Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 2 -

Revision History

Version 0.0 (Oct. / 5 / 2001)
- First Release
Version 0.1 (Dec. / 15 / 2001)
- The product name is changed to Network-DRAM
Version 0.2 (Jan. / 21 / 2002)
- M-version is renamed to C-version
- Specify DC operating condition values
- Added Power Up Sequence and Power Down(CL=4) Timing Diagrams
Version 0.3 (Mar. / 23 / 2002)
- The product name is changed to Network RAM
- Added Speed bin (366Mbps/pin,183MHz)
Version 0.4 (May. / 01 / 2002)
- The product name is changed to Network-DRAM
- Redefined I

DD1S

, I

DD5

in DC Characteristic

Version 0.5 (Nov. /23 / 2002)
-Updated the current spec. value
Version 0.6 (Apr. /9 / 2003)
-Changed IDD2P value from 2mA to 3mA in page 10.
-Changed capacitance of DQ/DQS

Version 0.7 (Aug.31 / 2003)
-Changed tCK max like below

Unit: pF

From

Min

Max

Min

Max

Capacitance(DQ/DQS)

4.0

6.0

3.0

6.0

From

8.5

7.5

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 3 -

General Information

Organization

D4 (400Mbps)

DA (366Mbps )

D3 (333Mbps )

256Mx8

K4C560838C-TCD4

K4C560838C-TCDA

K4C560838C-TCD3

256Mx16

K4C561638C-TCD4

K4C561638C-TCDA

K4C561638C-TCD3

T : TSOP II (400mil x 875mil)

D4 : 400bps/pin (200MHz, CL=4)
DA : 366bps /pin (183MHz, CL=4)
D3 : 333bps/pin (167MHz, CL=4)

C : (Commercial, Normal)

08 : x8
16 : x16

56 : 256M 8K/64ms

C : Network-DRAM

C : 4th Generation

K 4 C XX XX X X X - X X

Memory

DRAM

Small Classification

Density and Refresh

Temperature & Power

Package

Organization

Version

Interface (VDD & VDDQ)

1. SAMSUNG Memory : K

2. DRAM : 4

3. Small Classification

4. Density & Refresh

5. Organization

8. Version

9. Package

10. Temperature & Power

11. Speed

3 : 4 Bank

6. Bank

1 2 3 4 5 6 7 8 9 10 11

8: SSTL-2(2.5V, 2.5V)

7. Interface (VDD & VDDQ)

Speed

Bank

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 4 -

· Fully Synchronous Operation
Double Data Rate (DDR)
Data input/output are synchronized with both edges of DQS.
Differential Clock (CK and CK)inputs
CS, FN and all address input signals are sampled on the positive edge of CK.
Output data (DQs and DQS) is referenced to the crossings of CK and CK.
· Fast clock cycle time of 5ns minimum Clock : 200MHz maximum
Data : 400Mbps/pin maximum
· Quad independent banks operation
· Fast cycle and short Iatency
· Bidirectional data strobe signal
· Distributed Auto-Refresh cycle in 7.8us
· Self-Refresh
· Power Down Mode
· Variable Write Length Control
· Write Latency = CAS Latency - 1
· Programmable CAS Latency and Burst Length
CAS Latency = 3, 4
Burst Length = 2, 4
· Organization K4C561638C-TC : 4,194,304 words x4 banks x 16
K4C560838C-TC : 8,388,608 words x4 banks x 8
· Power supply voltage Vdd : 2.5 ± 0.15V

VddQ : 2.5 ± 0.15V

· 2.5V CMOS I/O comply with SSTL-2 (Strong / Normal / Weaker / Weakest)
· Package 400X875mil, 66pin TSOP II, 0.65mm pin pitch (TSOP II 66-P-400-0.65)

Item

K4C560838/1638C-TC

D4 (400Mbps)

DA (366Mbps)

D3 (333Mbps)

Clock Cycle Time (Min.)

CL=3

5.5ns

6ns

6.5ns

CL=4

5ns

5.5ns

6ns

Random Read/Write Cycle Time (Min.)

25ns

27.5ns

30ns

RAC

Random Access Time (Max.)

22ns

24ns

26ns

DD1S

Operating Current (Single bank) (Max.)

310mA

300mA

290mA

DD2P

Power Down Current (Max.)

2mA

DD6

Self-Refresh Current(Max.)

3mA

Key Feature

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 5 -

Pin Names

Name

A0 to A14

Address Input

BA0, BA1

Bank Address

DQ0 to DQ7 (x8)

Data Input/Output

DQ0 to DQ15 (x16)

Chip Select

Function Control

Power Down Control

CK, (CK)

Clock Input

DQS (X8)

Write/Read Data Strobe

UDQS/LDQS (X16)

Vdd

Power(+2.5V)

Vss

Ground

VddQ

Power (+2.5V)
(for I/O buffer)

VssQ

Ground
(for I/O buffer)

REF

Reference Voltage

NC1,NC2

No Connection

1
2
3
4
5
6
7
8
9

10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33

66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34

400mil Width

875mil Length

66Pin TSOP II

0.65mm

Lead Pitch

Vdd Vdd

DQ0 DQ0

VddQ VddQ

DQ1 NC

DQ2 DQ1

VssQ VssQ

DQ3 NC

DQ4 DQ2

VddQ VddQ

DQ5 NC

DQ6 DQ3

VssQ VssQ

DQ7 NC

VddQ VddQ

LDQS NC

Vdd Vdd

A14 A14
A13 A13

FN FN

CS CS

BA0 BA0
BA1 BA1

A10 A10

A0 A0
A1 A1
A2 A2
A3 A3

Vdd Vdd

Vss Vss
DQ7 DQ15
VssQ VssQ
NC

DQ14

DQ6 DQ13
VddQ VddQ
NC

DQ12

DQ5 DQ11
VssQ VssQ
NC

DQ10

DQ4 DQ9
VddQ VddQ
NC

DQ8

VssQ VssQ
DQS UDQS
NC

VREF VREF
Vss Vss
NC

CK CK
CK CK
PD PD
NC

A12 A12
A11 A11
A9 A9
A8 A8
A7 A7
A6 A6
A5 A5
A4 A4
Vss Vss

K4C561638C-TC

K4C560838C-TC

Pin Assignment (Top View)

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 8 -

Absolute Maximum Ratings

Caution : Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device.

The device is not meant to be operated under conditions outside the limits described in the operational section of this specifi-
cation. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.

Recommanded DC,AC Operating Conditions (Notes : 1)

(Ta = 0 to 70 ×

Symbol

Parameter

Rating

Units

Notes

Vdd

Power Supply Voltage

-0.3 to 3.3

VddQ

Power Supply Voltage (for I/O buffer)

-0.3 to Vdd + 0.3

Input Voltage

-0.3 to Vdd + 0.3

OUT

DQ pin Voltage

-0.3 to VddQ + 0.3

REF

Input Reference Voltage

-0.3 to Vdd + 0.3

OPR

Operating Temperature

0 to 70

STG

Storage Temperature

-55 to 150

SOLDER

Soldering Temperature(10s)

260

Power Dissipation

OUT

Short Circuit Output Current

± 50

Symbol

Parameter

Min

Typ

Max

Units

Notes

Vdd

Power Supply Voltage

2.35

2.5

2.65

VddQ

Power Supply Voltage (for I/O Buffer)

2.35

2.5

2.65

REF

Input Reference Voltage

VddQ/2*96%

VddQ/2

VddQ/2*104%

(DC)

Input DC high Voltage

REF

+0.2

VddQ+0.2

(DC)

Input DC Low Voltage

-0.1

REF

-0.2

ICK

(DC)

Differential Clock DC Input Voltage

-0.1

VddQ+0.1

(DC)

Input Differential Voltage. CK and CK Inputs (DC)

0.4

VddQ+0.2

7,10

(AC)

Input AC High Voltage

REF

+0.35 -

VddQ+0.2

3,6

(AC)

Input AC Low Voltage

-0.1

REF

-0.35

4,6

(AC)

Input Differential Voltage. CK and CK Inputs (AC)

0.7

VddQ+0.2

7,10

(AC)

Differential AC Input Cross Point Voltage

VddQ/2-0.2

VddQ/2+0.2

8,10

ISO

(AC)

Differential Clock AC Middle Level

VddQ/2-0.2

VddQ/2+0.2

9,10

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 9 -

1. All voltages are referenced to Vss, VssQ.
2. V

REF

is expected to track variations in VddQ DC level of the transmitting device.

Peak to peak AC noise on V

REF

may not exceed ± 2% of V

REF

(DC).

3. Overshoot Iimit : V

(max.) = VddQ + 0.9V with a pulse width <= 5ns

4. Undershoot Iimit : V

(min.) = -0.9V with a pulse width <= 5ns

5. V

(DC) and V

(DC) are levels to maintain the current logic state.

6. V

(AC) and V

(AC) are levels to change to the new logic state.

7. V

is magnitude of the difference between CK input level and CK input level.

8. The value of Vx(AC) is expected to equal VddQ/2 of the transmitting device.
9. V

ISO

means [V

ICK

(CK) + V

ICK

(CK)]/2

10. Refer to the figure below.

Notes

11. In the case of external termination, VTT(Termination Voltage) should be gone in the range of V

REF

(DC) ± 0.04V.

Pin Capacitance

(Vdd, VddQ = 2.5V, f = 1MHz, Ta = 25×

)

Note : These parameters are periodically sampled and not 100% tested.
2 The NC

pins have additional capacitance for adjustment of the adjacent pin capacitance.

1 The NC

pins have Power and Ground clamp.

Symbol

Parameter

Min

Max

Units

Input Pin Capacitance

2.5

4.0

INC

Clock Pin (CK, CK) Capacitance

2.5

4.0

I/O

I/O Pin (DQ, DQS) Capacitance

3.0

6.0

NC1 Pin Capacitance

1.5

NC2 Pin Capacitance

4.0

6.0

CLK

(AC)

0 V Differential

ISO

ICK

ISO

(min)

ICK

ISO

(max)

(AC)

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 10 -

DC Characteristics and Operating Conditions

(Vdd, VddQ = 2.5V ± 0.15V, Ta = 0~70×

)

Notes : 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of t

, t

and I

2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register.

Item

Symbol

Max

Units

Notes

D4(400Mbps) DA(366Mbps) D3(333Mbps)

Operating Current
t

= min, I

=min

Read/Write command cycling
OV<=V

<=V

IL(AC)

(max.) V

IH(AC)

(min.) <=V

<=VddQ

1 bank operation, Burst Length = 4
Address change up to 2 times during minimum I

DD1S

310

300

290

1, 2

Standby Current
t

=min, CS = V

, PD = V

0V<=V

<=V

IL(AC)

(max.) V

IH(AC)

(min.)<=V

<=VddQ

All Banks : inactive state
Other input signals are changed one time during 4*t

DD2N

Standby (Power Down) Current
t

=min, CS = V

, PD = V

(Power Down)

0V<=V

<=VddQ

All Banks : inactive state

DD2P

Auto-Refresh Current
t

= min, I

REFC

= min, t

REFI

= min

Auto-Refresh command cycling
0V<=V

<=V

(AC) (max.), V

(AC) (min.) <=V

<=VddQ

Address change up to 2 times during minimum I

REFC

DD5

105

100

Self-Refresh Current
self-Refresh mode
PD = 0.2V, OV<=V

<=VddQ

DD6

Item

Symbol

Min

Max

Unit

Notes

Input Leakage Current
(0V<=V

<=VddQ, All other pins not under test = 0V)

-5

Output Leakage Current
(Output disabled, 0V<=V

OUT

<=VddQ)

-5

REF

Current

REF

-5

Normal Output Driver

Output Source DC Current
V

= VddQ - 0.4V

(DC)

-10

Output Sink DC Current
V

=0.4V

(DC)

Strong Output Driver

Output Source DC Current
V

= VddQ - 0.4V

(DC)

-11

Output Sink DC Current
V

=0.4V

(DC)

Weaker Output Driver

Output Source DC Current
V

= VddQ - 0.4V

(DC)

-8

Output Sink DC Current
V

=0.4V

(DC)

Weakest Output Driver

Output Source DC Current
V

= VddQ - 0.4V

(DC)

-7

Output Sink DC Current
V

=0.4V

(DC)

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 11 -

AC Characteristics and Operating Conditions (Notes : 1, 2)

Symbol

Item

D4(400Mbps)

DA(366Mbps)

D3(333Mbps)

Units Notes

Min

Max

Min

Max

Min

Max

Random Cycle Time

27.5

Clock Cycle Time

CL = 3

5.5

7.5

6.5

7.5

CL = 4

7.5

5.5

7.5

RAC

Random Access Time

Clock High Time

0.45*t

Clock Low Time

0.45*t

CKQS

DQS Access Time from CLK

-0.65

0.65

-0.75

0.75

-0.85

0.85

3, 8

QSQ

Data Output Skew from DQS

0.4

0.45

0.5

Data Access Time from CLK

-0.65

0.65

-0.75

0.75

-0.85

0.85

3, 8

Data Output Hold Time from CLK

-0.65

0.65

-0.75

0.75

-0.85

0.85

3, 8

QSPRE

DQS(Read) Preamble Pulse Width

0.9*t

-0.2

1.1*t

+0.2

0.9*t

-0.2

1.1*t

+0.2

0.9*t

-0.2

1.1*t

+0.2

CLK half period ( minium of Actual t

, t

)

min(t

, t

)

min(t

, t

)

min(t

, t

)

QSP

DQS(Read) Pulse Width

HP-0.55

HP-0.6

HP-0.65

QSQV

Data Output Valid Time from DQS

HP-0.55

HP-0.6

HP-0.65

DQSS

DQS(Write) Low to High Setup Time

0.75*t

1.25*t

0.75*t

1.25*t

0.75*t

1.25*t

DSPRE

DQS(Write) Preamble Pulse Width

0.4*t

DSPRES DQS First Input Setup Time

DSPREH DQS First Low Input Hold Time

0.25*t

DSP

DQS High or Low Input Pulse Width

0.45*t

0.55*t

0.45*t

0.55*t

0.45*t

0.55*t

DSS

DQS Input Falling Edge to Clock Setup Time

CL = 3

1.3

1.4

1.5

3, 4

CL = 4

1.3

1.4

1.5

3, 4

DSPST

DQS(Write) Postamble Pulse Width

0.45*t

DSPSTH DQS(Write) Postamble Hold Time

CL = 3

1.3

1.4

1.5

3, 4

CL = 4

1.3

1.4

1.5

3, 4

DSSK

UDQS - LDQS Skew (x16)

-0.5*t

0.5*t

-0.5*t

0.5*t

-0.5*t

0.5*t

Data Input Setup Time from DQS

0.5

0.6

Data Input Hold Time from DQS

0.5

0.6

DIPW

Data Input pulse Width (for each device)

1.5

1.9

Command / Address Input Setup Time

0.9

Command / Address Input Hold Time

0.9

IPW

Command / Address Input Pulse Width (for each device)

2.0

2.2

Data-out Low Impedance Time from CLK

-0.65

-0.75

-0.85

3, 6, 8

Data-out High Impedance Time from CLK

0.65

0.75

0.85

3, 7, 8

QSLZ

DQS-out Low Impedance Time from CLK

-0.65

-0.75

-0.85

3, 6, 8

QSHZ

DQS-out High Impedance Time from CLK

-0.65

0.65

-0.75

0.75

-0.85

0.85

3, 7, 8

QPDH

Last Output to PD High Hold Time

PDEX

Power Down Exit Time

Input Transition Time

0.1

FPDL

PD Low Input Window for Self-Refresh Entry

-0.5*t

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 12 -

AC Characteristics and Operating Conditions (Notes : 1, 2) (Continued)

Symbol

Item

D4(400Mbps)

DA(366Mbps)

D3(333Mbps)

Units Notes

Min

Max

Min

Max

Min

Max

REFI

Auto-Refresh Average Interval

0.4

7.8

0.4

7.8

0.4

7.8

PAUSE

Pause Time after Power-up

200

Random Read/Write Cycle Time

(Applicable to Same Bank)

CL = 3

Cycle

CL = 4

RCD

RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)

RAS

LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)

CL = 3

CL = 4

RBD

Random Bank Access Delay
(Applicable to Other Bank)

RWD

LAL following RDA to WRA Delay
(Applicable to Other Bank)

BL = 2

BL = 4

WRD

LAL following WRA to RDA Delay
(Applicable to Other Bank)

RSC

Mode Register Set Cycle Time

CL = 3

CL = 4

PD Low to Inactive State of Input Buffer

PDA

PD High to Active State of Input Buffer

PDV

Power down mode valid from REF command

CL = 3

CL = 4

REFC

Auto-Refresh Cycle Time

CL = 3

CL = 4

CKD

REF Command to Clock Input Disable
at Self-Refresh Entry

LOCK

DLL Lock-on Time (Applicable to RDA command)

200

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 13 -

AC Test Conditions

Symbol

Parameter

Value

Units

Notes

(min)

Input high voltage (minimum)

REF

+ 0.35

(max)

Input low voltage (maximum)

REF

- 0.35

REF

Input reference voltage

VddQ/2

Termination voltage

REF

SWING

Input signal peak to peak swing

1.0

Differential clock input reference level

X(AC)

(AC)

Input differential voltage

1.5

SLEW

Input signal minimum slew rate

1.0

V/ns

OTR

Output timing measurement reference voltage

VddQ/2

min

(AC)

REF

max

(AC)

SWING

VddQ

Vss

Z=50

=50

CL=30pF

REF

Measurement Point

Output

Output Load Circuit(SSTL_2)

Slew=(V

min

(AC)

- V

max

(AC)

Notes : 1. Transition times are measured between V

min

(DC)

and V

max

(DC)

Transition (rise and fall) of input signals have a fixed slope.
2. If the result of nominal calculation with regard to t

contains more than

one decimal place, the result is rounded up to the nearest decimal place.
(i.e., t

DQSS

= 0.75*t

, t

= 5ns, 0.75*5ns = 3.75ns is rounded up to 3.8ns.)

3. These parameters are measured from the differential clock (CK and CK) AC cross point.
4. These parameters are measured from signal transition point of DQS crossing V

REF

level.

5. The t

REFI

(MAX.) applies to equally distributed refresh method.

The t

REFI

(MIN.) applies to both burst refresh method and distributed refresh method.

In such case, the average interval of eight consecutive Auto-Refresh commands has to be more than 400ns always. In

other words, the number of Auto- Refresh cycles which can be performed within 3.2us (8X400ns) is to 8 times in the

maximum.

6. Low Impedance State is speified at VddQ/2± 0.2V from steady state.
7. High Impedance State is specified where output buffer is no longer driven.
8. These parameters depend on the clock jitter. These parameters are measured at stable clock.

=0.5*VddQ

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 14 -

Power Up Sequence

1. As for PD, being maintained by the low state (<0.2V) is desirable before a power-supply injection.
2. Apply Vdd before or at the same time as VddQ.
3. Apply VddQ before or at the same time as V

REF

4. Start clock (CK, CK) and maintain stable condition for 200us (min.).
5. After stable power and clock, apply DESL and take PD = H.
6. Issue EMRS to enable DLL and to define driver strength. (Note : 1)
7. Issue MRS for set CAS Latency (CL), Burst Type (BT), and Burst Length (BL). (Note : 1)
8. Issue two or more Auto-Refresh commands. (Note:1)
9. Ready for normal operation after 200 clocks from Extended Mode Register programming. (Note : 2)

Note : 1. Sequence 6, 7 and 8 can be issued in random order.
2. L=Logic Low, H = Logic High

DESL

RDA MRS

DESL

RDA MRS

DESL WRA REF

WRA REF

DESL

EMRS

MRS

op-code

Hi-Z

DDQ

REF

CLK
CLK

Command

Address

DQS

200

s(min)

PDA

RSC

REFC

2.5V(TYP)

1.25V(TYP)

REFC

PDEX

200 clock cycle(min)

EMRS

MRS

Auto Refresh cycle

Nomal Operation

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 17 -

LAL

(after WRA)

Input

(Control &

Addresses)

DQS

(Input)

IPW

DQSS

DSPRES

DSP

DSPST

DSS

DSPSTH

Postamble

Preamble

DSS

DSPRE

DQSS

Write Timing (Burst Length = 4)

CAS latency = 3

DQS

(Input)

DSPRES

DSP

DSPST

DSS

DSPSTH

Postamble

Preamble

DSS

DIPW

DQSS

CAS latency = 4

DSS

DQSS

Note. The correspondence of LDQS, UDQS to DQ. (K4C561638C-TC)

LDQS

DQ0 to 7

UDQS

DQ8 to 15

Command

Input

(Control &

Addresses)

tREFI, tPAUSE, Ixxxx Timing

Command

REFI,

PAUSE,

XXXX

Note. "

XXXX

"means "

", "

RCD

", "

RAS

", etc.

~ ~

DIPW

DSPRE

DSPREH

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 19 -

Function Truth Table (Notes : 1,2,3)

Command Truth Table (Notes : 4)

·The First Command

Symbol

Function

BA1-BA0

A14-A9

A6-A0

DESL

Device Deselect

RDA

Read with Auto-close

WRA

Write with Auto-close

·The Second Command (The next clock of RDA or WRA command)

Notes : 1. L = Logic Low, H = Logic High, X = either L or H, V = Valid (Specified Value), BA = Bank Address, UA = Upper Address,

LA = Lower Address.

2. All commands are assumed to issue at a valid state.

3. All inputs for command (excluding SELFX and PDEX) are latched on the crossing point of differential clock input where

CLK goes to High.

4. Operation mode is decided by the comination of 1st command and 2nd command refer to "STATE DIAGRAM" and the

command table below.

Symbol

Function

BA1-BA0 A14-A13 A12-A11 A10-A9

A6-A0

LAL

Lower Address Latch (x16)

LAL

Lower Address Latch (x8)

REF

Auto-Refresh

MRS

Mode Register Set

Read Command Table

Notes : 5. For x16 device, A7 is "X" (either L or H).

Command (Symbol)

BA1-BA0

A14-A9

A6-A0

Notes

RDA (1st)

LAL (2nd)

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 20 -

Write Command Table

K4C561638C-TC

Command (Symbol)

BA1-BA0

A14

A13

A12

A11

A10-A9

A6-A0

WRA (1st)

LAL (2nd)

LVWO

LVW1

UVW0

UVW1

K4C560838C-TC

Note : 6. A14 to A11 are used for variable Write Length (VW) control at Write Operation.

Command (Symbol)

BA1-BA0

A14

A13

A12

A11

A10-A9

A6-A0

WRA (1st)

LAL (2nd)

VWO

VW1

VW Truth Table

Note : 7. For x16 device, LVW0 and LVW1 control DQ0-DQ7, UVW0 and UVW1 control DQ8-DQ15.

Function

VW0

VW1

BL = 2

Write All Words

Write First One Word

BL = 4

Reserved

Write All Words

Write First Two Words

Write First One Word

Mode Register Set Command Truth Table

Note : 8. Refer to "Mode Register Table".

Command (Symbol)

BA1-BA0

A14-A9

A6-A0

Notes

RDA (1st)

MRS (2nd)

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 21 -

Function Truth Table (Continued)

Auto-Refresh Command Table

Function

Command

(Symbol)

Current

State

BA1-BA0 A14-A9

A6-A0

Notes

n-1

Active

WRA(1st)

Standby

Auto-Refresh

REF(2nd)

Active

Self-Refresh Command Table

Function

Command

(Symbol)

Current

State

FN BA1-BA0 A14-A9 A8

A7 A6-A0 Notes

n-1

Active

WRA(1st)

Standby

Self-Refresh Entry

REF(2nd)

Active

9, 10

Self-Refresh Continue

Self-Refresh

Self-Refresh Exit

SELFX

Self-Refresh

Power Down Table

Notes : 9. PD has to be brought to Low within t

FPDL

from REF command.

10. PD should be brought to Low after DQ's state turned high impedance.
11. When PD is brought to High from Low, this function is executed asynchronously.

Function

Command

(Symbol)

Current

State

FN BA1-BA0 A14-A9 A8

A6-A0 Notes

n-1

Power Down Entry

PDEN

Standby

Power Down Continue

Power Down

Power Down Exit

PDEX

Power Down

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 22 -

Function Truth Table (Continued)

Notes : 12. Illegal if any bank is not idle.
13. Illegal to bank in specified states : Function may be Legal in the bank indicated by bank Address (BA).
14. Illegal if t

FPDL

is not satisfied.

Current State

Address

Command

Action

Notes

n-1

Idle

DESL

NOP

BA, UA

RDA

Row activate for Read

BA, UA

WRA

Row activate for Write

PDEN

Power Down Entry

Illegal

Refer to Power Down state

Row Active for Read

LAL

Begin read

Op-Code

MRS/EMRS Access to Mode Register

PDEN

Illegal

REF (Self)

Illegal

Invalid

Row Active for Write

LAL

Begin Write

REF

Auto-Refresh

PDEN

Illegal

REF (Self)

Self-Refresh entry

Invalid

Read

DESL

Continue burst read to end

BA, UA

RDA

Illegal

BA, UA

WRA

Illegal

PDEN

Illegal

Invalid

Write

DESL

Data write & continue burst write to end

BA, UA

RDA

Illegal

BA, UA

WRA

Illegal

PDEN

Illegal

Invalid

Auto-Refreshing

DESL

NOP-> Idle after I

REFC

BA, UA

RDA

Illegal

BA, UA

WRA

Illegal

PDEN

Self-Refresh entry

Illegal

Refer to Self-Refreshing state

Mode Register Accessing

DESL

Nop-> Idle after I

RSC

BA, UA

RDA

Illegal

BA, UA

WRA

Illegal

PDEN

Illegal

Invalid

Power Down

Invalid

Maintain Power Down Mode

RDEX

Exit Power Down Mode->Idle after t

PDEX

Illegal

Se;f-Refreshing

Invalid

Maintain Self-Refresh

SELFX

Exit Self-Refresh->Idle after I

REFC

Illegal

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 23 -

Mode Register Table

Regular Mode Register

(Notes : 1)

Address

BA1

BA0

A14-A8

A6-A4

A2-A0

Test Mode (TM)

Regular (Default)

Test Mode Entry

Burst Type (BT)

Sequential

Interleave

CAS Latency (CL)

Reserved

Burst Length (BL)

Reserved

Extended Mode Register (Notes : 4)

Address

BA1

BA0

A14-A7

A5-A2

DIC

Output Driver Impedance Control (DIC)

Normal Output Driver

Strong Output Driver

Weaker Output Driver

Weakest Output Driver

DLL Switch (DS)

DLL Enable

DLL Disable

Note : 1. Regular Mode Register is Chosen Using the combination of BA0 = 0 and BA1 = 0.

2. "Reserved" places in Regular Mode Register should not be set.
3. A7 in Regular Mode Register must be set to "0"(Low state).

Because test Mode is specific mode for supplier.

4. Extended Mode Register is chosen using the Combination of BA0 = 1 and BA1 = 0.

K4C5608/1638C 256Mb Network-DRAM

- 25 -

REV. 0.7 Aug. 2003

Q0 Q1

RDA

LAL

DESL

RDA

LAL

DESL

RDA

LAL

Q0 Q1 Q2 Q3

= 5 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

Hi-Z

CL = 3

Hi-Z

CL = 3

Hi-Z

Command

DQS

(Output)

BL = 2

(Output)

DQS

(Output)

BL = 4

(Output)

Q0 Q1

RDA

LAL

DESL

RDA

LAL

DESL

RDA

LAL

Q0 Q1 Q2 Q3

Q0 Q1 Q2

= 5 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

Hi-Z

CL = 4

Hi-Z

Command

DQS

(Output)

BL = 2

(Output)

DQS

(Output)

BL = 4

(Output)

Timing Diagrams

Single Bank Read Timing (CL = 3)

CL = 4

Single Bank Read Timing (CL = 4)

K4C5608/1638C 256Mb Network-DRAM

- 26 -

REV. 0.7 Aug. 2003

WRA

LAL

DESL

WRA

LAL

DESL

WRA

LAL

D0 D1

= 5 cycles

Command

DQS

(Input)

BL = 2

(input)

Single Bank Write Timing (CL = 3)

D0 D1

D2 D3

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RCD

= 1 cycle

WL = 2

DQS

(Input)

BL = 4

(input)

DQSS

WL = 2

WRA

LAL

DESL

WRA

LAL

DESL

WRA

LAL

D0 D1

= 5 cycles

Command

DQS

(Input)

BL = 2

(input)

Single Bank Write Timing (CL = 4)

D0 D1

D2 D3

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RCD

= 1 cycle

WL = 3

DQS

(Input)

BL = 4

(input)

DQSS

WL = 3

Note :

means "H" or "L"

K4C5608/1638C 256Mb Network-DRAM

- 27 -

REV. 0.7 Aug. 2003

D0 D1

Q0 Q1

RDA

LAL

DESL

WRA

LAL

DESL

RDA

LAL

Q0 Q1 Q2 Q3

D0 D1 D2 D3

= 5 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

Hi-Z

CL = 3

WL = 2

Hi-Z

Command

DQS

BL = 2

DQS

BL = 4

Single Bank Read-Write Timing (CL = 3)

D0 D1

Q0 Q1

RDA

LAL

DESL

WRA

LAL

DESL

RDA

LAL

Q0 Q1 Q2 Q3

D0 D1 D2 D3

= 5 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

RAS

= 4 cycles

Hi-Z

CL = 4

WL = 3

Hi-Z

CL = 4

WL = 3

Hi-Z

Command

Single Bank Read-Write Timing (CL = 4)

CL = 3

WL = 2

DQSS

DQS

BL = 2

DQS

BL = 4

K4C5608/1638C 256Mb Network-DRAM

- 28 -

REV. 0.7 Aug. 2003

RDAa

RDAb

= 5 cycles

RBD

= 2 cycles

Command

Multiple Bank Read Timing (CL = 3)

RAS

= 4 cycles

LALa

RDAb

LALb

DESL

RDAa

LALa

RDAc

LALc

RDAd

LALd

Bank"b"

Bank"a"

Bank"c"

Bank"d"

Bank"b"

Hi-Z

Qa0 Qa1

Hi-Z

CL = 3

Hi-Z

Qb0 Qb1

Qa0 Qa1

Qc0

Hi-Z

Qa0 Qa1

Hi-Z

CL = 3

Hi-Z

Qb0 Qb1

Qc0

Qa2 Qa3

Qb3

Qb2

Qa0 Qa1 Qa2 Qa3

CL = 3

RBD

= 2 cycles

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RBD

= 2 cycles

RBD

= 2 cycles

Bank Add.

(BA0, BA1)

DQS

BL = 2

DQS

BL = 4

(Output)

RDAa

RDAb

= 5 cycles

RBD

= 2 cycles

Command

Multiple Bank Read Timing (CL = 4)

RAS

= 4 cycles

LALa

RDAb

LALb

DESL

RDAa

LALa

RDAc

LALc

RDAd

LALd

Bank"b"

Bank"a"

Bank"c"

Bank"d"

Bank"b"

Hi-Z

Qa0 Qa1

Hi-Z

CL = 4

Hi-Z

Qb0 Qb1

Qa0 Qa1

Hi-Z

Qa0 Qa1

Hi-Z

CL = 4

Hi-Z

Qb0 Qb1

Qa2

Qa2 Qa3

Qb3

Qb2

Qa0 Qa1

CL = 4

RBD

= 2 cycles

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RCD

=1 cycle

RBD

= 2 cycles

RBD

= 2 cycles

Bank Add.

(BA0, BA1)

DQS

BL = 2

DQS

BL = 4

(Output)

Note : "X" is don't care. I

to the same bank must be satisfied.

K4C5608/1638C 256Mb Network-DRAM

- 29 -

REV. 0.7 Aug. 2003

Da0 Da1

Multiple Bank Write Timing (CL = 3)

Da0 Da1

WL = 2

DQSS

WRAa

WRAb

= 5 cycles

RBD

= 2 cycles

RAS

= 4 cycles

LALa

WRAb

LALb

DESL

WRAa

LALa

WRAc

LALc

WRAd

LALd

Bank"b"

Bank"a"

Bank"c"

Bank"d"

Bank"b"

RBD

= 2 cycles

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RBD

= 2 cycles

RBD

= 2 cycles

DQSS

WL = 2

Db0 Db1

Dc0 Dc1

WL = 2

Da0 Da1

Db0 Db1

Da2 Da3

Db3

Db2

Da0 Da1

Dc0 Dc1

Da2 Da3

Dc2

Command

Bank Add.

(BA0, BA1)

DQS

BL = 2

DQS

BL = 4

(input)

WL = 2

DQSS

Da0 Da1

Multiple Bank Write Timing (CL = 4)

Da0 Da1

WL = 3

DQSS

WRAa

WRAb

= 5 cycles

RBD

= 2 cycles

RAS

= 4 cycles

LALa

WRAb

LALb

DESL

WRAa

LALa

WRAc

LALc

WRAd

LALd

Bank"b"

Bank"a"

Bank"c"

Bank"d"

Bank"b"

RBD

= 2 cycles

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RCD

= 1 cycle

RBD

= 2 cycles

RBD

= 2 cycles

DQSS

WL = 3

Db0 Db1

Dc0

WL = 3

Da0 Da1

Db0 Db1

Da2 Da3

Db3

Db2

Da0 Da1

Dc0

Da2 Da3

Command

Bank Add.

(BA0, BA1)

DQS

BL = 2

DQS

BL = 4

(input)

WL = 3

DQSS

Dc1

Note :

means "H" or "L" "X" is don't care I

to the same bank must be satisfied.

K4C5608/1638C 256Mb Network-DRAM

- 30 -

REV. 0.7 Aug. 2003

Multiple Bank Read-Write Timing (BL = 2)

DQSS

WRAa

LALc

RBD

= 2 cycles

LALa

RDAb

LALb

DESL

WRAc

LALc

RDAd

LALd

DESL

WRAc

Bank"b"

Bank"a"

Bank"c"

Bank"d"

Bank"c"

Command

Bank Add.

(BA0, BA1)

DQS

CL = 3

DQS

CL = 4

Dc0 Dc1

Da0 Da1

Hi-Z

WL = 2

Qb0 Qb1

Qd0

RCD

= 1 cycle

RWD

= 2 cycles

RBD

= 2 cycles

RWD

= 2 cycles

= 5 cycles

RCD

= 1 cycle

WRD

= 1 cycle

RCD

= 1 cycle

WRD

= 1 cycle

RCD

= 1 cycle

DQSS

Hi-Z

CL = 3

WL = 2

CL = 3

DQSS

Dc0 Dc1

Da0 Da1

WL =3

Qb0 Qb1

DQSS

Hi-Z

CL = 4

WL = 3

CL = 4

Hi-Z

Multiple Bank Read-Write Timing (BL = 4)

WL = 2

WRAa

RBD

= 2 cycles

LALa

RDAb

LALb

WRAc

LALc

RDAd

LALd

Bank"b"

Bank"a"

Bank"c"

Command

Bank Add.

(BA0, BA1)

DQS

CL = 3

Da0 Da1

Hi-Z

Qb0 Qb1

RCD

= 1 cycle

RWD

= 3 cycles

RBD

= 2 cycles

RCD

= 1 cycle

WRD

= 1 cycle

RCD

= 1 cycle I

WRD

= 1 cycle

RCD

= 1 cycle

DQSS

DESL

Bank"d"

DESL

Da2 Da3

Qb2 Qb3

Dc0 Dc1 Dc2 Dc3

DQSS

CL = 3

Hi-Z

WL = 2

CL = 3

Hi-Z

WL = 3

DQS

CL = 4

Da0 Da1

Hi-Z

Qb0 Qb1

Da2 Da3

Qb2 Qb3

Dc0 Dc1 Dc2

CL = 4

WL = 3

Dc3

Note : "X" is dont care
I

to the same bank must be satisfied.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 31 -

Single Bank Write with VW (CL=3, BL=4, Sequential mode)

DESL

WRA

LAL

WRA

LAL

Command

Address

DQS

DESL

WRA

LA=#3

= 5 cycles

VW=2

LA=#1

VW=1

D0 D1

DESL

WRA

LAL

WRA

LAL

Command

DESL

WRA

LA=#3

LVW=1

D0 D1

x8 device

Last two data are masked

Last three data are masked

Address #3 #0 (#1) (#2)

#1 (#2) (#3) (#0)

(Input)

x16 device

Address

UDQS

(Input)

DQ8 to

DQ15

(Input)

LDQS

(Input)

DQ0 to

DQ7

(Input)

UVW=2

LA=#3

LVW=1

UVW=1

Last two data are masked

Last three data are masked

Address #3 #0 (#1) (#2)

#1 (#2) (#3) (#0)

Address #3 (#0) (#1) (#2)

#1 (#2) (#3) (#0)

Last three data are masked

Notes : DQS input must be continued till end of burst count even if some of laster data is masked.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 32 -

Q0 Q1

RDA

LAL

DESL

RDA

MRS

DESL

RDA

= 5 cycles

RCS

= 5 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

Hi-Z

CL = 3

Hi-Z

Command

Mode Register Set Timing (CL=3, BL=2)

DQS

WRA

BA,UA

Valid

A14 to A0

(Op-Code)

BA,UA

BA0, BA1

(Output)

Q0 Q1

RDA

LAL

DESL

RDA

n-1

n+1

n+2

PDA

= 1 cycles

RCD

= 1 cycle

Hi-Z

CL = 3

Hi-Z

Command

Power Down Timing (CL=3, BL=2)

DQS

WRA

A14 to A0

BA0, BA1

(Output)

DESL

IPD = 1 cycle

QPDH

PDEX

Power Down Exit

Power Down Entry

Note : "x" is don't care.

IPD is defined from the first clock rising edage after PD is brought to "Low".
IPDA is defined from the first clock rising edage after PD is brought to "High".

PD must be kept "High" level until end of Burst data output.
PD should be brought to high within t

REFI(max)

to maintain the data written into cell.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 34 -

Q0 Q1

RDA

LAL

DESL

WRA

REF

DESL

LAL or

= 5 cycles

REFC

= 15 cycles

RCD

= 1 cycle

RAS

= 4 cycles

RCD

= 1 cycle

Hi-Z

CL = 3

Hi-Z

Command

Auto-Refresh Timing (CL=3, BL=4)

DQS

MRS or

REF

(Output)

RDA

WRA

Q2 Q3

WRA REF

8 Refresh Cycle

REFI

Total time of 8 Refresh cycle

+ t

REFI

is specified to avoid partly concentrated current of Refresh operation that is activated larger area than

Read/Write operation.

Note : In case of CL=3, I

REFC

must be meet 15 clock cycles. When the Auto-Refresh operation is performed,

the synthetic average interval of Auto-Refresh command specified by t

REFI

must be satisfied. t

REFI

average Interval time in 8 Refresh cycles that is sampled randomly.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 35 -

WRA

REF

DESL

m-1

m+1

REFC

FPDL

(min)

Hi-Z

Command

Self-Refresh Entry Timing

DQS

(Output)

RCD

= 1 cycle

FPDL

(max)

QPDH

Hi-Z

CKD

= 16 cycleS

Note : 1. "X" is don't care.
2. PD msut be brought to "Low" within the timing between t

FPDL

(min) and t

FPDL

(max) to Self Refresh mode

When PD is brought to "Low" after I

PDV

, Network-DRAM perform Auto Refresh and enter Power down mode.

3. It is desirable that clock input is continued at least 16 clock cycles from REF command even though
PD is brought to "Low" for Self-Refresh Entry.

DESL

WRA

REF

m-1

m+1

m+2

n-1

n+1

p-1

REFC

PDA

= 1 cycle *4

RCD

= 1 cycle

Hi-Z

Command

Self-Refresh Exit Timing

DQS

(Output)

DESL

Command

(1st)

Command

(2nd)

RDA

LAL

PDEX

IRCD = 1 cycle

Note : 1. "X" is don't care.,
2. Clock should be stable prior to PD = "High" if clock input is suspended in Self-Refresh mode.
3. DESL command must be asserted during I

REFC

after PD is brought to "High".

4. IPDA is defined from the first clock rising edge after PD is brought to "High".
5. It is desirable that one Auto-Refresh command is issued just after Self-Refresh Exit before any other operation.
6. Any command (except Read command) can be issued after I

REFC

7. Read command (RDA+LAL) can be issued after ILOCK.

ILOCK

Self-Refresh Exit

Auto Refresh

Self Refresh Entry

PDV

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 36 -

Function Description

Network-DRAM

The Network-DRAM is Double Data Rate (DDR) operating. The Network-DRAM is competent to perform fast random core access,
low latency, low consumption and high-speed data bandwidth.

Pin Functions

Clock Inputs : CK & CK

The CK and CK inputs are used as the reference for synchronus operation. CK is master clock input. The CS, FN and all address
input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK. The DQS and DQ and DQ output
data are referenced to the crossing point of CK and CK. The timing reference point for the differential clock is when the CK and CK sig-
nals cross during a transition.

Power Down : PD

The PD input controls the entry to the Power Down or Self-Refresh modes. The PD input does not have a Clock Suspend function like
a CKE input of a standard SDRAMs, therefore it is illegal to bring PD pin into low state if any Read or Write operation is being per-
formed.

Chip Select & Function Control : CS & FN

The CS and FN inputs are a control aignal for forming the operation commands on Network-DRAM. Each operation mode is decided
by the combination of the two consecutive operation commands using the CS and FN inputs.

Bank Addresses : BA0 & BA1

The BA0 and BA1 inputs are latched at the time of assertion of the RDA or WRA command and are selected the bank to be used for
the operation.

BA0

BA1

Bank #0

Bank #1

Bank #2

Bank #3

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 37 -

Functional Description (Continued)

Address Inputs : A0 to A14

Address inputs are used to access the arbitrary address of the memory cell array within each bank. The Upper Addresses with Bank
address are latched at the RDA or WRA command and the Lower Addresses are latched at the LAL command. The A0 to A14 inputs
are also used for setting the data in the Regular or Extended Mode Register set cycle.

Data Input/Output : DQ0 to DQ7 or DQ15

The input data of DQ0 to DQ15 are taken in synchronizing with the both edges of DQS input signal.
The output data of DQ0 to DQ15 are outputted synchronizing with the both edges of DQS output signal.

Data Strobe : DQS or LDQS, UDQS

The DQS is bi-directional signal. Both edges of DQS are used as the reference of data input or output. The LDQS is allotted for Lower
Byte (DQ0 to DQ7) Data. The UDQS is allotted for Upper Byte(DQ8 to DQ15) Data. In write operation, the DQS used as an input signal
is utilized for a latch of write data. In read operation, the DQS that is an output signal provides the read data strobe.

Power Supply : Vdd, VddQ, Vss, VssQ

Vdd and Vss are supply pins for memory core and peripheral circuits.
VddQ and VssQ are power supply pins for the output buffer.

Reference Voltage : V

REF

REF

is reference voltage for all input signals.

Upper Address

Lower Address

K4C560838C-TC

A0 to A14

A0 to A7

K4C561638C-TC

A0 to A14

A0 to A6

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 38 -

Functional Description (Continued)

Command Functions and Operations

K4C5608/1638C-TC are introduced the two consccutive command input method. Therefore, except for Power Down mode, each
operation mode decided by the combination of the first command and the second command from stand-by states of the bank to be
accessed.

Read Operation (1st command + 2nd command = RDA + LAL)

Issuing the RDA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address in
a read mode. When the LAL command with Lower Addresses is issued at the next clock of the RDA command, the data is read out
sequentially synchroniaing with the both edges of DQS output signal (Burst Read Operation). The initial valid read data appears after
CAS latency, the burst length of read data and the burst type must be set in the Mode Register beforehand. The read operated bank
goes back automatically to the idle state after I

Write Operation (1st command + 2nd command = WRA + LAL)

Issuing the WRA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address
in a write mode. When the LAL command with Lower Addresses is issued at the next clock of the WRA command, the input data is
latched sequentially synchronizing with the both edges of DQS input signal (Burst Write Operation). The data and DQS inputs have to
be asserted in keeping with clock input after CAS latency-1 from the issuing of the LAL command. The write data length is set by the
VW in the LAL command. The DQS have to be provided for a burst length. The CAS latency and the burst type must be set in the
Mode Register beforehand. The write operated bank goes back automatically to the idle state after I

Auto-Refresh Operation (1st command + 2nd command = WRA + REF)

K4C560838/1638C-TC are required to refresh like a standard SDRAM. The Auto-Refresh operation is begun with the REF command
following to the WRA command. The Auto-Refresh mode can be effective only when all banks are in the idle state and all outputs are
in Hi-z states. In a point to notice, the write mode started with the WRA command is canceled by the REF command having gone into
the next clock of the WRA command instead of the LAL command. The minimum period between the Auto-Refresh command and the
next command is specified by I

REFC

. However, about a synthetic average interval of Auto-Refresh command, it must be careful. In

case of equally distributed refresh, Auto-Refresh command has to be issued within once for every 7.8us by the maximum In case of
burst refresh or random distributed refresh, the average interval of eight consecutive Auto-Refresh command has to be more than
400ns always. In other words, the number of Auto-Refresh cycles which can be performed within 3.2us (8x400ns) is to 8 times in the
maximum.

Self-Refresh Operation (1st command + 2nd command = WRA + REF with PD="L")

It is the function of Self-Refresh operation that refresh operation can be performed automatically by using an internal timer. When all
banks are in the idle state and all outputs are in Hi-z states, the K4C560838/1638C-TC become Self-Refresh mode by issuing the Self-
Refresh command. PD has to be brought to "Low" within t

FPDL

from the REF command following to the WRA command for a Self-

Refresh mode entry. In order to satisfy the refresh period, the Self-Refresh entry command should be asserted within 7.8us after the
latest Auto-Refresh command. Once the device enters Self-Refresh mode, the DESL command must be continued for I

REFC

period. In

addition, it is desirable that clock input is kept in I

CKD

period. The device is in Self-Refresh mode as long as PD held "Low". During

Self-Refresh mode, all input and output buffers except for PD are disabled, therefore the power dissipation lowers. Regarding a Self-
Refresh mode exit, PD has to be changed over from "Low" to "High" along with the DESL command, and the DESL command has to
be continuously issued in the number of clocks specified by I

REFC

. The Self-Refresh exit function is asynchronous operation. It is

required that one Auto-Refresh command is issued to avoid the violence of the refresh period just after I

REFC

from Self-Refresh exit.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 39 -

Power Down Mode( PD="L" )

When all banks are in the idle state and all outputs are in Hi-Z states, the K4C560838/1638C-TC become Power Down Mode by
asserting PD is "Low". When the device enters the Power Down Mode, all input and output buffers except for PD are disabled after
specified time. Therefore, the power dissipation lowers. To exit the Power Down Mode, PD has to be brought to "High" and the DESL
command has to be issued at next CK rising edge after PD goes high. The Power Down exit function is asynchronous operation.

Mode Register Set (1st command + 2nd command = RDA + MRS)

When all banks are in the idle state, issuing the MRS command following to the RDA command can program the Mode Register. In a
point to notice, the read mode started with the RDA command is canceled by the MRS command having gone into the next clock of the
RDA command instead of the LAL command. The data to be set in the Mode Register is transferred using A0 to A14, BA0 and BA1
address inputs. The K4C560838/1638C-TC have two mode registers. These are Regule and Extended Mode Register. The Regular or
Extended Mode Register is chosen by BA0 in the MRS command.The Regular Mode Register designates the operation mode for a
read or write cycle. The Regular Mode Register has four function fields.

The four fields are as follows :
(R-1) Burst Length field to set the length of burst data
(R-2) Burst Type field to designate the lower address access sequence in a burst cycle
(R-3) CAS Latency field to set the access time in clock cycle
(R-4) Test Mode field to use for supplier only.

The Extended Mode Register has two function fields.
The two fields are as follows:
(E-1) DLL Switch field to choose either DLL enable or DLL disable
(E-2) Output Driver Impedance Control field.

Once these fields in the Mode Register are set up, the register contents are maintained until the Mode Register is set up again by
another MRS command or power supply is lost. The initial value of the Regular or Extended Mode Register after power-up is unde-
fined, therefore the Mode Register Set command must be issued before proper operation.

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 40 -

Functional Description (Continued)

· Regular Mode Register/Extended Mode Register change bits (BA0, BA1)

These bits are used to choose either Regular MRS or Extended MRS

Regular Mode Register Fields

(R-1) Burst Length field (A2 to A0)
This field specifies the data length for column access using the A2 to A0 pins and sets the Burst Length to be 2 or 4
words.

(R-2) Burst Type field (A3)
This Burst Type can be chosen Interleave mode or Sequential mode. When the A3 bit is " 0", Sequential mode is
selected. When the A3 bit is "1", Interleave mode is selected. Both burst types support burst length of 2 and 4 words.

· Addressing sequence of Sequential mode (A3)
A column access is started from the inputted lower address and is performed by incrementing the lower address input to

the device. The address is varied by the Burst Length as the following.

BA1

BA0

A14 - A0

Regular MRS cycle

Extended MRS cycle

Reserved

Burst Length

Reserved

2 words

4 words

Reserved

Burst Type

Sequential

Interleave

RDA

LAL

Data 0 Data 1 Data 2 Data 3

Addressing sequence for Sequential mode

Data

Access Address

Burst Length

Data 0

2 words (Address bits is LA0)

not carried from LA0 to LA1

4 words(Address bits is LA1, LA0)

not carried from LA0 to LA1

Data 1

n + 1

Data 2

n + 2

Data 3

n + 3

CAS Latency = 2

CK
CK

Command

DQS

K4C5608/1638C 256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 41 -

Functional Description (Continued)

· Addressing sequence of Inteleave mode
A column access is started from the inputted lower address and is performed by interleaving the address bits in the
sequence shown as the following.

Addressing sequence for Interleave mode

(R-3) CAS Latency field (A6 to A4)
This field specifies the number of clock cycles from the assertion of the LAL command following the RDA command to
the first data read. The minimum values of CAS Latency depends on the frequency of CK. In a write mode, the place of
clock which should input write data is CAS Latency cycles - 1.

(R-4) Test Mode field (A7)

This bit is used to enter Test Mode for supplier only and must be set to "0" for normal operation.

(R-5) Reserved field in the Regular Mode Register
· Reserved bits (A8 to A14)

These bits are reserved for future operations. They must be set to "0" for normal operation.

Data

Access Address

Burst Length

Data 0

...A8 A7 A6 A5 A4 A3 A2 A1 A0

2 words

4 words

Data 1

...A8 A7 A6 A5 A4 A3 A2 A1 A0

Data 2

...A8 A7 A6 A5 A4 A3 A2 A1 A0

Data 3

...A8 A7 A6 A5 A4 A3 A2 A1 A0

CAS Latency

Reserved

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: K4C560838C-TCD4

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: K4C560838C-TCD4