (off)
T f
T D(o n)
T r
10
3
6
9
12
15 18 21 24
0
0.01
0.1
1
9
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
S T M8501
40
10
1 1
0.1
0.03
0.1
1
10
50 60
10m
s
100
ms
1s
DC
V
G S
=10V
S ingle P ulse
T
A
=25 C
R
DS
(ON
) L
imi
t
7
P-C hannel
F igure 1. Output C har acter istics
F igure 2. Tr ansfer C har acter istics
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
25 C
20
15
10
5
1
0
0
0.8
1.6
2.4
3.2
4.0
4.8
-55 C
T j=125 C
-V
GS
=3V
-V
G S
=3.5V
-V
G S
=4.5V
-V
G S
=6V
-V
G S
=2.5V
-V
G S
=10V
S T M8501
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-I
D
, Drain C urrent (A)
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
T j( C )
T j, J unction T emperature ( C )
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
100
40
20
0
8
12
16
20
0
V
G S
=-10V
V
G S
=-4.5V
4
60
80
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
125
100
75
V
G S
=-10V
I
D
=-3A
150
V
G S
=-4.5V
I
D
=-2A
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
8
6
-V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
F igure 7. On-R esistance vs.
G ate-S ource V oltage
F igure 5. G ate T hres hold V ariation
with T emperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=-250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
120
80
40
0
0
25 C
I
D
=-20A
125 C
75 C
2
4
6
8
10
160
180
220
20.0
10.0
1.0
0.3
0.6
0.9
1.2
1.5
25 C
75 C
125 C
0
S T M8501
6
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
9
F igure 12. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
C i ss
C oss
1000
600
800
400
200
0
C r ss
0
5
10
15
20
25
30
8
10
6
4
2
0
V
DS
=-30V
I
D
=-3A
100
10
1
1
6 10
60 100
60
600
300
600
V D S = -30V,I D=-1A
V G S =
V
T D(o ff)
T f
T D(o n)
T r
-10
3
6
9
12 15
18 21 24
0
0.01
0.1
1
9
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
S T M8501
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
50
10
1 1
0.1
0.03
0.1
1
10
60
R
DS
(O
N)
Li
mi
t
10m
s
100
ms
1s
DC
V
G S
=-10V
S ingle P ulse
T
A
=25 C
50
1m
s
PAC K AG E OUT LINE DIME NS IONS
S O-8
10
S Y MB OLS
MIN
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0
1.35
0.10
4.80
3.81
5.79
0.41
0
MAX
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8
1.75
0.25
4.98
3.99
6.20
1.27
8
MILLIME T E R S
INC HE S
A
A1
D
E
H
L
1
e
B
H
E
L
A
1
A
C
D
0.05 TYP.
0.016 TYP.
0.008
TYP.
0.015X45
S T M8501
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
unit:
PACKAGE
SOP 8N
150
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.40
5.20
2.10
1.5
(MIN)
1.5
+ 0.1
- 0.0
12.0
0.3
1.75
5.5
0.05
8.0
4.0
2.0
0.05
0.3
0.05
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
N
W
W1
H
K
S
G
R
V
330
1
62
1.5
12.4
+ 0.2
16.8
- 0.4
12.75
+ 0.15
2.0
0.15
11
S T M8501
PDF 
ZIP