K3N6C1000F-C
MASK ROM DIE
FEATURES
Single 5.0V power supply
Fast Access Time
5.0V Operation : 100ns (min)@C
L
=50pF
120ns (min)@C
L
=100pF
x16 or x8 configurable with BHE-pin
TTL compatible inputs and outputs
Three State Outputs
32M-Bit(4Mx8/2Mx16) CMOS Mask ROM
GENERAL PHYSICAL SPECIFICATIONS
Backside die surface of polished bare silicon
Typical Die Thickness = 320
m
Typical top-level metalization : 99.3% AI + 0.2% Si + 0.5% Cu 6K Angstroms thickness
Topside Passivation :1.5K Angstroms PEOX, 3K Angstroms SiN, 10K Angstroms Polymide
Typical Pad Size : 100
m x 100
m
Die Size : 6120.0
m x 4200.0
m (Including 140
m scribe line)
OPTIONS
Bare Die : Functionally tested only
DIE OUTLINE
(Top View)
58
59
6120
m x 4200
m
including 140
m scribe line
K3N6C1000F
PAD Diagram
57
56
55
53
52
51
48
50
49
46
47
45
44
43 42 41 40
5
6
10
11
12
15
16
17
22
18
19
20
21
GENERAL ORDERING INFORMATION
32Mbit 5.0V Bare Die K3N6C1000F-C
PACKAGING OPTIONS
Chip Trays(Waffle Pack)
24
39
23
3
4
1
2
13
14
54
Y
X
(0.0000, 0.0000)
25
26
27
35
33
34
32
31
30 29 28
7
8
9
38
36
37
K3N6C1000F-C
MASK ROM DIE
GENERAL PHYSICAL SPECIFICATIONS
Please refer to the packaged product data sheet found in the applicable SAMSUNG data book for functional and parametric specifi-
cations. For bare(C) die, these specifications are provided for reference only and SAMAUNG makes no guarantees or warranties on
die level.
BONDING INSTRUCTIONS
The 32Mb Mask ROM die has total 59 pads. Refer to the bond pad location and identification table for a complete list of bond pads
and coordinates. SAMSUNG recommends using a bond wire on each Vcc and Vss bond pad for improved noise immunity. The 32Mb
Mask ROM device operates with single 5.0V power supply, and all inputs and outputs are fully TTL compatible.
BONDING METHOD(Samsung Stitch Bonder)
Management Items for Bonding Machine
Process Monitor Item
Wire Pull Test
P.M(Preventive Maintanance)Items
Wedge Change Period
Bonding Force
Bonding Time
Bonding Power
USG Output
Wire Clamp Tention
Note) Every control limits are not concerned above items because many kinds of machines are used on user under various
condition.
Management items and Criteria for Bonding process
1. Die Orientation : It is bad part, if the die diverges vertically or horizontally out of Cavity Center line more than 20mil.
2. Bond width : It is bad part, if Bond ball of Bond Pad and Lead is smaller than 1.2 times of wire
s diameter or bigger than 3 times
of it.
3. Bond Length : It is bad part, if Bond length of Bond Pad and Lead is smaller than 1.5 times of wire
s diameter or bigger than 5
times of it.
4. Bond Off Pad : It is bad part, less than 50% of Bond is located on Open pad.
5. Bond Bridging : It is bad part, if Bond is Connected with Metal line or located on it.
6. Wire Broken : It is bad part, if wire is broken.
7. Bond Tail : It is bad part, if Bond tail of Die Pad is bigger than 2 times of wire
s diameter.
8. Stray Wire : It is bad part, if wire is not connected with Lead and Die Cavity.
9. Tron/Necked Down Wire : It is bad part, if such damage of wire as teared, scratched, or wrinkled is bigger than a quarter of
wire
s diameter.
10. Wire shorts
It is bad part, if the distance from bonded wire to die
s surface, to lead, or to other wire is shorts than wire
s diameter.
It is bad part, if wire is warped more than 90
.
It is bad part, if the wire bonded on Die attath Pad is touched with an edge of die or distance between them is shorter than
wire
s diameter.
11. Bond Pad Void : It is bad part, if Oxide exposed before or after reworking is spreaded wider than a quarter of Bond Pad
s Sur-
face.
12 Wire Sagging : It is bad part, if any wire is damaged or bears signs of damage.
(They are bad parts in following cases.)
K3N6C1000F-C
MASK ROM DIE
PACKING
Individual die will be packed in either anti-static trays.
Chip Trays : A 2-inch square waffle style carrier with separate compartments for each die. Commonly referred to as a waffle pack,
each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents rotation. the
tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic discharge.
The chip carriers will be labeled with the follwing information :
SAMSUNG wafer lot number
SAMSUNG part number
Quantity
Bond Pad #1 at Top
Die orientation in chip carries
STANDARD PROBE TESTING
SAMSUNG probes wafers at a temperature with limits guard banded to assure product performance from 0
to
70
in SAMSUNG
s
satandard packaging. Since the packaging environment is not ensure that the junction die temperature remains within specified lim-
its.
Wafer probe consists of various functional and parametric tests of each die. Test patterns, timing, voltage margins, limits, and test
sequence are determined by individual product yields and reliability data.
SAMSUNG retains a wafer map of each wafer as part of the probe records along with a lot summary of wafer yields each lot probed.
SAMSUNG reserves the right to change the probe program at any time to improve the reliability, packaged device yield, or perfor-
mance of the product.
SAMSUNG recommends the die be stored in a controlled environment with filtered nitrogen. The carrier should only be opened at an
ESD safe environment at times for inspection and assembly.
STORAGE AND HANDLING
K3N6C1000F-C
MASK ROM DIE
PAD#
FUNCTION
X
Y
1
A3
0.000
0.000
2
A4
0.302
0.000
3
A5
0.604
0.000
4
A6
0.906
0.000
5
A7
1.208
0.000
6
A17
1.510
0.000
7
A18
1.812
0.000
8
DNU
2.114
0.000
9
T
2.716
0.000
10
A20
3.318
0.000
11
A19
3.620
0.000
12
A8
3.922
0.000
13
A9
4.224
0.000
14
A10
4.526
0.000
15
A11
4.828
0.000
16
A12
5.130
0.000
17
A13
5.432
0.000
18
A14
5.586
-0.246
19
A15
5.586
-0.537
20
A16
5.586
-0.788
21
BHE
5.586
-1.039
22
DNU
5.586
-1.352
23
DNU
5.586
-1.990
24
DNU
5.586
-2.709
25
DNU
5.586
-2.960
26
Vss
5.491
-3.220
27
Vss
5.586
-3.605
28
Q15/A-1
5.476
-3.820
29
Q7
5.210
-3.820
BOND PAD LOCATION AND IDENTIFICATION TABLE
PAD#
FUNCTION
X
Y
30
Q14
4.914
-3.820
31
Q6
4.648
-3.820
32
Q13
4.352
-3.820
33
Q5
4.086
-3.820
34
Q12
3.790
-3.820
35
Q4
3.524
-3.820
36
Vcc
3.199
-3.770
37
Vcc
3.049
-3.770
38
DNU
2.716
-3.770
39
T
2.521
-3.820
40
Q11
2.204
-3.820
41
Q3
1.908
-3.820
42
Q10
1.642
-3.820
43
Q2
1.346
-3.820
44
Q9
1.080
-3.820
45
Q1
0.784
-3.820
46
Q8
0.518
-3.820
47
Q0
0.222
-3.820
48
OE
-0.044
-3.820
49
Vss
-0.154
-3.605
50
Vss
-0.059
-3.220
51
DNU
-0.154
-2.960
52
DNU
-0.154
-2.709
53
DNU
-0.154
-2.140
54
DNU
-0.154
-1.990
55
DNU
-0.154
-1.352
56
CE
-0.154
-1.039
57
A0
-0.154
-0.788
58
A1
-0.154
-0.537
59
A2
-0.154
-0.246
1. DNU stands for not use
2. Reference to the center of each pad from center of Bond Pad #1
3. All units are in milimeters
4. In case of using byte mode you should be set BHE-pad = V
IL
(A-1 of PAD #21 is LSB Address)
5. T stands for Tie-bar GND Bonding
PAD DESCRIPTIONS
PAD NAME
DESCRIPTIONS
A0 ~ A20
Address Inputs
Q0 ~ Q14
Data Outputs
Q15/A-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip enable
OE
Output enable
Vcc
Power Supply
Vss
Ground
DNU
Do not use
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