K1S3216BCC.fm
Revision 2.0
September 2004
K1S3216BCC
- 1 -
UtRAM
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision History
Revision No.
1.0
2.0
Remark
Final
Final
History
Revised
- Corrected tOH from 5ns to 3ns.
Draft Date
February 25, 2004
September 20, 2004
Revision 2.0
September 2004
K1S3216BCC
- 2 -
UtRAM
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S3216BCC-I
Industrial(-40~85
C)
1.7~2.1V
70ns
100
A
35mA
48-FBGA-6.00x8.00
2M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S3216BCC is fabricated by SAMSUNG
s advanced
CMOS technology using one transistor memory cell. The device
support 4 page mode operation, Industrial temperature range
and 48 ball Chip Scale Package for user flexibility of system
design. The device also supports deep power down mode for
low standby current.
FEATURES
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7~2.1V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: 48-FBGA-6.00x8.00
PIN DESCRIPTION
1) Reserved for future use
Name
Function
Name
Function
CS1,CS2 Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
20
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
48-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
NC
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
1
2
3
4
5
6
A
B
C
D
E
F
G
H
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
Revision 2.0
September 2004
K1S3216BCC
- 3 -
UtRAM
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 200
s with CS1=high.or CS2=low.
Min. 200
s
TIMING WAVEFORM OF POWER UP(1)
(CS
1
controlled)
TIMING WAVEFORM OF POWER UP(2)
(CS
2
controlled)
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.), wait 200
s with CS
2
low. Then the device gets into the normal operation.
V
CC
CS
1
CS
2
V
CC(Min)
POWER UP(1)
1. After V
CC
reaches V
CC
(Min.), wait 200
s with CS
1
high. Then the device gets into the normal operation.
Min. 200
s
V
CC
CS
1
CS
2
V
CC(Min)
Normal Operation
Power Up Mode
Normal Operation
Power Up Mode
Revision 2.0
September 2004
K1S3216BCC
- 4 -
UtRAM
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.2 to V
CC
+0.3V
V
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 2.5V
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
C
Operating Temperature
T
A
-40 to 85
C
FUNCTIONAL DESCRIPTION
1. X means don
t care.(Must be low or high state)
CS1
CS2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
Revision 2.0
September 2004
K1S3216BCC
- 5 -
UtRAM
DC AND OPERATING CHARACTERISTICS
1. Typical values are tested at V
CC
=2.9V,
T
A
=25
C and not guaranteed.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
A
Output leakage current
I
LO
CS=V
IH,
ZZ=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
A
Average operating current
I
CC1
Cycle time=1
s, 100% duty, I
IO
=0mA, CS
0.2V,
ZZ
Vcc-0.2V, V
IN
0.2V or V
IN
V
CC
-0.2V
-
-
5
mA
I
CC2
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS=V
IL
, ZZ=V
IH,
V
IN
=V
IL
or V
IH
-
35
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
=-1.0mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
2)
CS
Vcc-0.2V, ZZ
Vcc-0.2V, Other inputs=Vss to Vcc
-
-
100
A
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
20ns.
3. Undershoot: -1.0V in case of pulse width
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.8/2.0
2.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
PRODUCT LIST
Industrial Temperature Product(-40~85
C)
Part Name
Function
K1S3216BCC-FI70
K1S3216BCC-FI85
48-FBGA, 70ns, 1.8/2.0V
48-FBGA, 85ns, 1.8/2.0V
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